Method for manufacturing light-emitting element inlcuding quantum dots
US-12150220-B2 · Nov 19, 2024 · US
US9073752B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9073752-B2 |
| Application number | US-201113112128-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 20, 2011 |
| Priority date | May 20, 2010 |
| Publication date | Jul 7, 2015 |
| Grant date | Jul 7, 2015 |
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The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.
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What is claimed is: 1. A quantum dot light emitting element, comprising: a substrate; an anode formed on the substrate; a quantum light emitting layer formed on the anode, the quantum light emitting layer comprising charge transporting particles and quantum dots mixed therein; and a cathode formed on the quantum light emitting layer, wherein the charge transporting particles comprise oxide nanoparticles, wherein the oxide nanoparticles comprise p-type semiconductor nanop…
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