High throughput semiconductor deposition system
US-10192740-B2 · Jan 29, 2019 · US
Hydride enhanced growth rates in hydride vapor phase epitaxy
US10903389B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10903389-B2 |
| Application number | US-201916248309-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 15, 2019 |
| Priority date | Jan 15, 2018 |
| Publication date | Jan 26, 2021 |
| Grant date | Jan 26, 2021 |
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- Title
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Abstract
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Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).
First claim
Opening claim text (preview).
What is claimed is: 1. A method for growing at least one layer of a semiconductor device using a reactor comprising boats containing group III metals, a group V hydride gas, a low temperature growth region and a high temperature region wherein the method comprises hydride vapor phase epitaxy (HVPE), and heating the group V hydride gas to a temperature of at least 750° C., and growing the at least one layer of a semiconductor device in the low temperature growth region wherein the low temperature growth region is below 650° C.; and wherein the at least one layer of a semiconductor device is a single-junction GaAs solar cell having an efficiency of 25% or greater. 2. The method of claim 1 wherein the at least one layer of a semiconductor device is grown at a rate of greater than 300 μm/h at a pressure of 1 atm. 3. The method of claim 1 wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than 0.4V. 4. The method of claim 1 wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than 0.33V. 5. A method for growing at least one layer of a semiconductor device using a reactor comprising boats containing group III metals, a group V hydride gas, a low temperature growth region and a high temperature region wherein the method comprises hydride vapor phase epitaxy (HVPE), and heating the group V hydride gas to a temperature of at least 750° C., and growing the at least one layer of a semiconductor device in the low temperature growth region wherein the low temperature growth region is below 650° C.; and wherein the at least one layer of a semiconductor device has a EL2 trap density of less than 0.4×10 15 cm −3 at growth rates up to 320 μm/h. 6. The method of claim 5 wherein the at least one layer of a semiconductor device is grown at a rate of greater than 300 μm/h at a pressure of 1 atm. 7. The method of claim 5 wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than 0.4V. 8. The method of claim 5 wherein the at least one layer of a semiconductor device has a band gap voltage offset (W OC ) of less than 0.33V. 9. The method of claim 5 wherein the at least one layer of a semiconductor device is a single-junction GaAs solar cell having an efficiency of 25% or greater.
Assignees
Inventors
Classifications
comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title
The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title
- H10F71/1272Primary
comprising at least three elements, e.g. GaAlAs or InGaAsP · CPC title
Controlling or regulating (controlling or regulating in general G05) · CPC title
Reaction chambers; Selection of materials therefor · CPC title
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Frequently asked questions
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- What does patent US10903389B2 cover?
- Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).
- Who is the assignee on this patent?
- Alliance Sustainable Energy
- What technology area does this patent fall under?
- Primary CPC classification H10F71/1272. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 26 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).