Method for producing an optoelectronic semiconductor chip

Patent metadata

Field	Value
Publication number	US-9799801-B2
Application number	US-201414891658-A
Country	US
Kind code	B2
Filing date	May 14, 2014
Priority date	May 16, 2013
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

First claim

The invention claimed is:

1. A method for producing an optoelectronic semiconductor chip having the following steps in the stated order:
providing a substrate;
depositing a buffer layer;
depositing a sacrificial layer;
depositing a functional semiconductor layer sequence, wherein the functional semiconductor layer sequence forms a light-emitting diode structure;
laterally patterning the functional semiconductor layer sequence so that a grid-like system of trenches is formed, the trenches extend through the semiconductor layer sequence in the opposite direction to a growth direction from a top of the functional semiconductor layer sequence remote from the substrate, the trenches split the functional semiconductor layer sequence and the sacrificial layer and end in the buffer layer, which acts as an etch stop layer, while not patterning the substrate;
oxidizing the sacrificial layer in a wet thermal oxidation process; and
separating the functional semiconductor layer sequence from the substrate, wherein the substrate remains as a contiguous uninterrupted layer.

2. The method according to claim 1 , wherein the substrate comprises GaAs,
wherein the sacrificial layer comprises Al x Ga 1x As,
wherein 0.8 <×<1 and
wherein AlO x H y is formed during oxidation of the sacrificial layer.

3. The method according to claim 1 , wherein the sacrificial layer comprises AlAs.

4. The method according to claim 1 , wherein the sacrificial layer comprises Al x Ga 1-x As, and
wherein 0.8 <×<1.

5. The method according to claim 1 , wherein AlO x H y is formed during oxidation of the sacrificial layer.

6. The method according to claim 1 , wherein separating the functional semiconductor layer sequence from the substrate comprises removal by means of an etching solution of an oxide formed during oxidation of the sacrificial layer.

7. The method according to claim 1 , wherein an etching solution is used which comprises hydrofluoric acid.

8. The method according to claim 1 , wherein a shear force is exerted on the functional semiconductor layer sequence during separating the functional semiconductor layer sequence from the substrate.

9. The method according to claim 1 , wherein the substrate is reused.

10. The method according to claim 1 , wherein the following further step is carried out:
bonding of the functional semiconductor layer sequence to a carrier.

11. The method according to claim 10 , wherein the bonding of the functional semiconductor layer sequence to the carrier takes place prior to oxidation of the sacrificial layer.

12. The method according to claim 10 , wherein the bonding of the functional semiconductor layer sequence to the carrier takes place after oxidation of the sacrificial layer.

13. The method according to claim 10 , wherein the carrier comprises silicon or germanium.

14. The method according to claim 1 , wherein the substrate comprises GaAs.

15. A method for producing an optoelectronic semiconductor chip having the following steps:
providing a single substrate;
depositing a buffer layer;
depositing a sacrificial layer;
depositing a functional semiconductor layer sequence;
laterally patterning the functional semiconductor layer sequence so that a grid-like system of trenches is formed, the trenches extend through the semiconductor layer sequence in the opposite direction to a growth direction from a top of the functional semiconductor layer sequence remote from the substrate, the trenches split the functional semiconductor layer sequence and the sacrificial layer and end in the buffer layer, which acts as an etch stop layer, while not patterning the substrate;
providing a carrier on the functional semiconductor layer sequence on a side remote from the substrate; and
oxidizing the sacrificial layer in a wet thermal oxidation process,
wherein the substrate comprises GaAs,
wherein the sacrificial layer comprises Al x Ga 1-x As,
wherein 0.8 <×<1
wherein porous AlO x H y is formed during oxidation of the sacrificial layer, and
wherein during detachment of the functional semiconductor layer sequence from the single substrate, a shear force is exerted on the functional semiconductor layer sequence.

16. The method according to claim 15 , wherein the steps of providing step, depositing the sacrificial layer, depositing the functional semiconductor layer sequence, laterally patterning and oxidizing are performed in that order.

17. A method for producing an optoelectronic semiconductor chip having the following steps:
providing a GaAs substrate;
depositing a sacrificial layer comprising Al x Ga 1-x As, wherein 0.8 <×<1;
depositing a functional semiconductor layer sequence which is a light-emitting diode structure;
laterally patterning the functional semiconductor layer sequence;
oxidizing the sacrificial layer in a wet thermal oxidation process so that porous AlO x H y is formed during oxidation of the sacrificial layer so that an oxidized sacrificial layer is yielded, the oxidized sacrificial layer is subsequently removed by means of an etching solution; and
separating the functional semiconductor layer sequence from the substrate, wherein the substrate is reused.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Schmid Christian
• Grosser Julia
• Floeter Richard
• Broell Markus

Classifications

• H01L2933/0025

  Electricity · mapped topic

• H01L33/44 Primary

  Electricity · mapped topic

• H01L33/0079

  Electricity · mapped topic

• H01L2933/0033

  Electricity · mapped topic

• H01L33/24

  Electricity · mapped topic