Cleaning solution and method for cleaning substrate

US10920179B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10920179-B2
Application numberUS-201716348063-A
CountryUS
Kind codeB2
Filing dateOct 24, 2017
Priority dateNov 10, 2016
Publication dateFeb 16, 2021
Grant dateFeb 16, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A cleaning solution that is used, inter alia, for removal of residue of a photoresist pattern or etching residue, and has exceptional anticorrosion properties with respect to silicon nitride; and a method for cleaning a substrate using the cleaning solution. In a cleaning solution containing a hydrofluoric acid and a solvent, a polymer that includes units derived from a compound of a specific structure having a carboxylic acid amide bond (—CO—N<) and an unsaturated double bond is blended as an anticorrosive agent. Polyvinylpyrrolidone is preferred as the polymer used as the anticorrosive agent.

First claim

Opening claim text (preview).

The invention claimed is: 1. A cleaning solution comprising hydrofluoric acid (A), a corrosion inhibitor (B) and a solvent (S), wherein the corrosion inhibitor comprises a polymer comprising one or more units represented by the following formula (b1) or formula (b2): wherein in the formula (b1), R b1 and R b2 are each independently a hydrogen atom or a hydrocarbon group having 1 or more 6 or less carbon atoms, and R b1 and R b2 are optionally bound to each other to form a ring, and in the formula (b2), R b3 is a hydrogen atom or a methyl group, and R b4 and R b5 are each independently a hydrogen atom, or a hydrocarbon group having 1 or more 6 or less carbon atoms which is optionally substituted with one or more hydroxy groups, and R b4 and R b5 are optionally bound to each other to form a ring, wherein the cleaning solution does not comprise an amine. 2. The cleaning solution according to claim 1 , wherein the unit represented by the formula (b1) is a unit represented by the following formula (b1-1): wherein p is an integer of 1 or more 10 or less. 3. The cleaning solution according to claim 2 , wherein p is 1. 4. The cleaning solution according to claim 1 , wherein the polymer is polyvinylpyrrolidone. 5. The cleaning solution according to claim 1 , wherein a mass average molecular weight of the polymer is 1000 or more 2000000 or less. 6. The cleaning solution according to claim 1 , wherein the solvent (S) comprises water. 7. A method for cleaning a substrate comprising contacting the substrate with the cleaning solution according to claim 1 . 8. The method according to claim 7 , wherein the substrate comprises a silicon nitride layer.

Assignees

Inventors

Classifications

  • during, before or after processing of insulating materials · CPC title

  • Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

  • Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

  • C11D7/08Primary

    Acids · CPC title

  • N-Vinyl-pyrrolidone · CPC title

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What does patent US10920179B2 cover?
A cleaning solution that is used, inter alia, for removal of residue of a photoresist pattern or etching residue, and has exceptional anticorrosion properties with respect to silicon nitride; and a method for cleaning a substrate using the cleaning solution. In a cleaning solution containing a hydrofluoric acid and a solvent, a polymer that includes units derived from a compound of a specific s…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification C11D7/08. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 16 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).