Thin film wafer transfer and structure for electronic devices

Patent metadata

Field	Value
Publication number	US-10957816-B2
Application number	US-201313759711-A
Country	US
Kind code	B2
Filing date	Feb 5, 2013
Priority date	Feb 5, 2013
Publication date	Mar 23, 2021
Grant date	Mar 23, 2021

Abstract

An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

First claim

What is claimed is:

1. An LED electronic device, comprising:
a spreading layer including 2 monolayers of graphene;
a first contact layer of silicon carbide being p-type doped and having a monolayer thickness formed over and directly contacting a first surface of the spreading layer;
a blocking layer comprising at least aluminum, gallium, indium and nitrogen directly on the first contact layer;
an multiple quantum well (MQW) structure present on the first contact layer, wherein the first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of the multiple quantum well (MQW) structure, the multiple quantum well having a plurality of a repeating unit of a first gallium nitride layer, an indium gallium nitride layer and a second gallium nitride layer, an initial repeating unit for the plurality of the repeating unit beginning with an initial first gallium nitride layer in direct contact with the blocking layer; and
a second contact layer of gallium nitride being n-type doped formed in direct contact with the second gallium nitride layer of a final repeating unit for the plurality of the repeating unit in the multiple quantum well (MQW) structure, wherein the multiple quantum well (MQW) structure is disposed vertically between the first and second contact layers to form a vertical thin film stack of the spreading layer, the first contact layer, the blocking layer, multiple quantum well (MQW) and the second contact layer that is free of light absorbing substrates selected from the group consisting of silicon, sapphire and a combination thereof in the LED electronic device, wherein a junction temperature of the LED is less than 75° C.

2. The LED electronic device as recited in claim 1 , wherein the MQW has a total thickness of less than about 100 nm.

3. The LED electronic device as recited in claim 1 , wherein the SiC includes a thickness of between about 0.3 nm and about 300 nm.

4. The LED electronic device as recited in claim 1 , wherein the first contact layer and the second contact layer are separated by a distance of 100 nm or less.

5. The LED electronic device of claim 1 , wherein the second contact has a lesser width than the first contact.

6. An LED electronic device, comprising,
a two-dimension material spreading layer of graphene and having a thickness of two monolayers;
a first contact layer directly on a first surface of the spreading layer and being formed from SiC crystalline material;
a multiple quantum well (MQW) structure, the multiple quantum well structure having a plurality of a repeating unit of a first gallium nitride layer, an indium gallium nitride layer and a second gallium nitride layer, an initial repeating unit for the plurality of the repeating unit beginning with an initial first gallium nitride layer in direct contact with the first contact layer the multiple quantum well structure having a total thickness of less than about 100 nm;
a second contact layer of a p-type gallium nitride formed in direct contact with the second gallium nitride layer of a final repeating unit for the plurality of the repeating unit in the multiple quantum well structure, wherein the multiple quantum well structure is disposed vertically between the first and second contact layers to form a vertical light emitting diode (LED) that is free of light absorbing substrates comprised of silicon, sapphire or a combination thereof in the LED electronic device, wherein a junction temperature of the LED is less than 75° C.

7. The LED electronic device as recited in claim 6 , wherein the SiC crystalline material includes a thickness of between about 0.3 nm and about 300 nm.

8. The LED electronic device as recited in claim 6 , wherein the first contact layer and the second contact layer are separated by a distance of 100 nm or less.

9. The LED electronic device of claim 6 , wherein the second contact has a lesser width than the first contact.

Assignees

• IBM

Inventors

• Bayram Can
• Chu Jack O
• Dimitrakopoulos Christos
• Kim Jeehwan
• Park Hongsik
• Sadana Devendra K

Classifications

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/816 Primary

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title