Micro light-emitting diode (LED) elements and display

Patent metadata

Field	Value
Publication number	US-10923622-B2
Application number	US-201916563558-A
Country	US
Kind code	B2
Filing date	Sep 6, 2019
Priority date	Aug 18, 2017
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

First claim

What is claimed is:

1. A red-emitting diode structure, comprising:
a GaN nanowire above a substrate;
an InGaN shell layer on the GaN nanowire;
an InGaN active layer on the InGaN shell layer, wherein the InGaN active layer has a greater concentration of In than the InGaN shell layer; and
a cladding layer directly on the InGaN active layer, the cladding layer comprising p-type ZnO.

2. The red-emitting diode structure of claim 1 , wherein the InGaN shell layer is an In 0.2 Ga 0.8 N material layer.

3. The red-emitting diode structure of claim 2 , wherein the InGaN active layer is an In 0.4 Ga 0.6 N material layer.

4. The red-emitting diode structure of claim 1 , wherein the InGaN active layer emits a wavelength in the range of 610-630 nanometers.

5. The red-emitting diode structure of claim 1 , wherein the substrate is a silicon substrate or a sapphire substrate.

6. A light-emitting diode, comprising:
a red-emitting diode structure having sidewalls and a tapered portion the red-emitting diode structure, comprising:
a GaN nanowire above a substrate;
an InGaN shell layer on the GaN nanowire;
an InGaN active layer on the InGaN shell layer, wherein the InGaN active layer has a greater concentration of In than the InGaN shell layer; and
a cladding layer on the InGaN active layer, the cladding layer comprising p-type ZnO;

a contact metal over and along the sidewalls and the tapered portion of the red-emitting diode structure, the contact metal having a non-uniform thickness over the red-emitting diode structure; and
an insulating material layer laterally surrounding contact metal, the insulating material layer having a surface co-planar with a surface of the contact metal.

7. The light-emitting diode of claim 6 , wherein the InGaN shell layer is an In 0.2 Ga 0.8 N material layer.

8. The light-emitting diode of claim 7 , wherein the InGaN active layer is an In 0.4 Ga 0.6 N material layer.

9. The light-emitting diode of claim 6 , wherein the InGaN active layer emits a wavelength in the range of 610-630 nanometers.

Assignees

• Intel Corp

Inventors

• Ahmed Khaled
• Pancholi Anup
• Khakifirooz Ali

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W72/0198

  batch processes · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H29/142 Primary

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/8314

  extending at least partially onto an outer side surface of the bodies · CPC title