Method for frequency trimming a microelectromechanical resonator

Patent metadata

Field	Value
Publication number	US-10947111-B2
Application number	US-201815875943-A
Country	US
Kind code	B2
Filing date	Jan 19, 2018
Priority date	Jan 19, 2017
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

First claim

We claim:

1. A method of selective alloying comprising:
locally heating a first portion of a first composition to a diffusion temperature sufficient to diffuse at least a portion of the locally heated first portion of the first composition into a second composition;
wherein a second portion of the first composition remains undiffused into the second composition;
wherein the localized heating of the first portion of the first composition does not raise the temperature of the second portion of the first composition to the diffusion temperature;
wherein the first composition and the second composition comprise a microelectromechanical resonator;
wherein the first composition is a loading element layered on a surface of the second composition comprising a substrate; and
wherein the locally heating uses an optical energy source.

2. The method of claim 1 , wherein the loading element comprise at least one of germanium, gold, aluminum, silver, lead, platinum, iron, copper, aluminum oxide, silicon, or nickel; and
wherein the substrate comprises at least one of silicon, sapphire, aluminum nitride, diamond, silicon nitride, or silicon carbide.

3. The method of claim 1 further comprising cooling the diffused portion of the loading element and substrate;
wherein the loading element is selected based on strain energy measured within the diffused portion of the loading element and substrate.

4. The method of claim 1 , wherein the loading element comprises germanium;
wherein the substrate comprises silicon; and
wherein the diffusion temperature is between 900 and 1000 Centigrade.

5. The method of claim 1 , wherein the optical energy source comprises an ultra-violet laser; and
wherein locally heating comprises emitting, by the ultra-violet laser, ultra-violet light onto the loading element.

6. A method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and two or more loading elements layered on one or more surfaces of the substrate and physically separated one from the other, the method comprising:
selecting a first loading element of the two or more loading elements for frequency trimming;
locally heating the first loading element to a predetermined temperature sufficient to diffuse at least a portion of the first loading element into the substrate to form a composition layer; and
cooling the composition layer to bond the diffused portion of the first loading element and the substrate;
wherein the localized heating of the first loading element does not raise the temperature of a second loading element of the two or more loading elements to the predetermined temperature and the second loading element remains undiffused into the substrate.

7. The method of claim 6 , wherein the resonator is disposed on a wafer and trimming is performed at the wafer level.

8. The method of claim 6 , wherein the first loading element comprises germanium;
wherein the substrate comprises silicon; and
wherein the predetermined temperature is between 900 and 1000 Centigrade.

9. The method of claim 6 , wherein the locally heating uses an optical energy source;
wherein the resonator is fabricated on a wafer and comprises a packaging layer that is transparent to the optical energy source; and
wherein the frequency trimming is performed post-packaging.

10. A method of shifting a resonator frequency from a first resonance frequency to a second resonance frequency, the resonator comprising a first composition and a second composition, the method comprising:
locally heating a first portion of the first composition to a diffusion temperature sufficient to diffuse at least a portion of the locally heated first portion of the first composition into the second composition;
wherein prior to the step of locally heating, the resonator has the first resonance frequency; and
wherein subsequent the step of locally heating, the resonator has the second resonance frequency.

11. The method of claim 10 further comprising cooling the diffused portion of the first composition and the second composition to form a third composition comprising a mixture of the first composition and the second composition;
wherein the first composition comprises a loading element;
wherein the second composition comprises a substrate;
wherein the first portion and a second portion of the loading element are physically separated one from other;
wherein locally heating comprises locally heating with laser light the first portion of the loading element; and
wherein the localized heating of the first portion of the loading element does not raise the temperature of the second portion of the loading element to the diffusion temperature.

12. The method of claim 11 , wherein the loading element comprises at least one of germanium, gold, aluminum, silver, lead, platinum, iron, copper, aluminum oxide, silicon, or nickel; and
wherein the substrate comprises at least one of silicon, sapphire, aluminum nitride, diamond, silicon nitride, or silicon carbide.

13. The method of claim 11 , wherein the resonator is selected from the group consisting of a silicon bulk acoustic resonator, a film bulk acoustic wave resonator, a high-Q single-crystal resonator, a microelectromechanical resonator, and a Coriolis gyroscope.

14. The method of claim 11 , wherein the first composition comprises germanium;
wherein the substrate comprises silicon;
wherein the third composition comprises a eutectic; and
wherein the diffusion temperature is between 900 and 1000 Centigrade.

15. The method of claim 11 , wherein the laser light comprises ultra-violet light emitted by an ultra-violet laser at a predetermined wavelength chosen based on absorption characteristics of the locally heated portion of the first portion of the loading element.

16. The method of claim 11 , wherein applying laser light comprises emitting light onto a region of interest at a predetermined wavelength of between 10 and 1100 nm based on absorption characteristics of the locally heated portion of the first portion of the loading element.

17. The method of claim 10 , wherein the locally heating uses an optical energy source; and
wherein the resonator is fabricated on a wafer and comprises a packaging layer that is transparent to the optical energy source.

Assignees

• Georgia Tech Res Inst

Inventors

• Hamelin Benoit
• Ayazi Farrokh

Classifications

• B23K26/0006 Primary

  taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence) · CPC title

• B81C2201/0166

  by ion implantation · CPC title

• H03H3/013

  for obtaining desired frequency or temperature coefficient ({H03H3/0076} H03H3/04, H03H3/10 take precedence) · CPC title

• B23K26/351

  for trimming or tuning of electrical components · CPC title

• B81C2201/0169

  by post-annealing · CPC title