Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device comprising nitrogen radicals and oxygen-containing, silicon-containing, or carbon-containing precursors

Patent metadata

Field	Value
Publication number	US-10930846-B2
Application number	US-201916655672-A
Country	US
Kind code	B2
Filing date	Oct 17, 2019
Priority date	Jul 1, 2013
Publication date	Feb 23, 2021
Grant date	Feb 23, 2021

Abstract

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

First claim

What is claimed is:

1. A method of forming a silicon-containing dielectric material, comprising:
exposing a material to a plasma comprising nitrogen radicals and an oxygen-containing precursor to absorb oxygen onto the material; and
exposing the material comprising the absorbed oxygen to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon oxide material on the material.

2. The method of claim 1 , wherein exposing the material comprising the absorbed oxygen to the silicon-containing precursor in the non-plasma environment to form monolayers of a silicon oxide material comprises forming a silicon dioxide material on the material.

3. The method of claim 1 , wherein forming the monolayers of the silicon oxide material comprises forming the silicon oxide material on the material at a rate of from about 10 Å/min to about 500 Å/min.

4. The method of claim 1 , wherein forming the monolayers of the silicon oxide material comprises forming the silicon oxide material on the material at a thickness within a range of from about 10 Å to about 1000 Å.

5. The method of claim 1 , further comprising, during the exposing the material comprising the absorbed oxygen to the silicon-containing precursor in the non-plasma environment, including a carbon-containing precursor to form monolayers of silicon and carbon on the absorbed oxygen.

6. The method of claim 1 , further comprising terminating the plasma and exposing the material comprising the absorbed oxygen to a non-reactive gas before exposing the material comprising the absorbed oxygen to the silicon-containing precursor in the non-plasma environment.

7. A method of forming a semiconductor device, comprising:
forming stacks comprising one or more chalcogenide materials; and
forming a silicon carbon nitride material on the stacks, comprising:
exposing the stacks to a plasma comprising nitrogen radicals;
absorbing nitrogen onto the stacks; and
exposing the stacks comprising the absorbed nitrogen to a silicon-containing precursor and a carbon-containing precursor in a non-plasma environment to form monolayers of silicon and carbon bonded to the absorbed nitrogen.

8. The method of claim 7 , wherein exposing the stacks to the plasma comprising the nitrogen radicals and adsorbing the nitrogen onto the stacks comprises absorbing the nitrogen at a temperature between about 20° C. and about 200° C.

9. The method of claim 7 , wherein exposing the stacks to the plasma comprising the nitrogen radicals comprises forming the plasma from a nitrogen radical precursor free of ammonia or an amine.

10. The method of claim 7 , wherein exposing the stacks to the plasma comprising the nitrogen radicals comprises exposing the stacks to a nitrogen radical precursor comprising elemental nitrogen, nitrous oxide, ammonia, nitrogen oxide, azide, an azide derivative, dinitrogen pentoxide, hydrazine, a hydrazine derivative, or a combination thereof under plasma conditions.

11. The method of claim 10 , wherein exposing the stacks to the plasma comprising the nitrogen radicals comprises initiating the plasma comprising the nitrogen radicals before exposing the stacks to the plasma.

12. The method of claim 7 , further comprising terminating the plasma before exposing the stacks comprising the absorbed nitrogen to the silicon-containing precursor.

13. The method of claim 7 , wherein forming the silicon carbon nitride material on the stacks comprises forming the silicon carbon nitride material directly on the stacks.

14. A method of forming a semiconductor device, comprising:
forming stacks comprising one or more chalcogenide materials; and
forming a silicon carbon oxide material on the stacks, comprising:
exposing the stacks to a plasma comprising nitrogen radicals formed from nitrogen gas and an oxygen-containing precursor formed from carbon dioxide or nitrous oxide;
absorbing oxygen onto the stacks; and
exposing the stacks comprising the absorbed oxygen to a silicon-containing precursor and a carbon-containing precursor in a non-plasma environment to form monolayers of silicon and carbon bonded to the absorbed oxygen.

15. The method of claim 14 , wherein forming the stacks comprising the one or more chalcogenide materials comprises forming the stacks comprising the one or more chalcogenide materials and one or more carbon materials.

16. The method of claim 14 , wherein exposing the stacks to the silicon-containing precursor and the carbon-containing precursor in the non-plasma environment comprises exposing the stacks to the silicon-containing precursor and the carbon-containing precursor comprising trimethyl silane, an alkyl amine, acetylene, propylene, or a combination thereof.

Assignees

• Micron Technology Inc

Inventors

• Omstead Thomas R
• Franklin Cole S

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title