Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip

Patent metadata

Field	Value
Publication number	US-10916688-B2
Application number	US-202016900538-A
Country	US
Kind code	B2
Filing date	Jun 12, 2020
Priority date	Oct 13, 2015
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

First claim

The invention claimed is:

1. A light emitting diode, comprising:
a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer;
a first metal layer arranged on at least part of the first semiconductor layer and contact with the first semiconductor layer; and
an electrode layer arranged over the second semiconductor layer, and has a bonding region is available for bonding with a package substrate, wherein the bonding region includes a first bonding region electrically connected to the first semiconductor layer and a second bonding region electrically connected to the second semiconductor layer; and the first metal layer is not overlapped with first bonding region or the second bonding region in a vertical direction.

2. A light emitting diode, comprising:
a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer, wherein the light emitting structure has a portion of defect region arranged in the second semiconductor layer, and extending downward to the first semiconductor layer to expose part of the first semiconductor layer, a first metal layer arranged on the portion of defect region; and
an electrode layer arranged over the second semiconductor layer, and has a bonding region is available for bonding with a package substrate, wherein the bonding region includes a first bonding region electrically connected to the first semiconductor layer and a second bonding region electrically connected to the second semiconductor layer, and the portion of defect region is not overlapped with the first bonding region or the second bonding region in a vertical direction.

3. The light emitting diode of claim 2 , wherein the light emitting structure has a surface distal from the first semiconductor layer in vertical direction which having a first region and a second region, the first bonding region of a second electrode layer is arranged on the first region, the second bonding region of the second electrode layer is arranged on the second region.

4. The light emitting diode of claim 3 , further comprising a second metal layer arranged on the second semiconductor layer having one part corresponding to the first region of the surface and an extension portion extending from the second region of the surface to the first region of the surface, and the extension portion is not overlapped with the first bonding region of the second electrode layer in vertical direction.

5. The light emitting diode of claim 3 , further comprising a first metal layer having one part arranged on the first semiconductor layer corresponding to the first region of the surface and an extension portion extending from the first region of the surface to the second region of the surface, and the extension portion is not overlapped with the second bonding region of the second electrode layer in vertical direction.

6. The light emitting diode of claim 3 , further comprising a first metal layer arranged on the portion of defect region, which having one part corresponding to the first region of the surface, and another part corresponding to the second region of the surface.

7. The light emitting diode of claim 3 , further comprising a second metal layer arranged on the second semiconductor layer having one part is corresponding to the first region of the surface, but is not overlapped with first the bonding region of the second electrode layer in vertical direction.

8. The light emitting diode of claim 7 , wherein the second metal layer has another one part corresponding to the second region of the surface, but is not overlapped with the second bonding region of the second electrode layer in the vertical direction.

9. A light emitting diode, comprising:
a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer;
a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and
an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer,
wherein:
the first electrode layer is electrically coupled to the first semiconductor layer and the second semiconductor layer;
the second electrode layer is configured for bonding with a package substrate, and includes a first bonding region and a second bonding region;
the first bonding region is electrically coupled to the first semiconductor layer;
the second bonding region is electrically coupled to the second semiconductor layer; and
the first metal layer is not overlapped with the first bonding region or the second bonding region in a vertical direction.

10. The light emitting diode of claim 9 , wherein the second metal layer is not overlapped with the first bonding region or the second bonding region in the vertical direction.

11. The light emitting diode of claim 9 , further comprising a second metal layer arranged on at least of the second semiconductor layer and contact the second semiconductor layer.

12. The light emitting diode of claim 9 , wherein the light emitting structure has a portion of defect region arranged in the second semiconductor layer, and extending downward to the first semiconductor layer to expose part of the first semiconductor layer, the first metal layer arranged on the portion of defect region.

13. The light emitting diode of claim 12 , wherein the portion of defect region is not overlapped with the first bonding region or the second bonding region in the vertical direction.

14. The light emitting diode of claim 9 , wherein the light emitting structure has a surface distal from the first semiconductor layer in a vertical direction and having a first region and a second region, the first bonding region of the second electrode layer is arranged on the first region, the second bonding region of the second electrode layer is arranged on the second region.

15. The light emitting diode of claim 14 , wherein the first metal layer having one part arranged on the first semiconductor layer corresponding to the first region of the surface and an extension portion extending from the first region of the surface to the second region of the surface, and the extension portion is not overlapped with the second bonding region of the second electrode layer in the vertical direction.

16. The light emitting diode of claim 14 , wherein, further comprising a second metal layer arranged on the second semiconductor layer having one part corresponding to the first region of the surface and an extension portion extending from the second region of the surface to the first region of the surface, and the extension portion is not overlapped with the first bonding region of the second electrode layer in the vertical direction.

17. The light emitting diode of claim 14 , further comprising a second metal layer arranged on the second semiconductor layer having one part is corresponding to the first region of the surface, but is not overlapped with first the bonding region of the second electrode layer in the vertical direction.

18. The light emitting diode of claim 17 , wherein the second metal layer has another one part corresponding to the second region of the surface, but is not ov

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• He Anhe
• Lin Suhui
• Zheng Jiansen
• Peng Kangwei
• Lin Xiaoxiong
• Hsu Chenke

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W72/07555

  changes in materials · CPC title

• H10W72/07236

  Soldering or alloying · CPC title

• H10W72/5527

  Eutectic alloys · CPC title