Method and apparatus for pattern fidelity control

Patent metadata

Field	Value
Publication number	US-10908515-B2
Application number	US-201716468063-A
Country	US
Kind code	B2
Filing date	Nov 28, 2017
Priority date	Dec 23, 2016
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

First claim

The invention claimed is:

1. A method of hotspot evaluation, the method comprising:
obtaining process window data for each of an identified first hotspot and an identified second hotspot, the process window data comprising focus information for each of the first and second hotspots; and
evaluating, by a hardware computer, the focus information of the process window data based on topography data of a substrate, to identify or change a criticality of the first and/or second hotspot.

2. The method of claim 1 , wherein the evaluating comprises evaluating the focus information against a focus distribution across a substrate and wherein the focus distribution or the focus information is offset using the topography data.

3. The method of claim 2 , wherein the focus distribution is obtained from measurements of a plurality of fields or die located across a substrate.

4. The method of claim 2 , wherein the evaluating comprises a relative consideration between the overlap or non-overlap of the focus distribution with the focus information of the first hotspot and the overlap or non-overlap of the focus distribution with the focus information of the second hotspot.

5. The method of claim 1 , wherein the evaluating comprising adjusting a ranking of the criticality of the first hotspot relative to that of the second hotspot.

6. The method of claim 1 , wherein the process window data is obtained by computational lithography modelling.

7. The method of claim 1 , wherein the focus information at a negative defocus extremity or a positive defocus extremity of the process window data is evaluated to identify or change a criticality of the first and/or second hotspot.

8. The method of claim 1 , wherein the topography is of a sub-micron or nanometer scale.

9. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtain process window data for each of an identified first hotspot and an identified second hotspot, the process window data comprising focus information for each of the first and second hotspots; and
evaluate the focus information of the process window data based on topography data of a substrate, to identify or change a criticality of the first and/or second hotspot.

10. The computer program product of claim 9 , wherein the instructions configured to cause the computer system to evaluate the focus information are further configured to cause the computer system to evaluate the focus information against a focus distribution across a substrate and wherein the focus distribution or the focus information is offset using the topography data.

11. The computer program product of claim 10 , wherein the focus distribution is obtained from measurements of a plurality of fields or die located across a substrate.

12. The computer program product of claim 10 , wherein the instructions configured to cause the computer system to evaluate the focus information are further configured to cause the computer system to evaluate by a relative consideration between the overlap or non-overlap of the focus distribution with the focus information of the first hotspot and the overlap or non-overlap of the focus distribution with the focus information of the second hotspot.

13. The computer program product of claim 9 , wherein the instructions configured to cause the computer system to evaluate the focus information are further configured to cause the computer system to adjust a ranking of the criticality of the first hotspot relative to that of the second hotspot.

14. The computer program product of claim 9 , wherein the process window data is obtained by computational lithography modelling.

15. The computer program product of claim 9 , wherein the focus information at a negative defocus extremity or a positive defocus extremity of the process window data is evaluated to identify or change a criticality of the first and/or second hotspot.

16. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtain process window data for each of a first feature and a second feature, the process window data comprising focus information for each of the first and second features; and
evaluate the focus information of the process window data against a focus distribution across a substrate, wherein the focus distribution represents a distribution of the number of occurrences of each of various focus values across the substrate and the focus distribution or the focus information is offset using topography data of a substrate, to identify the first and/or second feature as a critical hotspot or to change a criticality of the first and/or second features as a hotspot.

17. The computer program product of claim 16 , wherein the focus distribution is obtained from measurements of a plurality of fields or die located across a substrate.

18. The computer program product of claim 16 , wherein the instructions configured to cause the computer system to evaluate the focus information are further configured to cause the computer system to evaluate by a relative consideration between the overlap or non-overlap of the focus distribution with the focus information of the first feature and the overlap or non-overlap of the focus distribution with the focus information of the second feature.

19. The computer program product of claim 16 , wherein the instructions configured to cause the computer system to evaluate the focus information are further configured to cause the computer system to adjust a ranking of a criticality of the first feature as a hotspot relative to that of the second feature as a hotspot.

20. The computer program product of claim 16 , wherein the focus information at a negative defocus extremity or a positive defocus extremity of the process window data is evaluated to identify the first and/or second feature as a critical hotspot or to change a criticality of the first and/or second features as a hotspot.

Assignees

• Asml Netherlands Bv

Inventors

• Hasan Tanbir
• Jain Vivek Kumar
• Hunsche Stefan
• La Fontaine Bruno

Classifications

• G03F9/7026

  Focusing · CPC title

• G03F7/70775

  Position control, e.g. interferometers or encoders for determining the stage position · CPC title

• G03F7/70683

  Mark designs · CPC title

• G03F7/7065

  Defects, e.g. optical inspection of patterned layer for defects · CPC title

• G03F7/70641 Primary

  Focus · CPC title