Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

Patent metadata

Field	Value
Publication number	US-10920087-B2
Application number	US-201716098728-A
Country	US
Kind code	B2
Filing date	Mar 27, 2017
Priority date	Mar 28, 2016
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

First claim

What is claimed is:

1. A hydrogenated isotopically enriched boron trifluoride (BF 3 ) dopant source gas composition, said composition consisting of (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B), and (ii) hydrogen in an amount of from 4 to 6.5 vol. %, based on total volume of boron trifluoride and hydrogen in the composition.

2. The composition of claim 1 , wherein the boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B) is isotopically enriched above an enrichment level selected from the group consisting of 80.1%, 85%, 88%, 90%, 95%, 96%, 97%, 98%, 99%, 99.5%, 99.9%, 99.99%, 99.995%, and 99.999%.

3. The composition of claim 1 , wherein the boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B) is isotopically enriched above 99%.

4. The composition of claim 1 , wherein hydrogen is present in an amount of from 4 to 6 vol. %, based on total volume of boron trifluoride and hydrogen in said composition.

5. The composition of claim 1 , wherein hydrogen is present in an amount of 5 vol. %, based on total volume of boron trifluoride and hydrogen in said composition.

6. A hydrogenated isotopically enriched boron trifluoride (BF 3 ) dopant source gas composition, said composition consisting of (i) boron trifluoride isotopically enriched above 99% in boron of atomic mass 11 ( 11 B), and (ii) hydrogen in an amount of 5 vol. %, based on total volume of boron trifluoride and hydrogen in said composition.

7. A boron dopant gas composition supply package, said package comprising a gas storage and dispensing vessel holding a hydrogenated isotopically enriched boron trifluoride (BF 3 ) dopant source gas composition according to claim 1 .

8. A method of boron on implantation, comprising introducing to an ion source chamber of an ion implantation system a hydrogenated isotopically enriched boron trifluoride (BF 3 ) dopant source gas composition according to claim 1 , and ionizing said hydrogenated isotopically enriched boron trifluoride (BF 3 ) dopant source gas composition in the ion source chamber to generate boron-containing implant species for the boron ion implantation, wherein a beam current of the boron containing implant species is reduced less than 8% when hydrogen is present compared to a beam current of the boron containing implant species when no hydrogen is present in the ion source chamber.

9. The method of claim 8 , further comprising generating a beam of said boron-containing implant species, and directing said beam to a substrate for implantation of the boron-containing implant species therein.

10. The method of claim 8 , comprising exposing a substrate to the boron-containing implant species, for implantation thereof in the substrate.

11. A method of operating an ion implantation system, comprising co-flowing (a) 11 B-isotopically enriched boron trifluoride from a first gas supply package, and (b) hydrogen gas from a second gas supply package, to an ion source chamber of the ion implantation system, at relative rates of the boron trifluoride and hydrogen gases to constitute a dopant source gas composition in the ion source chamber consisting of (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B), and (ii) hydrogen in an amount of from 4 to 6.5 vol. %, based on total volume of boron trifluoride and hydrogen in such composition.

12. A method comprising introducing a boron dopant source gas composition to an ion source chamber of the boron doping ion implantation system, operating the boron doping ion implantation system to ionize the boron dopant source gas composition in the ion source chamber and generate a beam of boron dopant species that is directed to a substrate in the ion implantation system for boron doping of the substrate therein with the boron dopant species, wherein the dopant source gas composition consists of (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B), and (ii) hydrogen in an amount of from 4 to 6.5 vol. %, based on the total volume of boron trifluoride and hydrogen in the composition, wherein a weight change of the cathode during said operating, in relation to other hydrogen concentrations is minimized and beam stability and ion source life is enhanced.

13. The method of claim 12 , wherein the cathode comprises a tungsten filament.

14. The method of claim 12 , wherein said hydrogen concentration in the dopant source gas composition concurrently minimizes change of bias power and filament current during said operating.

15. The method of claim 12 , wherein the boron trifluoride is isotopically enriched above natural abundance in boron of atomic mass 11 ( 11 B) is isotopically enriched above 99%.

16. The method of claim 12 , wherein hydrogen is present in an amount of 5 vol. %, based on total volume of boron trifluoride and hydrogen in said composition.

17. The method of claim 12 , wherein a beam current of a boron ion implant species is reduced less than 8% when compared to a beam current of the boron ion implant species when no hydrogen is present in the ion source chamber.

Assignees

• Entegris Inc

Inventors

• Bishop Steven
• Yedave Sharad N
• Bly Oleg
• Sweeney Joseph
• Tang Ying

Classifications

• C01B35/061 Primary

  Halides · CPC title

• H01J2237/0206

  Extinguishing, preventing or controlling unwanted discharges · CPC title

• H01J37/32412

  Plasma immersion ion implantation · CPC title

• H01J2237/022

  Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title

• H01J37/3244

  Gas supply means · CPC title