Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Patent metadata

Field	Value
Publication number	US-10957767-B2
Application number	US-202016773225-A
Country	US
Kind code	B2
Filing date	Jan 27, 2020
Priority date	Aug 26, 2015
Publication date	Mar 23, 2021
Grant date	Mar 23, 2021

Abstract

A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×1013 cm−3 to 1×1015 cm−3; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.

First claim

What is claimed is:

1. A method of manufacturing, the method comprising:
forming hydrogen related donors in a silicon wafer by irradiating the silicon wafer with protons, the silicon wafer having been manufactured by a method including the steps of:
extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants;
adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating the n-type dopants in the n-type silicon ingot by 10% to 80%; and
slicing the n-type silicon ingot to form the silicon wafer; and

annealing the silicon wafer after forming of the hydrogen related donors.

2. A method of manufacturing, the method comprising:
providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, wherein a net n-type doping concentration of the n-type silicon wafer is in a range from 1×10 13 cm −3 to 1×10 15 cm −3 ;
forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and
annealing the n-type silicon wafer after forming the hydrogen related donors.

3. A method of manufacturing, the method comprising:
forming hydrogen related donors in an n-type silicon wafer by irradiating the n-type silicon wafer with protons; and
annealing the n-type silicon wafer after forming the hydrogen related donors, the annealed n-type silicon wafer including a drift zone having a field stop region, the drift zone having n-type dopants wherein a 5% to 75% portion of the n-type dopants is made up of the hydrogen related donors.

4. The method of claim 3 , wherein a 5% to 50% portion of the n-type dopants of the drift zone having the field stop region is made up of the hydrogen related donors.

5. The method of claim 3 , wherein another portion of the n-type dopants of the drift zone having the field stop region is made up of phosphorus.

6. The method of claim 3 , wherein:
irradiating the n-type silicon wafer with protons includes an implantation dose in a range of 1×10 13 cm −2 and 8×10 14 cm −2 with an implantation energy in a range of 1.0 MeV and 5.0 MeV, and
annealing the n-type silicon wafer includes an annealing temperature in a range of 460° C. and 520° C., and an annealing duration in a range of 30 minutes and 20 hours.

7. The method of claim 3 , further comprising:
measuring an electric characteristic or a material characteristic of the n-type silicon wafer, and setting at least one parameter of the proton irradiation and the annealing of the n-type silicon wafer as a function of the measured electric or the material characteristic.

8. A method of manufacturing, the method comprising:
forming hydrogen related donors in an n-type silicon wafer by irradiating the n-type silicon wafer with protons, wherein the n-type silicon wafer includes n-type dopants partially compensated 20% to 80% by p-type dopants and has a net n-type doping concentration in a range from 1×10 13 cm −3 to 1×10 15 cm −3 ; and
annealing the silicon wafer after forming the hydrogen related donors.

Assignees

• Infineon Technologies Ag

Inventors

• Caspary Nico
• Oefner Helmut
• Schulze Hans-Joachim

Classifications

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title

• H10D62/834

  further characterised by the dopants · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D12/441

  Vertical IGBTs · CPC title