Block copolymers with high flory-huggins interaction parameters for block copolymer lithography

Patent metadata

Field	Value
Publication number	US-10913873-B2
Application number	US-201715404775-A
Country	US
Kind code	B2
Filing date	Jan 12, 2017
Priority date	Oct 8, 2013
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

Block copolymers for use in block copolymer lithography, self-assembled films of the block copolymers and methods for polymerizing the block copolymers are provided. The block copolymers are characterized by high Flory-Huggins interaction parameters (χ). The block copolymers can be polymerized from protected hydroxystyrene monomers or from tert-butyl styrene and 2-vinylpyridine monomers.

First claim

What is claimed is:

1. A method of transferring a pattern into a substrate using a PtBuSt-b-P2VP block copolymer, the method comprising:
depositing the PtBuSt-b-P2VP block copolymer over the substrate and subjecting the PtBuSt-b-P2VP block copolymer to conditions that induce it to self-assemble into a plurality of domains;
selectively removing some of the domains, such that the self-assembled PtBuSt-b-P2VP block copolymer layer defines a pattern over the substrate; and
transferring the pattern into the substrate to provide a patterned substrate.

2. The method of claim 1 , wherein the plurality of domains includes domains having at least one dimension that is no greater than 100 nm.

3. The method of claim 1 , wherein the plurality of domains includes domains having at least one dimension that is no greater than 20 nm.

4. The method of claim 1 , wherein the plurality of domains includes domains having at least one dimension that is no greater than 10 nm.

5. The method of claim 4 , wherein the plurality of domains comprises cylinders.

6. The method of claim 1 , wherein the plurality of domains comprises cylinders.

7. The method of claim 6 , wherein the cylinders have diameters of no greater than 100 nm.

8. The method of claim 6 , wherein the cylinders are oriented perpendicular with respect to a surface of the substrate.

9. The method of claim 6 , wherein the cylinders are oriented parallel with respect to a surface of the substrate.

10. The method of claim 1 , wherein the plurality of domains comprises lamellae oriented perpendicular with respect to a surface of the substrate.

11. The method of claim 10 , wherein the lamellae have a thickness of no greater than 100 nm.

12. The method of claim 1 , wherein the volume fraction of P2VP in the block copolymer is in the range from 0.19 to 0.69.

13. The method of claim 1 , wherein transferring the pattern into the substrate to provide a patterned substrate comprises selectively chemically modifying exposed regions of the substrate surface.

14. The method of claim 1 , wherein transferring the pattern into the substrate to provide a patterned substrate comprises selectively removing exposed regions of the substrate surface.

15. The method of claim 1 , wherein transferring the pattern into the substrate to provide a patterned substrate comprises selectively coating exposed regions of the substrate surface.

16. The method of claim 1 , wherein selectively removing some of the domains, such that the self-assembled PtBuSt-b-P2VP block copolymer layer defines a pattern over the substrate comprises seeding the P2VP blocks of the block copolymer with a metal and then etching the P2VP.

Assignees

• Wisconsin Alumni Res Found

Inventors

• Gopalan Padma
• Sweat Daniel Patrick
• Yu Xiang
• Kim Myungwoong

Classifications

• C09D153/00 Primary

  Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

• C08F297/02

  using a catalyst of the anionic type · CPC title

• Y10T428/268

  Monolayer with structurally defined element · CPC title

• C08F297/026

  polymerising acrylic acid, methacrylic acid or derivatives thereof · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title