RF sensing apparatus of plasma processing chamber and plasma processing chamber including same

Patent metadata

Field	Value
Publication number	US-10901007-B2
Application number	US-201916261175-A
Country	US
Kind code	B2
Filing date	Jan 29, 2019
Priority date	Aug 28, 2018
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

First claim

What is claimed is:

1. A Radio Frequency (RF) sensing apparatus of a plasma processing chamber, the RF sensing apparatus comprising:
a penetration unit configured to receive a conducting rod extending through the penetration unit in an up direction or a down direction, wherein a conducting rod current flows through the conducting rod in one of the up direction and the down direction;
a main return path unit at least partially encompassing the penetration unit; and
a secondary return path unit disposed between the penetration unit and the main return path unit, spaced apart from the main return path unit by a separation space, and at least partially surrounding the penetration unit,
wherein the main return path unit and the secondary return path unit form a return current path through which a return current flows in another one of the up direction and the down direction, and
wherein the secondary return path unit comprises an upper conductor plate, a lower conductor plate, and a connection unit electrically connecting a portion of the upper conductor plate and a portion of the lower conductor plate.

2. The RF sensing apparatus of claim 1 , wherein a majority portion of the return current flows through the main return path unit, and a remaining portion of the return current flows through the secondary return path unit.

3. The RF sensing apparatus of claim 2 , wherein the return current is substantially equal in magnitude to the conducting rod current.

4. The RF sensing apparatus of claim 1 , further comprising:
a current sensing unit disposed between the main return path unit and the secondary return path unit; and
a voltage sensing unit disposed between the penetration unit and the secondary return path unit.

5. The RF sensing apparatus of claim 1 , further comprising:
a current sensing unit disposed between the main return path unit and the secondary return path unit; and
a voltage sensing unit disposed between the current sensing unit and the secondary return path unit.

6. The RF sensing apparatus of claim 1 , wherein the secondary return path unit comprises a first secondary return path unit and a second secondary return path unit, and
the RF sensing apparatus further comprises:
a current sensing unit disposed between the main return path unit and the first secondary return path unit; and
a voltage sensing unit disposed between the first secondary return path unit and the second secondary return path unit.

7. The RF sensing apparatus of claim 1 , wherein the connection unit comprises a plurality of columnar conductor holes having at least one size and being separated by at least one spacing distance.

8. The RF sensing apparatus of claim 7 , wherein the plurality of columnar conductor holes includes columnar conductive holes having at least two different shapes.

9. The RF sensing apparatus of claim 7 , wherein the plurality of columnar conductor holes includes columnar conductive holes having at least two different sizes.

10. A Radio Frequency (RF) sensing apparatus of a plasma processing chamber, the RF sensing apparatus comprising:
a conducting rod through which a conducting rod current flows in one direction;
a current return unit that is disposed in the plasma processing chamber and through which a return current flows in another direction opposite to the one direction, that at least partially encompasses the conducting rod, that is physically separated from the conducting rod, and that includes a main return path unit and a secondary return path unit; and
a current sensing unit disposed between the main return path unit and the secondary return path unit,
wherein a remaining portion of the return current flowing in the secondary return path unit is less than a majority of the return current flowing in the main return path unit.

11. The RF sensing apparatus of claim 10 , further comprising a voltage sensing unit disposed between the conducting rod and the secondary return path unit.

12. The RF sensing apparatus of claim 10 , further comprising a voltage sensing unit disposed between the current sensing unit and the secondary return path unit.

13. The RF sensing apparatus of claim 10 , wherein the secondary return path unit comprises a first secondary return path unit and a second secondary return path unit, and the current sensing unit is disposed between the main return path unit and the first secondary return path unit, and
the RF sensing apparatus further comprises a voltage sensing unit disposed between the first secondary return path unit and the second secondary return path unit.

14. The RF sensing apparatus of claim 10 , wherein the secondary return path unit comprises an upper conductor plate, a lower conductor plate, and a connection unit electrically connecting a portion of the upper conductor plate and a portion of the lower conductor plate.

15. A Radio Frequency (RF) sensing apparatus of a plasma processing chamber, the RF sensing apparatus comprising:
a main return path unit having a centrally disposed through-hole in an up direction and a down direction and electrically conducting a measurement current in the up direction or the down direction;
a secondary return path unit spaced apart from an inner side surface of the main return path unit, having a centrally disposed through-hole in the up direction and the down direction, and electrically conducting a return current in the up direction or the down direction; and
a coil-type wiring disposed in a space between the main return path unit and the secondary return path unit.

16. The RF sensing apparatus of claim 15 , wherein the secondary return path unit comprises an upper conductor plate, a lower conductor plate, and a connection unit electrically connecting a portion of the upper conductor plate and a portion of the lower conductor plate to each other.

17. The RF sensing apparatus of claim 15 , wherein a direction of the measurement current flowing through the main return path unit and a direction of the return current flowing through the secondary return path unit are the same, and a magnitude of the return current flowing through the secondary return path unit is less than a magnitude of the measurement current flowing through the main return path unit.

18. The RF sensing apparatus of claim 16 , wherein the connection unit comprises a plurality of columnar conductor holes.

19. The RF sensing apparatus of claim 18 , wherein the plurality of columnar conductor holes includes columnar conductive holes having at least two different shapes, and the plurality of columnar conductor holes includes columnar conductive holes having at least two different sizes.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Young Do
• Lim Sung Yong
• Kang Chan Soo
• Kwon Do Hoon
• Kim Min Ju
• Nam Sang Ki
• Yang Jung Mo
• Pi Jong Hun
• Han Kyu Hee

Classifications

• G01R31/2822

  of microwave or radiofrequency circuits (of attenuation, gain, e.g. using network analyzers G01R27/28) · CPC title

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J37/32935 Primary

  Monitoring and controlling tubes by information coming from the object and/or discharge · CPC title

• H01J37/32917

  Plasma diagnostics · CPC title

• G01R15/165

  measuring electrostatic potential, e.g. with electrostatic voltmeters or electrometers, when the design of the sensor is essential (electrometers with passively moving electrodes G01R5/28; measuring electrostatic fields G01R29/12; measuring charge G01R29/24; measuring in circuits with high internal resistance G01R19/0023) · CPC title