Sensor, microphone, and touch panel

Patent metadata

Field	Value
Publication number	US-10902986-B2
Application number	US-201816119008-A
Country	US
Kind code	B2
Filing date	Aug 31, 2018
Priority date	Mar 1, 2018
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

First claim

What is claimed is:

1. A sensor, comprising:
a film portion, the film portion being deformable; and
a first sensing element provided at the film portion,
the first sensing element including
a first magnetic layer,
a second magnetic layer, and
a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic,

the first magnetic layer including
a first film including Fe and Co,
a second film including Fe and Co,
a third film including at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and being provided between the first film and the second film, and
a fourth film including at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and being provided between the third film and the second film.

2. The sensor according to claim 1 , wherein an electrical resistance of the first sensing element changes according to a deformation of the film portion.

3. The sensor according to claim 1 , wherein a first peak intensity is less than 1.5 times a second peak intensity in an X-ray analysis of the first magnetic layer, the first peak intensity being in a range where an angle 2θ is not less than 43 degrees and not more than 45 degrees, the second peak intensity being in a range where the angle 2θ is not less than 40 degrees and not more than 42 degrees.

4. The sensor according to claim 3 , wherein the first peak intensity is 1.3 times the second peak intensity or less.

5. The sensor according to claim 1 , wherein a first difference is less than 1.5 times a second difference in an X-ray analysis of the first magnetic layer, the first difference being between a maximum value and a minimum value of an intensity in a range where an angle 2θ is not less than 43 degrees and not more than 47 degrees, the second difference being between a maximum value and a minimum value of an intensity in a range where the angle 2θ is not less than 40 degrees and not more than 42 degrees.

6. The sensor according to claim 4 , wherein the first difference is 1.3 times the second difference or less.

7. The sensor according to claim 1 , wherein a thickness of the third film is not less than 0.1 nm and not more than 2 nm.

8. The sensor according to claim 1 , wherein a thickness of the fourth film is not less than 0.1 nm and not more than 2 nm.

9. The sensor according to claim 1 , wherein the fourth film contacts the second film.

10. The sensor according to claim 1 , wherein the third film contacts the first film.

11. The sensor according to claim 1 , wherein the third film contacts the fourth film.

12. The sensor according to claim 1 , wherein a composition ratio of Co of the first film is not less than 20 atm % and not more than 80 atm %.

13. The sensor according to claim 1 , wherein the second film further includes B.

14. The sensor according to claim 1 , wherein a magnetization of the second magnetic layer crosses a first direction from the second film toward the first film.

15. The sensor according to claim 1 , further comprising:
a third magnetic layer including Mn; and
a fourth magnetic layer including Mn,
the second magnetic layer being provided between the third magnetic layer and the first intermediate layer,
the first magnetic layer being provided between the fourth magnetic layer and the first intermediate layer.

16. The sensor according to claim 15 , wherein a difference between a thickness of the third magnetic layer and a thickness of the fourth magnetic layer is 3 nm or more.

17. The sensor according to claim 15 , further comprising a second intermediate layer provided between the first magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic,
the second intermediate layer including at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os.

18. A microphone, comprising the sensor according to claim 1 .

19. A touch panel, comprising the sensor according to claim 1 .

Assignees

• Toshiba Kk

Inventors

• Okamoto Kazuaki
• Fuji Yoshihiko
• Kaji Shiori
• Higashi Yoshihiro
• Nagata Tomohiko
• Baba Shotaro
• Hara Michiko

Classifications

• H10N50/85

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