Method and solution for forming interconnects

Patent metadata

Field	Value
Publication number	US-10914008-B2
Application number	US-201916586483-A
Country	US
Kind code	B2
Filing date	Sep 27, 2019
Priority date	Sep 27, 2018
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal is described. The solution includes a ruthenium (II) amine complex having a first oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

First claim

What is claimed is:

1. An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal, comprising:
a ruthenium (II) amine complex having an oxidation potential, and
a platinum group metal compound having a reduction potential, larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

2. The solution according to claim 1 for depositing rhodium wherein the platinum group metal compound is a rhodium compound.

3. The solution according to claim 2 , wherein the ruthenium amine complex is selected from [Ru(NH 3 ) 6 ] 2+ and [Ru(en) 3 ] 2+ wherein en stands for ethylenediamine.

4. The solution according to claim 3 , wherein the platinum group metal compound has a general formula selected from M 1 X, M 2 M 1 X, M 1 X.xH 2 O and M 2 M 1 X.xH 2 O 2 , wherein x is an integer, wherein M 1 is one or more platinum group metal atoms totalizing a positive valency v 1 , M 2 is one or more atoms, one or more functional groups, or a combination thereof, other than M 1 , totalizing a positive valency v 2 , and X is one or more atoms, one or more functional groups, or a combination thereof, totalizing a negative valency equal to −(v 1 +v 2 ).

5. The solution according to claim 1 , further comprising a complexing agent.

6. The solution according to claim 1 , wherein the molar ratio ruthenium (II) amine complex:platinum group metal compound is from 5:1 to 20:1.

7. A method for forming a platinum group metal interconnect during the fabrication of an integrated circuit, comprising the steps of:
providing a substrate comprising:
a semiconductor substrate,
dielectric layer, the dielectric layer having a cavity therein for forming an interconnect, the cavity having a bottom, and
a catalytic layer comprising a conductive material at least on the bottom of the cavity, and

exposing the catalytic layer to an oxygen-free or oxygen poor solution comprising a Ru (II) amine complex having an oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the Ru (II) amine complex.

8. The method according to claim 7 , wherein the solution comprises a Ru (II) amine complex.

9. The method according to claim 7 , wherein exposing the catalytic layer to an oxygen-free or oxygen poor solution comprises:
immersing the substrate having the catalytic layer in a solution comprising the platinum group metal compound, and
gradually adding the Ru (II) amine complex from a solution.

10. The method according to claim 7 , wherein the oxygen-free or oxygen-poor solution used in step b is obtained by a method comprising a step of generating electrochemically the Ru(II) amine complex by reduction from a Ru(III) amine complex.

11. The method according to any one of claim 7 , wherein the cavity is a via, a trench, or a combination of both.

12. The method according to claim 7 , wherein the platinum group metal interconnect is formed directly after the front-end of line of the fabrication of the integrated circuit.

13. The method according to claim 7 , wherein the catalytic layer comprises a platinum group metal such as rhodium.

14. The method according to claim 7 wherein providing a substrate comprises:
providing a semiconductor substrate,
providing a dielectric layer above the semiconductor substrate, the dielectric layer comprising a cavity, and
depositing a catalytic layer comprising a conductive material at least on the bottom of the cavity.

15. A method of electroless deposition of a platinum group metal, comprising the steps of:
using a ruthenium (II) amine complex for the electroless deposition of a platinum group metal.

16. The method according to claim 15 , wherein using a ruthenium (II) amine complex for the electroless deposition of a platinum group metal comprises using a ruthenium (II) amine complex for forming a platinum group metal interconnect during the fabrication of an integrated circuit.

17. The method according to claim 16 , further comprising depositing the platinum group metal with a thickness of 1 to 40 nm.

18. The method according to claim 17 , wherein the thickness is 5 to 10 nm.

19. The method according to claim 15 , wherein the platinum group metal comprises:
a ruthenium (II) amine complex having an oxidation potential.

20. The method according to claim 19 , wherein the platinum group metal comprises:
a platinum group metal compound having a reduction potential, larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

Assignees

• Imec Vzw

Inventors

• Philipsen Henricus

Classifications

• H10P14/46

  using a liquid · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4432

  the principal metal being a noble metal, e.g. gold · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title