Composition for surface treatment
US-2019203027-A1 · Jul 4, 2019 · US
US10920179B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10920179-B2 |
| Application number | US-201716348063-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 24, 2017 |
| Priority date | Nov 10, 2016 |
| Publication date | Feb 16, 2021 |
| Grant date | Feb 16, 2021 |
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A cleaning solution that is used, inter alia, for removal of residue of a photoresist pattern or etching residue, and has exceptional anticorrosion properties with respect to silicon nitride; and a method for cleaning a substrate using the cleaning solution. In a cleaning solution containing a hydrofluoric acid and a solvent, a polymer that includes units derived from a compound of a specific structure having a carboxylic acid amide bond (—CO—N<) and an unsaturated double bond is blended as an anticorrosive agent. Polyvinylpyrrolidone is preferred as the polymer used as the anticorrosive agent.
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The invention claimed is: 1. A cleaning solution comprising hydrofluoric acid (A), a corrosion inhibitor (B) and a solvent (S), wherein the corrosion inhibitor comprises a polymer comprising one or more units represented by the following formula (b1) or formula (b2): wherein in the formula (b1), R b1 and R b2 are each independently a hydrogen atom or a hydrocarbon group having 1 or more 6 or less carbon atoms, and R b1 and R b2 are optionally bound to each other to form a ring, and in the formula (b2), R b3 is a hydrogen atom or a methyl group, and R b4 and R b5 are each independently a hydrogen atom, or a hydrocarbon group having 1 or more 6 or less carbon atoms which is optionally substituted with one or more hydroxy groups, and R b4 and R b5 are optionally bound to each other to form a ring, wherein the cleaning solution does not comprise an amine. 2. The cleaning solution according to claim 1 , wherein the unit represented by the formula (b1) is a unit represented by the following formula (b1-1): wherein p is an integer of 1 or more 10 or less. 3. The cleaning solution according to claim 2 , wherein p is 1. 4. The cleaning solution according to claim 1 , wherein the polymer is polyvinylpyrrolidone. 5. The cleaning solution according to claim 1 , wherein a mass average molecular weight of the polymer is 1000 or more 2000000 or less. 6. The cleaning solution according to claim 1 , wherein the solvent (S) comprises water. 7. A method for cleaning a substrate comprising contacting the substrate with the cleaning solution according to claim 1 . 8. The method according to claim 7 , wherein the substrate comprises a silicon nitride layer.
during, before or after processing of insulating materials · CPC title
Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Acids · CPC title
N-Vinyl-pyrrolidone · CPC title
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