Self-stopping polishing composition and method for bulk oxide planarization

Patent metadata

Field	Value
Publication number	US-10920107-B2
Application number	US-202016797438-A
Country	US
Kind code	B2
Filing date	Feb 21, 2020
Priority date	Jul 13, 2015
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) a ceria abrasive,
(b) less than about 1000 ppm of picolinic acid,
(c) a self-stopping agent selected from a compound of formula (I):

wherein R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted:
(d) a cationic polymer, wherein the cationic polymer is selected from, 2-(dimethylamino)ethyl methacrylate, diallyldimethylammonium, poly(vinylimidazolium), poly(methacryloyloxyethyltnmethylammonium) halide, poly(diallyldimethylammonium) chloride, polyquaternium-2, Polyquatemium-11, Polyquatemium-16, Polyquatemium-46, Polyquatemium-44, Luviquat Supreme, Luviquat Hold, Luviquat UltraCare, Luviquat FC 370, Luviquat FC 550, Luviquat FC 552, Luviquat Excellence, and combinations thereof, and
(e) an aqueous carrier,

wherein the polishing composition has a pH of about 6 to about 9.

2. The polishing composition of claim 1 , wherein the self-stopping agent is selected from hydroxamic acid, acetohydroxamic acid benzhydroxamic acid, salicylhydroxamic acid and combinations thereof.

3. The polishing composition of claim 1 , wherein the self-stopping agent is present in the polishing composition at a concentration of about 1 wt. % or less.

4. The polishing composition of claim 1 , wherein the ceria abrasive is present in the polishing composition at a concentration of about 0.001 wt. % to about 5 wt. %.

5. The polishing composition of claim 1 , wherein the ceria abrasive is present in the polishing composition at a concentration of about 0.05 wt. % to about 2 wt. %.

6. The polishing composition of claim 1 , wherein the median particle size of the ceria abrasive is about 40 nm to about 100 nm.

7. The polishing composition of claim 1 , wherein the cationic polymer is poly(methacryloyloxyethyltrimethylammonium) halide.

8. A method of chemically-mechanically polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a pattern dielectric layer on a surface of the substrate,
(ii) providing a polishing pad,
(iii) providing the chemical-mechanical polishing composition comprising:
(a) a ceria abrasive,
(b) less than about 1000 ppm of picolinic acid,
(c) a self-stopping agent selected from a compound of formula (I):

wherein R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted;
(d) a cationic polymer, wherein the cationic polymer is selected from, 2-(dimethylamino)ethyl methacrylate, diallyldimethylammonium, poly(vinylimidazolium), poly(methacryloyloxyethyltrimethylammonium) halide, poly(diallyldimethylammonium) chloride, polyquatemium-2, Polyquaternium-11, Polyquaternium-16, Polyquaternium-46, Polyquatemium-44, Luviquat Supreme, Luviquat Hold, Luviquat UltraCare, Luviquat FC 370, Luviquat FC 550, Luviquat FC 552, Luviquat Excellence, and combinations thereof, and
(e) an aqueous carrier,
wherein the polishing composition has a pH of about 6 to about 9, and
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the pattern dielectric layer on a surface of the substrate to polish the substrate.

9. The method of claim 8 , wherein the self-stopping agent is selected from hydroxamic acid, acetohydroxamic acid benzhydroxamic acid, salicylhydroxamic acid and combinations thereof.

10. The method of claim 8 , wherein the self-stopping agent is present in the polishing composition at a concentration of about 1 wt. % or less.

11. The method of claim 8 , wherein the ceria abrasive is present in the polishing composition at a concentration of about 0.001 wt. % to about 5 wt./.

12. The method of claim 8 , wherein the ceria abrasive is present in the polishing composition at a concentration of about 0.05 wt. % to about 2 wt. %.

13. The method of claim 8 , wherein the median particle size of the ceria abrasive is about 40 nm to about 100 nm.

14. The method of claim 8 , wherein the cationic polymer is poly(methacryloyloxyethyltrimethylammonium) halide.

Assignees

• Cabot Microelectronics Corp
• Cmc Mat Inc

Inventors

• Hains Alexander W
• Chang Juyeon
• Li Tina C
• Lam Viet
• Cui Ji
• Brosnan Sarah
• Nam Chul Woo

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10W10/011

  of isolation regions comprising dielectric materials · CPC title

• H10W10/10

  Isolation regions comprising dielectric materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/762

  Electricity · mapped topic