Deposition of a coating on an interconnect for solid oxide cell stacks

US10907254B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10907254-B2
Application numberUS-201716466924-A
CountryUS
Kind codeB2
Filing dateNov 22, 2017
Priority dateDec 16, 2016
Publication dateFeb 2, 2021
Grant dateFeb 2, 2021

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-exchange plating. This way, a metallic copper-cobalt coating is formed on the interconnect.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for coating an interconnect for a solid oxide cell (SOC) stack, said method comprising: providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating a second layer of metallic cobalt over the first metallic layer by electrodeposition, and coating a layer of metallic copper over the second layer of metallic cobalt by ion-exchange plating, thereby forming a metallic copper-cobalt coating on the interconnect. 2. The method according to claim 1 , wherein the electrodeposition of the first metallic layer and the second metallic Co layer comprises electroplating. 3. The method according to claim 1 , wherein the first metallic layer is either cobalt or nickel. 4. The method according to claim 1 , wherein the thickness of the first metallic layer is between 10 and 2000 nm. 5. The method according to claim 1 , wherein the thickness of the second metallic Co layer is between 0.5 and 10 μm. 6. The method according to claim 1 , wherein a different electrolyte is used for the electrodeposition of the first metallic layer and for the electrodeposition of the second metallic Co layer. 7. The method according to claim 1 , wherein the ion-exchange plating is carried out in an acidic copper electrolyte. 8. The method according to claim 7 , wherein the acidic copper electrolyte comprises 160-230 g/liter CuSO 4 .5H 2 O, 40-100 g/liter H 2 SO 4 , optionally with minor addition of sodium chloride in the range of 30-150 mg/liter. 9. The method according to claim 1 , where the ion-exchange plating is self-limiting. 10. The method according to claim 9 , where the thickness of the metallic copper layer coated over the second layer of metallic cobalt is between 10 and 1000 nm.

Assignees

Inventors

Classifications

  • High-temperature cells with solid electrolytes · CPC title

  • Fuel cells · CPC title

  • H01M8/0208Primary

    Alloys · CPC title

  • C23C18/54Primary

    Contact plating, i.e. electroless electrochemical plating · CPC title

  • Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10) · CPC title

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What does patent US10907254B2 cover?
A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-excha…
Who is the assignee on this patent?
Haldor Topsoe As
What technology area does this patent fall under?
Primary CPC classification H01M8/0208. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 02 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).