Method for producing a plurality of optoelectronic components, and optoelectronic component

Patent metadata

Field	Value
Publication number	US-10950746-B2
Application number	US-201816484553-A
Country	US
Kind code	B2
Filing date	Feb 2, 2018
Priority date	Feb 15, 2017
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A method for producing a plurality of optoelectronic components are disclosed. In an embodiment, the method includes providing a substrate, epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm and comprises AlxGa(1-x)As with 0<x≤1, epitaxially applying a semiconductor layer sequence on the sacrificial layer, forming trenches extending in a vertical direction through the semiconductor layer sequence to the sacrificial layer such that a plurality of regions in the semiconductor layer sequence is formed and wet thermally oxidizing the sacrificial layer such that the substrate is non-destructively removable from the semiconductor layer sequence, wherein the sacrificial layer comprises at least three and optionally four sublayers in a direction facing away from the substrate, a first sublayer comprising InGaAlP, a second sublayer comprising GaAs, a third sublayer comprising AlxGa(1-x)As with 0<x≤1 and a fourth sublayer comprising GaAs.

First claim

The invention claimed is:

1. A method of producing a plurality of optoelectronic components, the method comprising:
providing a substrate;
epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm, and wherein the sacrificial layer comprises Al x Ga (1-x) As with 0<x≤1;
epitaxially applying a semiconductor layer sequence on the sacrificial layer;
forming trenches extending in a vertical direction through the semiconductor layer sequence to the sacrificial layer such that a plurality of regions in the semiconductor layer sequence is formed; and
wet thermally oxidizing the sacrificial layer such that the substrate is non-destructively removable from the semiconductor layer sequence,
wherein the sacrificial layer comprises at least three and optionally four sublayers in a direction facing away from the substrate, a first sublayer comprising InGaAlP, a second sublayer comprising GaAs, a third sublayer comprising Al x Ga (1-x) As with 0<x≤1 and a fourth sublayer comprising GaAs.

2. The method according to claim 1 , further comprising applying an auxiliary carrier to a side of the semiconductor layer sequence opposite the substrate after forming trenches and after wet thermally oxidizing.

3. The method according to claim 2 , wherein the auxiliary carrier is a germanium carrier, a sapphire carrier, a plastic carrier or a silicon carrier.

4. The method according to claim 2 , further comprising:
removing the auxiliary carrier and the semiconductor layer sequence from the substrate; and
subsequently separating at least the auxiliary carrier so that the plurality of optoelectronic components is obtained.

5. The method according to claim 1 , wherein wet thermally oxidizing is carried out at a temperature of less than 400° C. under a steam atmosphere.

6. The method according to claim 1 , wherein wet thermally oxidizing comprises only partially oxidizing the sacrificial layer such that there are non-oxidized regions between the semiconductor layer sequence and the substrate comprises Al x Ga (1-x) As with x≤1.

7. The method according to claim 1 ,
wherein the first sublayer serves as a protective layer for the substrate and has a layer thickness of 1 nm to 350 nm,
wherein the second sublayer has a layer thickness of 1 nm to 500 nm, and
wherein the fourth sublayer serves as a protective layer for the semiconductor layer sequence and has a layer thickness of 1 nm to 120 nm.

8. The method according to claim 1 , wherein 0.95≤x<1, and wherein the layer thickness of the sacrificial layer is between 600 nm and 800 nm, inclusive.

9. The method according to claim 1 , wherein x=0.98.

10. The method according to claim 1 , wherein the semiconductor layer sequence is a thin film chip.

11. The method according to claim 1 , wherein the substrate is GaAs.

12. The method according to claim 1 , wherein the sacrificial layer completely oxidizes and an adhesion of the oxidized sacrificial layer is less than an adhesion of the non-oxidized sacrificial layer.

13. An optoelectronic component produced according to the method of claim 1 .

14. A method of producing a plurality of optoelectronic components, the method comprising:
providing a substrate;
epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm, and wherein the sacrificial layer comprises Al x Ga (1-x) As with 0<x≤1;
epitaxially applying a semiconductor layer sequence on the sacrificial layer;
forming trenches extending in a vertical direction through the semiconductor layer sequence to the sacrificial layer such that a plurality of regions in the semiconductor layer sequence is formed; and
wet thermally oxidizing the sacrificial layer such that the substrate is non-destructively removable from the semiconductor layer sequence,
wherein the sacrificial layer comprises at least three and optionally four sublayers in a direction facing away from the substrate, a first sublayer comprising InGaAlP, a second sublayer comprising GaAs, a third sublayer comprising Al x Ga (1-x) As with 0<x≤1 and a fourth sublayer comprising GaAs, and
wherein the first sublayer is arranged on the substrate followed by the second sublayer, the third sublayer and the fourth sublayer in the direction facing away from the substrate.

15. The method according to claim 14 , further comprising:
applying an auxiliary carrier to a side of the semiconductor layer sequence opposite the substrate after forming trenches and after wet thermally oxidizing;
removing the auxiliary carrier and the semiconductor layer sequence from the substrate; and
subsequently separating at least the auxiliary carrier so that the plurality of optoelectronic components is obtained.

16. The method according to claim 14 , wherein wet thermally oxidizing is carried out at a temperature of less than 400° C. under a steam atmosphere.

17. The method according to claim 14 , wherein 0.95≤x<1, and wherein the layer thickness of the sacrificial layer is between 600 nm and 800 nm, inclusive.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Englhard Marco

Classifications

• H10H20/036

  of packages · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/0133 Primary

  with a substrate not being Group III-V materials · CPC title