Bright silver based quaternary nanostructures

Patent metadata

Field	Value
Publication number	US-10927294-B2
Application number	US-202016905721-A
Country	US
Kind code	B2
Filing date	Jun 18, 2020
Priority date	Jun 20, 2019
Publication date	Feb 23, 2021
Grant date	Feb 23, 2021

Abstract

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

First claim

What is claimed is:

1. Nanostructures comprising Ag, In, Ga, and S (AIGS) and a shell comprising Ag, Ga and S (AGS), wherein the nanostructures have a peak emission wavelength (PWL) in the range of 480-545 nm and wherein at least about 80% of the emission is band-edge emission, and wherein the nanostructures exhibit a quantum yield (QY) of 80-99.9%.

2. The nanostructures of claim 1 , wherein the nanostructures have an emission spectrum with a FWHM of less than 40 nm.

3. The nanostructures of claim 2 , wherein the nanostructures have an emission spectrum with a FWHM of 36-38 nm.

4. The nanostructures of claim 1 , wherein the nanostructures have a QY of 82-96%.

5. The nanostructures of claim 4 , wherein the nanostructures have a QY of 85-95%.

6. The nanostructures of claim 4 , wherein the nanostructures have a QY of 86-94%.

7. The nanostructures of claim 1 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) greater than or equal to 0.8.

8. The nanostructures of claim 7 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) in the inclusive range 0.8-2.5.

9. The nanostructures of claim 8 , wherein the nanostructures have an OD 450 /mass (mL·mg −1 ·cm −1 ) in the inclusive range 0.87-1.9.

10. The nanostructures of claim 1 , wherein the average diameter of the nanostructures is less than 10 nm by TEM.

11. The nanostructures of claim 10 , wherein the average diameter is about 5 nm.

12. The nanostructures of claim 1 , wherein at least about 80% of the emission is band-edge emission.

13. The nanostructures of claim 1 , wherein at least about 90% of the emission is band-edge emission.

14. The nanostructures of claim 13 , wherein 92-98% of the emission is band-edge emission.

15. The nanostructures of claim 13 , wherein 93-96% of the emission is band-edge emission.

16. The nanostructures of claim 1 , that are quantum dots.

17. A nanostructure composition comprising:
(a) at least one population of nanostructures of claim 1 , and
(b) at least one organic resin.

18. The nanostructure composition of claim 17 , further comprising at least one second population of nanostructures that have a PWL greater than 545 nm.

19. A method of preparing a nanostructure composition, the method comprising:
(a) providing at least one population of nanostructures of claim 1 ; and
(b) admixing at least one organic resin with the at least one population of (a).

20. The method of claim 19 , wherein 92-98% of the emission is band-edge emission.

21. The method of claim 19 , wherein 93-96% of the emission is band-edge emission.

22. A device comprising the composition of claim 17 .

23. A film comprising the composition of claim 17 , wherein the nanostructures are embedded in a matrix that comprises the film.

24. A nanostructure molded article comprising:
(a) a first conductive layer;
(b) a second conductive layer; and
(c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises the composition of claim 17 .

25. A method of making the nanostructures of claim 1 , comprising
(a) reacting Ga(acetylacetonate) 3 , InCl 3 , and a ligand optionally in a solvent at a temperature sufficient to give an In-Ga reagent, and
(b) reacting the In-Ga reagent with Ag 2 S nanostructures at a temperature sufficient to make AIGS nanostructures,
(c) reacting the AIGS nanostructures with an oxygen-free Ga salt in a solvent containing a ligand at a temperature sufficient to form the nanostructures with a gradient comprising the AIGS core to AGS without a distinct layer of GS.

26. The method of claim 25 , wherein the ligand is an alkylamine.

27. The method of claim 26 , wherein the alkylamine is oleylamine.

28. The method of claim 25 , wherein in (a) the solvent is present and is octadecene, squalane, dibenzylether or xylene.

29. The method of claim 25 , wherein the temperature sufficient in (a) is 100 to 280° C.; the temperature sufficient in (b) is 150 to 260° C.; and the temperature sufficient in (c) is 170 to 280° C.

30. The method of claim 25 , wherein the temperature sufficient in (a) is about 210° C., the temperature sufficient in (b) is about 210° C., and the temperature sufficient in (c) is about 240° C.

Assignees

• Nanosys Inc

Inventors

• Mamuye Ashenafi Damtew
• Sunderland Christopher
• JEN-LA PLANTE Ilan
• Wang Chunming
• Curley John J

Classifications

• B32B2264/107

  Ceramic · CPC title

• B32B2260/025

  Particulate layer · CPC title

• C08K2201/011

  Nanostructured additives · CPC title

• C08K2201/003

  Additives being defined by their diameter · CPC title

• C08K9/02

  Ingredients treated with inorganic substances · CPC title