Semiconductor apparatus

Patent metadata

Field	Value
Publication number	US-10957619-B2
Application number	US-201916288104-A
Country	US
Kind code	B2
Filing date	Feb 28, 2019
Priority date	Apr 2, 2018
Publication date	Mar 23, 2021
Grant date	Mar 23, 2021

Abstract

A semiconductor apparatus is provided, including: a housing; a heat-dissipation substrate; a first semiconductor chip provided on the heat-dissipation substrate; a temperature detecting unit provided on the housing; a first thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit; and a second thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit, the second thermoelectric member being made of a different material than the first thermoelectric member. The thermal conductivity of the heat-dissipation substrate is higher than the thermal conductivity of the housing.

First claim

What is claimed is:

1. A semiconductor apparatus comprising:
a housing;
a heat-dissipation substrate;
a first semiconductor chip provided on the heat-dissipation substrate;
a temperature detecting unit provided on the housing;
a first thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit; and
a second thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit, the second thermoelectric member being made of a different material than the first thermoelectric member,
wherein a thermal conductivity of the heat-dissipation substrate is higher than a thermal conductivity of the housing.

2. The semiconductor apparatus according to claim 1 , wherein the first semiconductor chip comprises a first electrically-conductive pad to which the first thermoelectric member and the second thermoelectric member are connected.

3. The semiconductor apparatus according to claim 1 , wherein the temperature detecting unit comprises a temperature detecting element, and detects a temperature of the first semiconductor chip based on a temperature difference between a temperature of the temperature detecting unit and the temperature of the first semiconductor chip.

4. The semiconductor apparatus according to claim 1 , wherein the temperature detecting unit comprises a second electrically-conductive pad connected to the first thermoelectric member and the second thermoelectric member.

5. The semiconductor apparatus according to claim 1 , wherein a material having a lower thermal conductivity than the heat-dissipation substrate is provided between the first semiconductor chip and the temperature detecting unit.

6. The semiconductor apparatus according to claim 1 , wherein the housing has an upper surface in a different plane than an upper surface of the heat-dissipation substrate.

7. The semiconductor apparatus according to claim 1 , further comprising:
a first lead frame provided between the first semiconductor chip and the heat- dissipation substrate; and
a second lead frame provided between the temperature detecting unit and the housing,
wherein a material having a lower thermal conductivity than the heat-dissipation substrate is provided between the first lead frame and the second lead frame.

8. The semiconductor apparatus according to claim 1 , wherein the first thermoelectric member contains at least one of copper and a nickel-chromium alloy.

9. The semiconductor apparatus according to claim 1 , wherein the second thermoelectric member contains at least one of a copper-nickel alloy and a nickel alloy.

10. The semiconductor apparatus according to claim 2 , wherein:
the first semiconductor chip comprises a diode section and a transistor section; and
the first electrically-conductive pad is provided in the diode section.

11. The semiconductor apparatus according to claim 10 , wherein:
the transistor section comprises an emitter electrode; and
the first electrically-conductive pad and the emitter electrode are formed of a same material.

12. The semiconductor apparatus according to claim 10 , wherein:
the first semiconductor chip comprises an emitter electrode provided across the diode section and the transistor section; and
the first electrically-conductive pad is provided above the emitter electrode in the diode section.

13. The semiconductor apparatus according to claim 2 , further comprising a second semiconductor chip comprising a diode section, wherein:
the first semiconductor chip comprises a transistor section; and
the first electrically-conductive pad is provided in the transistor section.

14. The semiconductor apparatus according to claim 1 , wherein
the first thermoelectric member directly connects the first semiconductor chip and the temperature detecting unit, and
the second thermoelectric member directly connects the first semiconductor chip and the temperature detecting unit.

15. The semiconductor apparatus according to claim 3 , wherein the temperature detecting unit detects the temperature of the first semiconductor chip based on a sum of a temperature of the temperature detecting unit and the temperature difference between the temperature of the temperature detecting unit and the temperature of the first semiconductor chip.

16. The semiconductor apparatus according to claim 15 , wherein the temperature detecting unit detects the temperature difference between the temperature of the temperature detecting unit and the temperature of the first semiconductor chip based on the potential difference between the first thermoelectric member and the second thermoelectric member.

Assignees

• Fuji Electric Co Ltd

Inventors

• Higashi Nobuhiro

Classifications

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W76/136

  having other interconnections perpendicular to the conductive base · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/465

  Bumps or wires · CPC title

• H10W70/461

  specially adapted for cooling · CPC title