Systems and methods for modifying mesa sidewalls

Patent metadata

Field	Value
Publication number	US-10921706-B2
Application number	US-201816002471-A
Country	US
Kind code	B2
Filing date	Jun 7, 2018
Priority date	Jun 7, 2018
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

An apparatus, method, or platter for modifying mesa sidewalls of a template by cleaning or coating the mesa sidewalls. In which the template has a pattern area on a first surface of a mesa. Mesa sidewalls surround the first surface of the mesa. The mesa sidewalls are exposed to a gas. The gas modifies the mesa sidewalls. Resistance to the flow of gas towards the pattern area is provided.

First claim

What is claimed is:

1. An apparatus comprising:
a template chuck configured to hold a template;
a platter; and
a positioning system, during a first period of time, configured to position the template chuck and the platter at a first position relative to each other;
wherein the template has a pattern area on a first surface of a mesa;
wherein at least a portion of the platter has a removable coating and the first position is such that the removable coating contacts the pattern area;
wherein mesa sidewalls surround the first surface of the mesa; and
wherein the apparatus is configured to expose the mesa sidewalls to a first gas, wherein the first gas is configured to modify the mesa sidewalls during the first period;
wherein the first position is such that the removable coating provides resistance to flow of the first gas towards the pattern area of the template during the first period.

2. The apparatus according to claim 1 , wherein the platter includes wells which includes a precursor material, wherein the precursor material in the well produces the first gas during the first period, wherein the platter is configured to prevent the material in the well from producing the first gas prior to the first period.

3. The apparatus according to claim 1 , wherein the positioning system is further configured to form a first gap bounded by at least the sidewalls of the template, a recessed surface of the template, and the platter, wherein the platter includes one or more wells for storing a material which produces the first gas in the first gap.

4. An apparatus comprising:
a template chuck configured to hold a template;
a platter;
a positioning system, during a first period of time, configured to position the template chuck and the platter at a first position relative to each other;
wherein the template has a pattern area on a first surface of a mesa;

wherein mesa sidewalls surround the first surface of the mesa; and
wherein the apparatus is configured to expose the mesa sidewalls to a first gas, wherein the first gas is configured to modify the mesa sidewalls during the first period;
wherein the first position is such that the platter provides resistance to flow of the first gas towards the pattern area of the template during the first period;
wherein the first position is such that a first gap is formed, wherein the first gap is bounded by at least, the platter, the mesa sidewalls, and a recessed surface of the template, further comprising:

a gas controller including a valve, configured to supply the first gas; and
a first set of one or more ports, which connect the gas controller to the first gap.

5. The apparatus according to claim 2 , wherein the first position is such that a second gap is formed between the platter and the pattern area of the template, wherein the second gap provides resistance to the flow of the first gas in the first gap into the second gap.

6. The apparatus according to claim 2 , wherein the first set of one or more ports are in the template held in the template chuck.

7. The apparatus according to claim 4 , wherein the first gas is a reactive gas that either removes material from the mesa sidewalls, wherein the platter is configured to provide resistance to the flow of the reactive gas towards a coating on the pattern area.

8. The apparatus according to claim 4 , further comprising exhaust ports for pulling gas from the first gap.

9. An apparatus comprising:
a template chuck configured to hold a template;
a platter;
a positioning system, during a first period of time, configured to position the template chuck and the platter at a first position relative to each other;
wherein the first position is such that the platter provides resistance to flow of the first gas towards the pattern area of the template during the first period
wherein the first position is such that a first gap is formed, wherein the first gap is bounded by at least, the platter, the mesa sidewalls, and a recessed surface of the template;

a gas controller configured to supply the first gas; and
a first set of one or more ports, which connect the gas controller to the first gap;
wherein the template has a pattern area on a first surface of a mesa;
wherein mesa sidewalls surround the first surface of the mesa; and
wherein the apparatus is configured to expose the mesa sidewalls to a first gas, wherein the first gas is configured to modify the mesa sidewalls during the first period;
wherein the first gas is a precursor gas that becomes a reactive gas when exposed to ionizing radiation at which point the reactive gas reacts with material on the mesa sidewalls so as to remove material from the mesa sidewalls;
wherein the mesa sidewalls are exposed to the ionizing radiation;
wherein the platter protects the pattern area from the ionizing radiation when in the first position.

10. The apparatus according to claim 9 , further comprising an ionizing radiation source.

11. A platter for modifying the mesa sidewalls of a template, the platter comprising:
a raised area;
a first region surrounding the raised area region; and
a first gas source connected the first region configured to supply a first gas to the first region; and
wherein the first gas source includes at least one gas port connected to the first region of the platter or at least one liquid well in the first region of the platter.

12. The platter according to claim 11 , further comprises channel structures which provides resistance to the flow of the first gas away from the center of the platter.

13. The platter according to claim 11 , further comprises a second set of one or more gas ports configured to supply a second gas different from the first gas, to the raised area.

14. The platter according to claim 13 , further comprises channels in the raised area that are connected to the second set of one or more gas ports which guide the second gas towards edges of the raised area.

Assignees

• Canon Kk

Inventors

• Fletcher Edward Brian

Classifications

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B29C33/44

  with means for, or specially constructed to facilitate, the removal of articles, e.g. of undercut articles · CPC title

• B29C37/0067

  Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other (separating agents B29C33/60) · CPC title

• B29C2037/906

  using visualisation means or linked accessories, e.g. screens, printers · CPC title

• B29C33/46

  using fluid pressure · CPC title