Magnetic storage element, magnetic storage device, electronic device, and method of manufacturing magnetic storage element

Patent metadata

Field	Value
Publication number	US-10964604-B2
Application number	US-201716486555-A
Country	US
Kind code	B2
Filing date	Dec 8, 2017
Priority date	Mar 1, 2017
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

To provide a magnetic storage element, a magnetic storage device, and an electronic device which store multi-value information with a simpler structure. A magnetic storage element provided with a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, in which the plurality of tunnel junction elements has film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, and each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction is a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements.

First claim

The invention claimed is:

1. A magnetic storage element, comprising:
a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, wherein
the plurality of tunnel junction elements has film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, and
each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction is a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements.

2. The magnetic storage element according to claim 1 ,
wherein, in a cross-sectional shape of at least any one of the plurality of tunnel junction elements, a ratio of a lower side to an upper side of the storage layer is one or larger.

3. The magnetic storage element according to claim 1 ,
wherein, in a cross-sectional shape of at least any one of the plurality of tunnel junction elements, a ratio of a lower side to an upper side of the storage layer is smaller than one.

4. The magnetic storage element according to claim 1 ,
wherein the plurality of tunnel junction elements has polygonal cross-sectional shapes with different numbers of apexes.

5. The magnetic storage element according to claim 1 ,
wherein at least cross-sectional shapes of storage layers are different from each other among the cross-sectional shapes of the plurality of tunnel junction elements.

6. The magnetic storage element according to claim 1 ,
wherein the storage layer reverses the magnetization direction on a basis of a direction of current flowing through a tunnel junction element of the plurality of tunnel junction elements.

7. The magnetic storage element according to claim 6 ,
wherein voltages for reversing the magnetization direction of the storage layer are different from each other among the plurality of tunnel junction elements.

8. A magnetic storage device in which a plurality of magnetic storage elements is arranged in an array, each of the magnetic storage elements including: a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, wherein the plurality of tunnel junction elements has film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, and each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction is a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements.

9. An electronic device, comprising:
a magnetic storage unit in which a plurality of magnetic storage elements is arranged in an array, each of the magnetic storage elements provided with a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, the plurality of tunnel junction elements having film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction being a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements; and
an arithmetic processing unit which executes information processing on a basis of information stored in the magnetic storage unit.

10. A method of manufacturing a magnetic storage element, comprising:
a step of forming a laminate including a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer;
a step of forming a plurality of tunnel junction elements by dividing the laminate by etching;
a step of changing a shape of at least the storage layer of a tunnel junction element which is etched by etching at least any one of the plurality of tunnel junction elements; and
a step of electrically connecting the plurality of tunnel junction elements in parallel.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Uchida Hiroyuki
• Hosomi Masanori
• Ohmori Hiroyuki
• Bessho Kazuhiro
• Higo Yutaka
• Sato Yo
• Hase Naoki

Classifications

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/5607

  using magnetic storage elements · CPC title

• H01L27/222

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic