Ceramic dielectric and method of manufacturing the same and ceramic electronic component and electronic device

Patent metadata

Field	Value
Publication number	US-10943733-B2
Application number	US-201916297883-A
Country	US
Kind code	B2
Filing date	Mar 11, 2019
Priority date	Mar 9, 2018
Publication date	Mar 9, 2021
Grant date	Mar 9, 2021

Abstract

A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.

First claim

What is claimed is:

1. A ceramic dielectric, comprising
a bulk dielectric in the form of a grain with a three-dimensional structure, and comprising barium and titanium;
a ceramic nanosheet; and
a composite dielectric of the bulk dielectric and the ceramic nanosheet.

2. The ceramic dielectric of claim 1 , wherein a phase of the composite dielectric is different from a phase of the bulk dielectric and a phase of the ceramic nanosheet.

3. The ceramic dielectric of claim 1 , wherein the composite dielectric comprises a plurality of phases.

4. The ceramic dielectric of claim 1 , wherein a phase of the ceramic nanosheet is represented by at least one of Chemical Formulae 1 to 3:
X m [A (n−1) M n O (3n+1) ],  Chemical Formula 1

X r [A p M (p−1) O 3p ], and  Chemical Formula 2

X r [M p O (2p+1) ],  Chemical Formula 3

wherein, in Chemical Formulae 1 to 3, X, A, and M are each independently, and
X is at least one of H, an alkali metal, a cation, and a cationic compound,
A is at least one of Ca, Na, Ta, Bi, Ba, and Sr,
M is different from A and at least one of W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, and Ti,
0≤m≤2, 0≤r≤2, n≥1, and p≥1.

5. The ceramic dielectric of claim 1 , wherein the phase of the composite dielectric is represented by Chemical Formula 4:
Ba a Ti b A c M d Q e O f   Chemical Formula 4

wherein, in Chemical Formula 4,
A is at least one of Ca, Na, Ta, Bi, Ba, and Sr,
M is different from A and at least one of W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, and Ti,
Q is at least one of Si, Mn, Al, Fe, Zn, Ga, Dy, and In,
0<a≤4, 0<b≤4, 0≤c≤8, 0<d≤8, 0≤e≤0.5 and 0<f≤30.

6. The ceramic dielectric of claim 1 , wherein the ceramic nanosheet has an exfoliated structure of a dielectric of an Aurivilius phase, a Ruddlesden-Popper phase, a Dion-Jacobson phase, or a Titano-Niobate phase.

7. The ceramic dielectric of claim 1 , wherein the ceramic nanosheet comprises at least one of Ca 2 Nb 3 O 10 , Ca 2 NaNb 4 O 13 , Ca 2 Na 2 Nb 5 O 16 , Sr 2 Nb 3 O 10 , SrBi 4 Ti 4 O 15 , Ti 2 NbO 7 , and LaNb 2 O 7 .

8. The ceramic dielectric of claim 1 , wherein the ceramic dielectric comprises
a plurality of semiconductive grains comprising the bulk dielectric, and
an insulating grain boundary disposed between adjacent semiconductive grains of the plurality of semiconductive grains, the insulating grain boundary comprising the ceramic nanosheet.

9. The ceramic dielectric of claim 8 , wherein the composite dielectric is included in at least one of the semiconductive grains and the insulating grain boundary.

10. The ceramic dielectric of claim 1 , wherein the ceramic dielectric has a permittivity and a resistivity which is greater than a permittivity and a resistivity of the bulk dielectric.

11. The ceramic dielectric of claim 1 , wherein a permittivity of the ceramic dielectric is about twice or more of a permittivity of the bulk dielectric.

12. The ceramic dielectric of claim 1 , wherein the ceramic dielectric satisfies at least one of a permittivity at room temperature of greater than or equal to about 9,000 and a resistivity of greater than or equal to about 1×10 9 Ω·cm.

13. A ceramic dielectric comprising:
a plurality of grains of a ceramic dielectric; and
a grain boundary between adjacent grains of the plurality of grains, wherein the grain boundary comprises a ceramic nanosheet, and at least one of the grains and the grain boundary comprises
a composite ceramic comprising at least one of barium; titanium; calcium, sodium, tantalum, bismuth, and strontium, and
at least one of tungsten, molybdenum, chromium, niobium, vanadium, zirconium, hafnium, lead, tin, and lanthanum.

14. The ceramic dielectric of claim 13 , wherein the grains comprise a bulk dielectric comprising barium and titanium.

15. The ceramic dielectric of claim 13 , wherein the ceramic nanosheet may be represented by at least one of Chemical Formulae 1 to 3:
X m [A (n−1) M n O (3n+1) ]:  Chemical Formula 1

X r [A p M (p−1) O 3p ];  Chemical Formula 2

X r [M p O (2p+l) ];   Chemical Formula 3

wherein in Chemical Formulae 1 to 3; X, A, and M are each independently selected and
X is at least one of H, an alkali metal, a cation, or a cationic compound,
A is at least one of Ca, Na, Ta, Bi, Ba, or Sr,
M is different from A and at least one of W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, or Ti, and
0≤m≤2,n≥1,0≤r≤2, and p≥1.

16. The ceramic dielectric of claim 13 , wherein the ceramic nanosheet comprises at least one of Ca 2 Nb 3 O 10 , Ca 2 NaNb 4 O 13 , Ca 2 Na 2 Nb 5 O 16 , Sr 2 Nb 3 O 10 , SrBi 4 Ti 4 O 15 , Ti 2 NbO 7 , and LaNb 2 O 7 .

17. The ceramic dielectric of claim 13 , wherein the composite dielectric further comprises at least one of silicon, manganese, aluminum, iron, zinc, gallium, dysprosium, or indium.

18. A method of manufacturing a ceramic dielectric, the method comprising:
heat-treating a metal precursor comprising a barium precursor and a titanium precursor to obtain a bulk dielectric;
exfoliating a layered ceramic powder to prepare a ceramic nanosheet;
coating the ceramic nanosheet on a surface of the bulk dielectric; and
sintering the bulk dielectric coated with the ceramic nanosheet to manufacture the ceramic dielectric, the ceramic dielectric comprising a composite dielectric of the bulk dielectric and the ceramic nanosheet.

19. The method of claim 18 , wherein the sintering of the bulk dielectric coated with the ceramic nanosheet comprises
a first heat-treatment at about 1100° C. to about 1400° C., and
a second heat-treatment at about 600° C. to about 800° C.

20. The method of claim 19 , wherein the first heat-treatment is performed under a reducing atmosphere, and
the second heat-treatment is performed under an oxidizing atmosphere.

21. The method of claim 18 , further comprises
adding an oxide comprising at least one selected from Si, Mn, Al, Fe, Zn, Ga, Dy, and In, before the sintering of the bulk dielectric coated with the ceramic nanosheet.

22. The method of claim 18 , wherein the ceramic nanosheet comprises at least one of Ca 2 Nb 3 O 10 , Ca 2 NaNb 4 O 13 , Ca 2 Na 2 Nb 5 O 16 , Sr 2 Nb 3 O 10 , SrBi 4 Ti 4 O 15 , Ti 2 NbO 7 , and LaNb 2 O 7 .

23. The method of claim 18 , wherein the ceramic nanosheet is included in an amount of about 1 to about 15 parts by weight, based on 100 parts by weight of the bulk dielectric.

24. A ceramic electronic component, comprising:
a pair of electrodes facing each other; and
a ceramic dielectric layer disposed between the pair of electrodes,
wherein the ceramic dielectric layer comprises the ceramic dielectric of claim 1 .

25. The ceramic electronic component of claim 24 , wherein the ceramic electronic component is a multilayer ceramic capacitor in which a plurality of unit capacitors comprising the pair of electrodes and the ceramic dielectric layer are laminated.

26. An electronic device comprising the ceramic electronic component of claim 24 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Hyeon Cheol
• Kwak Chan
• Moon Kyoung-Seok
• Yang Daejin
• Jeong Tae Won

Classifications

• C04B2235/652

  Reduction treatment (C04B2235/664 takes precedence) · CPC title

• C04B35/495

  based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title

• C04B35/62685

  characterised by the order of addition of constituents or additives · CPC title

• C04B2235/3255

  Niobates or tantalates, e.g. silver niobate · CPC title

• C04B2235/3234

  Titanates, not containing zirconia · CPC title