Method of forming a micro-structure

Patent metadata

Field	Value
Publication number	US-10927472-B2
Application number	US-201816212435-A
Country	US
Kind code	B2
Filing date	Dec 6, 2018
Priority date	Oct 21, 2010
Publication date	Feb 23, 2021
Grant date	Feb 23, 2021

Abstract

A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

First claim

What is claimed is:

1. A method of forming a micro-structure, comprising:
forming a multi-layered structure including i) an oxidizable material layer established on a substrate and ii) an other oxidizable material layer established on the oxidizable material layer, the oxidizable material layer being formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1;
forming a template from the other oxidizable material layer, the template including a plurality of pores;
growing a nano-pillar inside each of the pores to a height lower than a height of the pore; then
selectively removing a portion of the template to form a substantially even plane across exposed ends of the nano-pillars that is oriented in a position opposed to the substrate;
depositing a material on at least a portion of the substantially even plane to form a film layer supported on a remaining portion of the template and the nano-pillars; and then
selectively removing the remaining portion of the template to expose a full height of each nano-pillar and form the micro-structure with each nano-pillar under the film layer surrounded by empty space and the film layer supported on the nano-pillars;
wherein the forming of the plurality of pores in the other oxidizable material layer is accomplished by anodizing the other oxidizable material layer and the growing of the nano-pillars is accomplished by anodizing the oxidizable material layer.

2. The method as defined in claim 1 wherein the forming of the template and the growing of the nano-pillars are accomplished via anodization using any of oxalic acid, sulfuric acid, phosphoric acid, chromic acid or mixtures thereof as an electrolyte.

3. The method as defined in claim 1 , further comprising tuning at least one of a height, a pitch, a diameter, or an aspect ratio of each of the nano-pillars by adjusting at least one parameter of an anodizing process used to grow the nano-pillars.

4. The method as defined in claim 3 wherein the adjusting further tunes a gap between adjacent nano-pillars.

5. The method as defined in claim 1 further comprising:
prior to selectively removing the remaining portion of the template, selectively removing only a portion of the film layer from the substantially even plane to re-expose the end of each nano-pillar surrounding a remaining portion of the film layer; and
after selectively removing the remaining portion of the template to expose a full height of each nano-pillar, not removing at least some of the nano-pillars surrounding the remaining portion of the film layer to form the micro-structure surrounded by free standing nano-pillars.

6. The method as defined in claim 1 , further comprising controlling a mass of the micro-structure by adjusting at least one of a thickness of the film layer or a lateral area of the film layer.

7. The method as defined in claim 1 wherein the oxidizable material layer is selected from the group consisting of tantalum, tungsten, niobium, and titanium.

8. The method as defined in claim 7 wherein the other oxidizable material layer is selected from the group consisting of aluminum, aluminum alloys, titanium, and silicon.

9. The method as defined in claim 1 wherein each of the nano-pillars includes a pitch ranging from about 30 nm to about 500 nm, a diameter ranging from about 10 nm to about 350 nm, a height ranging from about 10 nm to about 1000 nm, and an aspect ratio that is greater than 10.

10. The method as defined in claim 1 wherein the film layer includes a surface modified by a material chosen from aluminum oxide, zirconium oxide, titanium dioxide, silicon dioxide, tungsten oxide, zinc oxide, hafnium oxide, and combinations thereof.

11. The method as defined in claim 1 wherein the film layer includes at least one opening defined therein.

12. A method of forming a micro-structure, comprising:
forming a multi-layered structure including i) an oxidizable material layer established on a substrate and ii) an other oxidizable material layer established on the oxidizable material layer;
forming, via anodization, a template from the other oxidizable material layer, the template including a plurality of pores;
growing, via anodization, a nano-pillar inside each of the pores to a height lower than a height of the pore; then
selectively removing a portion of the template to form a substantially even plane across exposed ends of the nano-pillars that is oriented in a position opposed to the substrate;
depositing a material on at least a portion of the substantially even plane to form a film layer supported on a remaining portion of the template and the nano-pillars; and then
selectively removing the remaining portion of the template to expose a full height of each nano-pillar and form the micro-structure with each nano-pillar under the film layer surrounded by empty space and the film layer supported on the nano-pillars;
wherein the oxidizable material layer is formed of a conductive oxidizable material having an expansion coefficient, during oxidation, that is more than 1; and
wherein the other oxidizable material layer is a conductor chosen from a metal or metal alloy that, after electrochemical oxidation, produces a porous oxide or dielectric.

13. The method as defined in claim 12 wherein the oxidizable material layer is selected from the group consisting of tantalum, tungsten, niobium, and titanium.

14. The method as defined in claim 13 wherein the other oxidizable material layer is selected from the group consisting of aluminum, aluminum alloys, titanium, and silicon.

15. The method as defined in claim 14 wherein an oxidizable material forming the oxidizable material layer and an other oxidizable material forming the other oxidizable material layer are substantially pure.

Assignees

• Hewlett Packard Development Co

Inventors

• Mardilovich Peter
• Fuller Anthony M
• Wei Qingqiao

Classifications

• C25D11/022

  Anodisation on selected surface areas · CPC title

• Y10S977/888

  Shaping or removal of materials, e.g. etching · CPC title

• Y10T428/24355

  Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title

• C25D11/24

  Chemical after-treatment · CPC title

• B81C1/00031

  Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002) · CPC title