Nanostructure semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-9406839-B2
Application number	US-201514833832-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Aug 25, 2014
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

First claim

The invention claimed is:

1. A semiconductor light emitting device comprising:
a substructure including at least two light emitting regions, each including a plurality of three-dimensional (3-D) light emitting nanostructures;
wherein sizes of the 3-D light emitting nanostructures in one of the at least two light emitting regions are different from those in the other of the at least two light emitting regions,
each of the plurality of the 3-D light emitting nanostructures includes a first conductivity-type semiconductor core, a second conductivity-type semiconductor shell, and an active layer disposed between the first conductivity-type semiconductor core and the second conductivity-type semiconductor shell and having at least one quantum well,
the at least one quantum well has an indium (In) composition ratio varying in a radial direction of each of the plurality of light emitting nanostructures, and
the at least one quantum well in one of the at least two regions has a different thickness from the at least one quantum wells in the other of the at least two regions.

2. The semiconductor light emitting device of claim 1 , wherein when the In composition ratio of the at least one quantum well is represented in a graph at least two inflection points are present in a distribution of the In composition ratio in the radial direction.

3. The semiconductor light emitting device of claim 2 , wherein the distribution of the In composition ratio in the at least one quantum well is asymmetrical.

4. The semiconductor light emitting device of claim 1 , wherein the at least one quantum well includes two peripheral well regions and a central quantum well region between the two peripheral well regions, the central quantum well region having a higher In composition ratio than the two peripheral well regions.

5. The semiconductor light emitting device of claim 4 , wherein a thickness of the central quantum well region (t) is measured from at least one of an inflection point in a distribution of the In composition ratio in the radial direction and a change in slope of a function representing a thickness versus In composition ratio of each of the plurality of quantum wells.

6. The semiconductor light emitting device of claim 4 , wherein the at least one quantum well has two inflection points in a distribution of the In composition ratio in the radial direction, and the central quantum well region (t) is defined as a region between the two inflection points.

7. The semiconductor light emitting device of claim 6 , wherein a ratio (t/d*100) of a thickness of the central quantum well region (t) to an overall thickness of the quantum well (d) is 15% to 90%.

8. The semiconductor light emitting device of claim 6 , the central quantum well region in one of the at least two regions has a different thickness from the central quantum well region in the other of the at least two regions.

9. The semiconductor light emitting device of claim 1 , the active layer in one of the at least two regions emits light having a different wavelength from light emitted by the active layer in the other of the at least two regions.

10. The semiconductor light emitting device of claim 1 , each of the plurality of 3-D light emitting nanostructures has a hexagonal prism structure including a tip portion, the tip portion having a hexagonal pyramid structure.

11. The semiconductor light emitting device of claim 1 , wherein the 3-D light emitting nanostructures of one of the at least two light emitting regions have different diameters from the 3-D light emitting nanostructures of the other of the at least two light emitting regions.

12. The semiconductor light emitting device of claim 1 , wherein the 3-D light emitting nanostructures of one of the at least two light emitting regions have different pitches from the 3-D light emitting nanostructures of the other of the at least two light emitting regions.

13. The semiconductor light emitting device of claim 1 , wherein the at least one quantum well includes a plurality of quantum wells, and the active layer further comprises a plurality of quantum barriers alternating with the plurality of quantum wells.

14. The semiconductor light emitting device of claim 13 , wherein each of the plurality of the quantum wells has two inflection points in a distribution of the In composition ratio in the radial direction, and includes two peripheral well regions and a central quantum well region between the two peripheral well regions, the central quantum well region being defined as a region between the two inflection points and having a higher In composition ratio than the two peripheral well regions, and the central quantum well region in one of the at least two regions has a different thickness from the central quantum well region in the other of the at least two regions.

15. A semiconductor light emitting device comprising:
a substructure including at least two light emitting regions, each including a plurality of three-dimensional (3-D) light emitting nanostructures,
wherein sizes of the 3-D light emitting nanostructures in one of the at least two light emitting regions are different from those in the other of the at least two light emitting regions,
each of plurality of the 3-D light emitting nanostructures has a hexagonal prism structure and includes a first conductivity-type semiconductor core, a second conductivity-type semiconductor shell, and an active layer disposed between the first conductivity-type semiconductor core and the second conductivity-type semiconductor shell and having at least one quantum well,
wherein the at least one quantum well has an indium (In) composition ratio varying in a radial direction of each of the plurality of light emitting nanostructures, and at least two inflection points are present in a distribution of the In composition ratio along the radial direction, when the In composition ratio of the at least one quantum well is represented in a graph.

16. A semiconductor light emitting device, comprising:
a plurality of three-dimensional (3-D) light emitting nanostructures, each including a first conductivity-type semiconductor core, a second conductivity-type semiconductor shell, and an active layer disposed between the first conductivity-type semiconductor core and the second conductivity-type semiconductor shell and having a plurality of quantum wells and a plurality of quantum barriers;
wherein the plurality of 3-D light emitting structures are divided into at least two groups including a first group and a second group, each group including two or more 3-D light emitting structures,
wherein the 3-D light emitting nanostructures of the second group have greater diameters than the 3-D light emitting nanostructures of the first group, and the active layers of the second group emits second light having a longer wavelength from the first light emitted by the active layers of the first group,
wherein the quantum wells of the 3-D light emitting nanostructures of the second group have greater thicknesses than the quantum wells of the 3-D light emitting nanostructures of the first group, and at least one of the quantum wells of each group has an indium (In) composition ratio varying in a radial direction of each of the 3D light emitting nanostructures.

17. The semiconductor light emitting device of claim 16 , wherein the at least two groups further include a third group and the diameters of the 3-D light emitting structures of the third group are greater than the diameter of the 3-D light emitting structures of the second group.

18. The semiconducto

Assignees

• Kim Jung Sub
• Seo Yeon Woo
• Lee Dong Gun
• Chung Byung Kyu
• Chun Dae Myung
• Choi Soo Jeong
• Samsung Electronics Co Ltd

Inventors

• Kim Jung Sub
• Seo Yeon Woo
• Lee Dong Gun
• Chung Byung Kyu
• Chun Dae Myung
• Choi Soo Jeong

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10H20/0363

  of optical field-shaping means · CPC title

• H10H20/0362

  of encapsulations · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/852

  Encapsulations · CPC title