Illumination optical unit for a mask inspection system and mask inspection system with such an illumination optical unit
US-10042248-B2 · Aug 7, 2018 · US
US10928734B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10928734-B2 |
| Application number | US-201916579398-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 23, 2019 |
| Priority date | Mar 31, 2017 |
| Publication date | Feb 23, 2021 |
| Grant date | Feb 23, 2021 |
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An optical assembly guides an output beam of a free electron laser to a downstream illumination-optical assembly of an EUV projection exposure apparatus. The optical assembly has first and a second GI mirrors, each with a structured reflection surface to be impinged upon by the output beam. A first angle of incidence on the first GI mirror is between one mrd and 10 mrad. A maximum first scattering angle is produced, amounting to between 50% and 100% of the first angle of incidence. A second angle of incidence on the second GI mirror is at least twice as large as the first angle of incidence. A maximum second scattering angle of the output beam amounts to between 30% and 100% of the second angle of incidence. The two planes of incidence on the two GI mirrors include an angle with respect to one another that is greater than 45°.
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What is claimed is: 1. An optical assembly, comprising: a first GI mirror comprising a structured first reflection surface configured to be impinged upon by a beam at a first angle of incidence in a first plane of incidence between the beam and the first reflection surface, the first angle of incidence being between one mrad and 10 mrad, the structured first reflection surface being configured to produce a maximum first scattering angle of the beam amounting to at least 50% and at most 100% of the first angle of incidence; a second GI mirror downstream of the first GI mirror in a beam path of the beam, the second GI mirror comprising a structured second reflection surface configured to be impinged upon by the beam at a second angle of incidence in a second plane of incidence between the beam and the second reflection surface, the second plane of incidence including an angle with the first plane of incidence that is greater than 45°, the second angle of incidence being at least twice as large as the first angle of incidence, the structured second reflection surface configured to produce a maximum second scattering angle of the beam amounting to at least 30% and at most 100% of the second angle of incidence; and a hollow waveguide in the beam path of the output beam after the second GI mirror. 2. The optical assembly of claim 1 , wherein the beam is an EUV light beam. 3. The optical assembly of claim 1 , wherein the beam is an output beam of a free electron laser. 4. The optical assembly of claim 1 , wherein the first GI mirror is configured so that a beam path between a source of the beam and the first GI mirror is shorter than eight meters. 5. The optical assembly of claim 1 , wherein the first GI mirror is configured so that, when the output beam is linearly polarized, the first GI mirror reflects the latter with s-polarization. 6. The optical assembly of claim 1 , wherein reflecting inner surfaces of the hollow waveguide have an angle of between 10° and 80° in relation to at least one of the planes of incidence. 7. The optical assembly of claim 1 , further comprising a further mirror downstream of the hollow waveguide, wherein the further mirror is configured to shape the beam of the output beam after emergence from the hollow waveguide. 8. The optical assembly of claim 1 , further comprising a further mirror between the second GI mirror and the hollow waveguide in the beam path of the output beam, wherein the further mirror is configured to shape the beam of the output beam before entry into the hollow waveguide. 9. The optical assembly of claim 1 , further comprising: a third mirror downstream of the hollow waveguide; and a fourth mirror between the second GI mirror and the hollow waveguide in the beam path of the output beam, wherein: reflecting inner surfaces of the hollow waveguide have an angle of between 10° and 80° in relation to at least one of the planes of incidence; the third mirror is configured to shape the beam of the output beam after emergence from the hollow waveguide; and the fourth mirror is configured to shape the beam of the output beam before entry into the hollow waveguide. 10. The optical assembly of claim 1 , further comprising a hollow waveguide assembly which comprises: the hollow waveguide; a first electrode close to an entry of the beam into the hollow waveguide; a second electrode close to an exit of the beam from the hollow waveguide; and an ionization light source configured to cause impingement on a region of the beam path near at least one of the first and second electrodes. 11. The optical assembly of claim 1 , further comprising a magnet arrangement which comprises a first magnet pole shoe pair configured to produce a first magnetic field with field lines that extend transversely to the beam path. 12. The optical assembly of claim 11 , further comprising a second magnet pole shoe pair configured to produce a second magnetic field with field lines that extend transversely to the beam path and transversely to the field lines of the first magnet pole shoe pair. 13. An illumination optical unit, comprising: an optical assembly according to claim 1 , wherein the optical assembly is configured to illuminate an object field with the beam as illumination light, and the illumination optical unit is a microlithography illumination optical unit. 14. An optical system, comprising: an optical assembly according to claim 1 ; and a projection optical unit, wherein the optical assembly is configured to illuminate an object field with the beam as illumination light, and the projection optical unit is configured to image the object field into an image field. 15. An apparatus, comprising: an FEL configured to provide the beam; an optical assembly according to claim 1 ; and a projection optical unit, wherein the optical assembly is configured to illuminate an object field with the beam as illumination light, the projection optical unit is configured to image the object field into an image field, and the apparatus is a microlithography projection exposure apparatus. 16. A method of using a microlithography projection exposure apparatus comprising an optical assembly and a projection optical unit, the method comprising: using the optical assembly is configured to illuminate an object field with a beam as illumination light; and using the projection optical unit to image the object field into an image field, wherein the optical assembly is an optical assembly according to claim 1 . 17. The optical assembly of claim 1 , wherein: the beam is an EUV light beam; the hollow waveguide is configured to guide the EUV light beam along the beam path; and the hollow waveguide comprises: a first electrode close to an entry of the EUV light beam into the hollow waveguide; a second electrode close to an exit of the EUV light beam from the hollow waveguide; and an ionization light source configured to cause impingement on a region of the beam path of the EUV light beam near at least one of the first and second electrodes. 18. The optical arrangement of claim 1 , wherein: the beam is an EUV light beam; and the optical arrangment further comprises a magnet arrangement, which comprises a first magnet pole shoe pair configured to produce a first magnetic field with field lines that extend transversely to the beam path. 19. The optical arrangement of claim 18 , further comprising a second magnet pole shoe pair configured to produce a second magnetic field with field lines that extend transversely to the beam path and transversely to the field lines of the first magnet pole shoe pair.
using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) · CPC title
Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title
Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like · CPC title
Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection · CPC title
for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another (G02B5/3083 takes precedence; light guide coupling means utilising polarising elements G02B6/34) · CPC title
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