Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof

Patent metadata

Field	Value
Publication number	US-10910127-B2
Application number	US-201916502590-A
Country	US
Kind code	B2
Filing date	Jul 3, 2019
Priority date	Nov 6, 2014
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.

First claim

The invention claimed is:

1. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein the percentage of orientation along the [110] diamond lattice direction is for the nucleation side.

2. The polycrystalline diamond film of claim 1 , wherein:
a percentage of twinning of the diamond crystallites is ≥ 20% of the total number of diamond crystallites forming the polycrystalline diamond film.

3. The polycrystalline diamond film of claim 1 , wherein:
the diamond crystallites twin around the [110] diamond lattice direction; and
a percentage of twinning of the diamond crystallites is ≥20% of the total number of diamond crystallites forming the polycrystalline diamond film.

4. The polycrystalline diamond film of claim 1 , wherein the polycrystalline diamond film is doped with at least one other element.

5. The polycrystalline diamond film of claim 4 , wherein the at least one other element includes one or more of the following: boron, nitrogen, and oxygen.

6. The polycrystalline diamond film of claim 1 , wherein the polycrystalline diamond film has a diameter≥120 mm.

7. The polycrystalline diamond film of claim 1 , wherein the polycrystalline diamond film has a thickness≥200 microns.

8. The polycrystalline diamond film of claim 1 , wherein the polycrystalline diamond film has a total cracking length≤500 mm.

9. The polycrystalline diamond film of claim 1 , wherein the polycrystalline diamond film is grown at a pressure (P) 100 torr<P≤350 torr in the presence of a gas mixture of gaseous hydrogen (H) and a gaseous hydrocarbon (GH) and a temperature (T) 1000° C.≤T≤1300° C. at the center of the growing diamond film.

10. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein a percentage of diamond crystallites that have a [111] orientation at an angle of 35.3° from a plane of the growth surface is ≥40% of the total number of diamond crystallites forming the polycrystalline diamond film.

11. A free standing CVD grown polycrystalline diamond firm having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein a percentage of diamond crystallites that have a [100] orientation at an angle of 45° from a plane of the growth surface is ≥25% of the total number of diamond crystallites forming the polycrystalline diamond film.

12. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein a percentage of diamond crystallites that have a combined [100]&[331] orientation at an angle of 45° from a plane of the growth surface is ≥50% of the total number of diamond crystallites forming the polycrystalline diamond film.

13. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein the polycrystalline diamond film has a standard deviation in thickness of <9%.

14. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein the polycrystalline diamond film has an average surface roughness (Ra) less than 61 angstroms.

15. A free standing CVD grown polycrystalline diamond film having a thickness ≥100 microns comprising diamond crystallites having a percentage of orientation along a [110] diamond lattice direction ≥70% of the total number of diamond crystallites forming the polycrystalline diamond film, wherein the polycrystalline diamond film has a Peak-to-Valley Ratio (PV) less than 13,500 angstroms.

Assignees

• Ii Vi Delaware Inc

Inventors

• Xu Wen-Qing
• Liu Chao
• Kraisinger Charles J
• Tanner Charles D
• Currier Ian
• Sabens David
• Eissler Elgin E
• Anderson Thomas E

Classifications

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/274 Primary

  using microwave discharges · CPC title

• C01B32/25

  Diamond · CPC title

• C23C16/271

  using hot filaments · CPC title

• H01B1/04 Primary

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title