Treatment liquid and pattern forming method

Patent metadata

Field	Value
Publication number	US-10962884-B2
Application number	US-201815937876-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Sep 30, 2015
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.

First claim

What is claimed is:

1. A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and
containing an organic solvent,
wherein the treatment liquid contains a first organic solvent having an solubility parameter value of 16.3 MPa 1/2 or less and a second organic solvent having an solubility parameter value of 17.1 MPa 1/2 or more, wherein the first organic solvent includes undecane, and an amount of the first organic solvent is 40% or less by weight with respect to a total weight of the treatment liquid, and
the treatment liquid is a rinsing liquid.

2. The treatment liquid according to claim 1 ,
wherein the second organic solvent includes a ketone-based solvent.

3. The treatment liquid according to claim 2 ,
wherein the ketone-based solvent includes an acyclic ketone.

4. A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and
containing an organic solvent and an ionic liquid,
wherein the treatment liquid contains a first organic solvent having an solubility parameter value of 16.3 MPa 1/2 or less and a second organic solvent having an solubility parameter value of 17.1 MPa 1/2 or more, wherein the first organic solvent includes undecane, and an amount of the first organic solvent is 40% or less by weight with respect to a total weight of the treatment liquid.

5. A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition;
an exposing step of exposing the resist film; and
a treating step of treating the exposed resist film with the treatment liquid according to claim 1 .

6. A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition;
an exposing step of exposing the resist film; and
a treating step of treating the exposed resist film with the treatment liquid according to claim 1 ,
wherein the treating step includes:
a developing step of carrying out development with a developer; and
a rinsing step of carrying out washing with a rinsing liquid, and
the rinsing liquid is the treatment liquid.

7. The pattern forming method according to claim 6 ,
wherein the developer includes an ester-based solvent.

8. The pattern forming method according to claim 7 ,
wherein the ester-based solvent is a solvent including at least one selected from the group consisting of butyl acetate, amyl acetate, isoamyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, pentyl propionate, hexyl propionate, heptyl propionate, butyl butanoate, and butyl isobutanoate.

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru
• Yamamoto Kei

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• G03F7/0043 Primary

  Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence) · CPC title

• G03F7/0758

  with silicon- containing groups in the side chains · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/095

  having more than one photosensitive layer (G03F7/075 takes precedence) · CPC title