Method for producing group iii nitride crystal, group iii nitride crystal, semiconductor device and apparatus for producing group iii nitride crystal

Patent metadata

Field	Value
Publication number	US-2016268129-A1
Application number	US-201415028341-A
Country	US
Kind code	A1
Filing date	Oct 8, 2014
Priority date	Oct 9, 2013
Publication date	Sep 15, 2016
Grant date	—

Abstract

The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

First claim

1 . A method of producing a Group III nitride crystal, the method comprising a step of:
causing a Group III metal to react with an oxidizing agent and nitrogen-containing gas, thereby producing a Group III nitride crystal.

2 . The method according to claim 1 , wherein the Group III metal is gallium.

3 . The method according to claim 1 , wherein the step of producing a Group III nitride crystal comprises steps of:
causing the Group III metal to react with the oxidizing agent, thereby generating Group III metal oxidation product gas; and causing the Group III metal oxidation product gas to react with the nitrogen-containing gas, thereby generating the Group III nitride crystal.

4 . The method according to claim 3 , where in the step of generating Group III metal oxidation product gas, the Group III metal is caused to react with the oxidizing agent in a heated state.

5 . The method according to claim 3 , wherein the Group III metal oxidation product gas is Group III metal oxide gas.

6 . The method according to claim 5 , wherein the Group III metal is gallium and the Group III metal oxide gas is Ga 2 O gas.

7 . The method according to claim 1 , wherein the oxidizing agent is an oxygen-containing compound.

8 . The method according to claim 1 , wherein the oxidizing agent is oxidizing gas.

9 . The method according to claim 8 , wherein the oxidizing gas is at least one selected from the group consisting of H 2 O gas, O 2 gas, CO 2 gas, and CO gas.

10 . The method according to claim 8 , wherein the oxidizing gas is H 2 O gas.

11 . The method according to claim 1 , wherein the nitrogen-containing gas is at least one selected from the group consisting of N 2 , NH 3 , hydrazine gas, and alkylamine gas.

12 . The method according to claim 8 , wherein the oxidizing gas has a volume in a range from 0.001% to 60% with respect to a total volume of the oxidizing gas and the nitrogen-containing gas.

13 . The method according to claim 1 , where in the step of producing a Group III nitride crystal, a reaction is performed in the presence of reducing gas in a reaction system.

14 . The method according to claim 13 , wherein the reducing gas is hydrogen-containing gas.

15 . The method according to claim 14 , wherein the reducing gas is at least one selected from the group consisting of H 2 gas, carbon monoxide (CO) gas, hydrocarbon gas, H 2 S gas, SO 2 gas, and NH 3 gas.

16 . The method according to claim 15 , wherein the hydrocarbon gas is at least one of methane gas and ethane gas.

17 . The method according to claim 13 , wherein the oxidizing agent is the oxidizing gas according to any one of claims 8 to 10 , and the oxidizing gas is mixed with the reducing gas.

18 . The method according to claim 13 , wherein the nitrogen-containing gas is mixed with the reducing gas.

19 . The method according to claim 13 , wherein a reaction in the presence of the reducing gas is performed at a temperature of 650° C. or higher.

20 . The method according to claim 1 , wherein the Group III nitride crystal is generated on a substrate.

21 . The method according to claim 20 , wherein the substrate comprises an underlayer and a seed crystal disposed on the underlayer.

22 . The method according to claim 1 , wherein the Group III nitride crystal is generated in a condition under pressure.

23 . The method according to claim 1 , where in the step of producing a Group III nitride crystal, the Group III nitride crystal has a growth rate of 100 μm/h or more.

24 . The method according to claim 1 , further comprising a step of:
slicing the Group III nitride crystal to provide at least one Group III nitride crystal substrate.

25 . The method according to claim 24 , further comprising a step of:
again producing a Group III nitride crystal with the Group III nitride crystal substrate obtained in the step of slicing as a seed crystal, where in the step of again producing a Group III nitride crystal, the Group III nitride crystal is generated on the Group III nitride crystal substrate.

26 . A Group III nitride crystal produced by the method according to claim 1 .

27 . The Group III nitride crystal according to claim 26 , wherein the Group III nitride crystal has a dislocation density of 1×10 7 /cm 2 or less.

28 . The Group III nitride crystal according to claim 26 , wherein a half width of each of a symmetric reflection component (002) and an asymmetric reflection component (102) by XRC (X-ray rocking curve method) is 300 seconds or less.

29 . A semiconductor apparatus, comprising:
the Group III nitride crystal according to claim 26 , wherein the Group III nitride crystal is a semiconductor.

30 . An apparatus for producing a Group III nitride crystal used in the method according to claim 1 , the apparatus comprising:
a reaction vessel; a Group III metal supply unit; an oxidizing agent supply unit; and a nitrogen-containing gas supply unit, wherein the Group III metal supply unit is configured to continuously supply the Group III metal into the reaction vessel, the oxidizing agent supply unit is configured to continuously supply the oxidizing agent into the reaction vessel, the nitrogen-containing gas supply unit is configured to continuously supply the nitrogen-containing gas into the reaction vessel, and the Group III metal is caused to react with the oxidizing agent and the nitrogen-containing gas in the reaction vessel to produce the Group III nitride crystal.

Assignees

• Univ Osaka
• Itochu Plastics Inc

Inventors

• Mori Yusuke
• Imade Mamoru
• Yoshimura Masashi
• Isemura Masashi

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2901

  Materials · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title