Semiconductor device structures including silicon-containing dielectric materials

Patent metadata

Field	Value
Publication number	US-10121966-B2
Application number	US-201615130550-A
Country	US
Kind code	B2
Filing date	Apr 15, 2016
Priority date	Jul 1, 2013
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

First claim

What is claimed is:

1. A semiconductor device structure comprising:
stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material on each of the stacks, wherein the at least one conformal silicon-containing dielectric material comprises a thickness of from 10 Å to 1000 Å.

2. The semiconductor device structure of claim 1 wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% oxygen.

3. The semiconductor device structure of claim 1 , wherein the at least one conformal silicon-containing dielectric material comprises at least one of a silicon oxide material, a silicon nitride material, a silicon carbon nitride material, or a silicon carbon oxide material.

4. The semiconductor device structure of claim 1 , wherein each of the stacks comprises tungsten, a first electrode on the tungsten, a first chalcogenide material on the first electrode, a second electrode on the first chalcogenide material, a second chalcogenide material on the second electrode, and a third electrode on the second chalcogenide material.

5. A semiconductor device structure comprising:
stacks separated from one another by a distance of from 50 Å to 220 Å; and
at least one conformal silicon-containing dielectric material on each of the stacks, wherein the at least one conformal silicon-containing dielectric material comprises from 10% to 90% silicon and from 10% to 90% nitrogen.

6. The semiconductor device structure of claim 5 wherein the at least one conformal silicon-containing dielectric material comprises from 30% to 70% silicon, from 4% to 25% carbon, and from 5% to 66% nitrogen.

7. The semiconductor device structure of claim 5 wherein the at least one conformal silicon-containing dielectric material comprises silicon carbon nitride comprising 50% silicon, 20% carbon, and 30% nitrogen.

8. The semiconductor device structure of claim 5
wherein each of the stacks comprises tungsten, a first electrode on the tungsten, a first chalcogenide material on the first electrode, a second electrode on the first chalcogenide material, a second chalcogenide material on the second electrode, and a third electrode on the second chalcogenide material; and
wherein each of the first electrode, the second electrode, and the third electrode comprises carbon.

9. The semiconductor device structure of claim 8 , wherein the silicon-containing dielectric material comprises SiC x N y , wherein each of x and y is an integer greater than or equal to 1.

10. The semiconductor device structure of claim 5 wherein the at least one conformal silicon-containing dielectric material comprises a first silicon containing dielectric material comprising silicon carbon nitride, a second silicon-containing dielectric material comprising one of silicon oxide, silicon nitride, or silicon carbon oxide, and a third silicon-containing dielectric material comprising another of silicon oxide, silicon nitride, or silicon carbon oxide.

11. The semiconductor device structure of claim 5 wherein the stacks are separated from one another by a distance of from 180 Å to 200 Å.

12. The semiconductor device structure of claim 5 , wherein each of the stacks comprises tungsten, a first electrode on the tungsten, a first chalcogenide material on the first electrode, a second electrode on the first chalcogenide material, a second chalcogenide material on the second electrode, and a third electrode on the second chalcogenide material and a silicon carbon nitride material in contact with the tungsten, first electrode, first chalcogenide material, second electrode, second chalcogenide material and third electrode of the stack.

13. A semiconductor device structure comprising:
stacks comprising carbon and chalcogenide materials on a material, the stacks separated from one another by a distance of from 50 Å to 220 Å; and
a silicon carbon nitride material in direct contact with the carbon and chalcogenide materials of the stacks.

14. The semiconductor device structure of claim 13 , wherein the silicon carbon nitride material comprises monolayers of silicon bonded to absorbed nitrogen on the material.

15. The semiconductor device structure of claim 13 , wherein the silicon carbon nitride material comprises monolayers of silicon bonded to chemisorbed nitrogen on the material.

16. The semiconductor device structure of claim 13 , wherein the silicon carbon nitride material comprises monolayers of silicon bonded to absorbed oxygen on the material.

17. The semiconductor device structure of claim 13 , wherein the silicon carbon nitride material comprises monolayers of silicon bonded to chemisorbed oxygen on the material.

18. A semiconductor device structure comprising:
stacks separated from one another by a distance of from 50 Å to 220 Å, the stacks comprising tungsten, a first carbon electrode on the tungsten, a first chalcogenide material on the first carbon electrode, a second carbon electrode on the first chalcogenide material, a second chalcogenide material on the second carbon electrode, and a third carbon electrode on the second chalcogenide material; and
a silicon carbon nitride material in direct contact with the carbon and chalcogenide materials of the stacks.

Assignees

• Micron Technology Inc

Inventors

• Omstead Thomas R
• Franklin Cole S

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title