Metal oxide film and manufacturing method thereof, thin film transistor and array substrate

Patent metadata

Field	Value
Publication number	US-10923347-B2
Application number	US-201916442830-A
Country	US
Kind code	B2
Filing date	Jun 17, 2019
Priority date	Nov 14, 2018
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.

First claim

What is claimed is:

1. A manufacturing method of a metal oxide film, comprising:
forming the metal oxide film on a base substrate; and
supplying a negative ion to the metal oxide film for a preset time period by performing an anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide,
wherein before performing the anodization method, the metal oxide film includes a plurality of oxygen vacancies, and
numbers of the plurality of oxygen vacancies per unit area of at least two different regions in the metal oxide film are unequal.

2. The manufacturing method of the metal oxide film according to claim 1 , wherein the oxygen vacancies in the metal oxide film are uniformly distributed after performing the anodization method.

3. The manufacturing method of the metal oxide film according to claim 1 , wherein the performing the anodization method comprises:
placing the metal oxide film in an electrolytic cell to serve as an anode, and supplying oxygen negative ions to the metal oxide film by an electrolysis method.

4. The manufacturing method of the metal oxide film according to claim 3 , wherein an electrolytic solution used in the electrolysis method is a mixed solution comprising ammonium tartrate, ethylene glycol, and water.

5. The manufacturing method of the metal oxide film according to claim 4 , wherein a mass percentage of the ammonium tartrate in the mixed solution is between 1% and 10%.

6. The manufacturing method of the metal oxide film according to claim 4 , wherein a mass percentage of the ethylene glycol in the mixed solution is between 50% and 80%.

7. The manufacturing method of the metal oxide film according to claim 4 , wherein a pH of the electrolytic solution is 6-7.

8. The manufacturing method of the metal oxide film according to claim 3 , wherein
the electrolysis method comprises one of a constant current mode, a constant voltage mode, a first constant current and then constant voltage mode, and a first constant voltage and then constant current mode; and
the constant current mode is to apply a constant current to the anode, the constant voltage mode is to apply a constant voltage to the anode.

9. The manufacturing method of the metal oxide film according to claim 8 , wherein
in a case where the electrolysis method employs the constant voltage mode, a voltage applied to the anode is between 60 V-100 V; or
in a case where the electrolysis method employs the constant current mode, a current density applied to the anode is between 1.5 mA/cm 2 -3 mA/cm 2 ; or
in a case where the electrolysis method employs the first constant current and then constant voltage mode or the first constant voltage and then constant current mode, a voltage applied to the anode during a constant voltage process is between 60 V-100 V, and a current density applied to the anode during a constant current process is between 1.5 mA/cm 2 -3 mA/cm 2 .

10. The manufacturing method of the metal oxide film according to claim 8 , wherein in a case where the electrolysis method employs the constant current mode or the constant voltage mode, the preset time period is 60-120 minutes.

11. The manufacturing method of the metal oxide film according to claim 8 , wherein in a case where the electrolysis method adopts the first constant current and then constant voltage mode or the first constant voltage and then constant current mode, at least one of a constant current process and a constant voltage process lasts for 40-80 minutes.

12. The manufacturing method of the metal oxide film according to claim 1 , wherein before performing the anodization method, the metal oxide film is formed by a solution method.

13. The manufacturing method of the metal oxide film according to claim 12 , wherein the solution method comprises:
forming a film by a precursor solution containing a metal oxide component using spin coating, inkjet printing or printing coating; and
treating the film by high temperature annealing.

14. The manufacturing method of the metal oxide film according to claim 1 , wherein before performing the anodization method, the metal oxide film is formed by magnetron sputtering.

15. The manufacturing method of the metal oxide film according to claim 14 , wherein at least two targets are provided for forming the metal oxide film in the magnetron sputtering, and the at least two targets are spaced apart from each other.

16. The manufacturing method of the metal oxide film according to claim 15 , wherein
before performing the anodization method, the metal oxide film comprises at least two different regions, the at least two different regions comprises a first region and a second region, and during the magnetron sputtering, the first region overlaps the targets and the second region overlaps a gap between the targets, and
a thickness of a portion of the metal oxide film located in the first region is greater than a thickness of a portion of the metal oxide film located in the second region.

17. A metal oxide film, manufactured by the manufacturing method of claim 1 .

18. A thin film transistor, comprising a semiconductor active layer, wherein the semiconductor active layer is formed by patterning the metal oxide film according to claim 17 .

19. An array substrate, comprising the thin film transistor according to claim 18 .

Assignees

• Hefei Xinsheng Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Song Wei
• Zhao Ce
• Kim Heekyu
• Liu Ning
• Ding Yuankui
• Li Wei
• Hu Yingbin

Classifications

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3426 Primary

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title