Quantum dots and production method thereof

Patent metadata

Field	Value
Publication number	US-10950427-B2
Application number	US-201916441574-A
Country	US
Kind code	B2
Filing date	Jun 14, 2019
Priority date	Jun 14, 2018
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:
supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

First claim

What is claimed is:

1. A production method of a quantum dot comprising a Group IIIA-VA compound, which comprises:
supplying a Group VA element precursor comprising a halide of a Group VA element and a first ligand comprising a phosphine compound or a first amine compound; and
performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium comprising a second amine compound.

2. The method of claim 1 , wherein the halide of the Group VA element comprises a chloride, a bromide, an iodide, or a combination thereof.

3. The method of claim 1 , wherein the halide of the Group VA element comprises PCl 3 , SbCl 3 , AsCl 3 , BiCl 3 , PBr 3 , SbBr 3 , AsBr 3 , BiBr 3 , PI 3 , SbI 3 , AsI 3 , BiI 3 , or a combination thereof.

4. The method of claim 1 , wherein the phosphine compound comprises a C1 to C40 aliphatic hydrocarbon, a C6 to C40 aromatic hydrocarbon, or a combination thereof, which is linked to a phosphorous atom.

5. The method of claim 1 , wherein the phosphine compound comprises R 3 PO, R 2 HPO, RH 2 PO, R 3 P, R 2 PH, RPH 2 , RPO(OH) 2 , RHPOOH, RHPOOH, R 2 POOH, or a combination thereof, wherein each R is independently a substituted or unsubstituted C5 to C40 aliphatic hydrocarbon, a substituted or unsubstituted C6 to C40 aromatic hydrocarbon, or a combination thereof.

6. The method of claim 1 , wherein the first amine compound and the second amine compound are the same or different and the first amine compound, the second amine compound, or a combination thereof comprises a C1 to C40 aliphatic hydrocarbon, a C6 to C40 aromatic hydrocarbon, or a combination thereof.

7. The method of claim 1 , wherein the first amine compound, the second amine compound, or a combination thereof comprises RNH 2 , R 2 NH, or a combination thereof, wherein each R is independently a substituted or unsubstituted C5 to C40 aliphatic hydrocarbon, a substituted or unsubstituted C6 to C40 aromatic hydrocarbon, or a combination thereof.

8. The method of claim 1 , wherein each of the first amine compound and the second amine compound does not comprise a tertiary amine.

9. The method of claim 1 , further comprising preparing the Group VA element precursor by dissolving the halide of the Group VA element in the first ligand optionally at a temperature of greater than or equal to about 30° C. to prepare a solution.

10. The method of claim 1 , further comprising preparing the Group VA element precursor by adding a non-solvent to the prepared solution to obtain a solid compound comprising the Group VA element precursor.

11. The method of claim 1 , wherein the Group VA element precursor has a form of a transparent liquid at a temperature of greater than or equal to about 60° C.

12. The method of claim 1 , wherein the Group VA element precursor is a solid at room temperature.

13. The method of claim 1 , wherein the Group IIIA metal precursor comprises
indium, gallium, aluminum, or a combination thereof; and
an amine group, a halide moiety, or a combination thereof.

14. The method of claim 1 , wherein the Group IIIA metal precursor comprises indium chloride, indium iodide, indium bromide, gallium chloride, gallium iodide, gallium bromide, aluminum chloride, aluminum iodide, aluminum bromide, or a combination thereof.

15. The method of claim 1 , wherein the method further comprises dissolving the IIIA metal precursor in the second amine compound to obtain a solution, and degassing the solution at a temperature of at least about 100° C. prior to conducting the reaction.

16. The method of claim 1 , wherein the reducing agent comprises a hydride reducing agent.

17. The method of claim 1 , wherein the reaction is carried out at a temperature of greater than or equal to about 200° C.

18. The method of claim 1 , wherein the reaction is performed in the absence of a phosphine compound.

Assignees

• Samsung Electronics Co Ltd
• Univ Pennsylvania

Inventors

• Kim Tae Gon
• Oh Nuri
• Zhao Tianshuo
• Kagan Cherie
• Jang Eun Joo
• Murray Christopher

Classifications

• H10P14/668 Primary

  the materials being characterised by the deposition precursor materials · CPC title

• H10D62/814

  Quantum box structures · CPC title

• H10D48/383

  Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects · CPC title

• H10D30/43

  having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels · CPC title

• H10D30/014

  of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors · CPC title