Auto-referenced memory cell read techniques

Patent metadata

Field	Value
Publication number	US-10896727-B2
Application number	US-202016791764-A
Country	US
Kind code	B2
Filing date	Feb 14, 2020
Priority date	Dec 22, 2017
Publication date	Jan 19, 2021
Grant date	Jan 19, 2021

Abstract

Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected. When the number of activated memory cells matches either the predetermined number or the total number, the auto-referenced read may determine that the memory cells that have been activated correspond to the first logic state.

First claim

What is claimed is:

1. A method, comprising:
initializing a counter in a controller coupled with a memory array that comprises a first portion of memory cells and a second portion of memory cells, wherein the second portion of memory cells comprises a plurality of pairs of memory cells, each pair of the plurality of pairs associated with a respective flag value;
activating a first subset of the first portion of memory cells by applying a first read voltage to the memory array;
activating at least one cell of each pair of the plurality of pairs by applying a second read voltage to the memory array;
setting an indicator in the controller based at least in part on the activation of the at least one cell; and
reading one or more memory cells of the first portion of memory cells based at least in part on the indicator.

2. The method of claim 1 , wherein setting the indicator comprises:
toggling the respective flag value of each pair of the plurality of pairs from a first flag value to a second flag value based at least in part on the activation of the at least one cell.

3. The method of claim 1 , further comprising:
determining, based at least in part on a set of values of the second portion of memory cells after activation of the at least one cell, a quantity of memory cells of the first portion having a first logic state;
updating the counter to a first count value based at least in part on activation of the first subset of the first portion of memory cells; and
comparing the first count value to the determined quantity, wherein the one or more memory cells of the first portion of memory cells are read based at least in part on the comparison.

4. The method of claim 3 , further comprising:
comparing the set of values of the second portion of memory cells with a threshold value, after activating the at least one cell of each pair of the plurality of pairs, wherein reading the one or more memory cells of the first portion of memory cells is based at least in part on comparing the set of values of the second portion of memory cells with the threshold value.

5. The method of claim 4 , wherein the set of values are stored in a second quantity of memory cells of the plurality of pairs of the second portion of memory cells, and wherein the threshold value corresponds to a quantity of pairs of the plurality of pairs.

6. The method of claim 4 , wherein comparing the set of values of the second portion of memory cells with the threshold value further comprises:
determining that the set of values of the second portion of memory cells satisfies the threshold value;
ceasing application of the second read voltage based at least in part on the determination that the set of values satisfies the threshold value; and
identifying, after ceasing the application of the second read voltage the quantity of memory cells of the first portion having the first logic state based at least in part on the determination that the set of values satisfies the threshold value, wherein applying the first read voltage to the memory array is based at least in part on identifying the quantity of memory cells of the first portion having the first logic state.

7. The method of claim 4 , wherein the comparing the set of values of the second portion of memory cells with the threshold value further comprises:
determining that the set of values of the second portion of memory cells is below the threshold value;
maintaining application of the second read voltage until the threshold value is satisfied.

8. The method of claim 1 , further comprising:
initializing, by the controller, a second counter;
updating the second counter to a first value based at least in part on the activation of the at least one cell of each pair of the plurality of pairs; and
reading the one or more memory cells of the first portion of memory cells based at least in part on updating the second counter to the first value.

9. The method of claim 8 , wherein the counter and the second counter are initialized simultaneously.

10. The method of claim 1 , wherein the first read voltage and the second read voltage are applied simultaneously.

11. The method of claim 1 , wherein the first read voltage is different than the second read voltage.

12. The method of claim 1 , wherein the first read voltage has a different rate of change than the second read voltage.

13. An apparatus, comprising:
a memory array that comprises a first portion of memory cells and a second portion of memory cells, wherein the second wherein the second portion of memory cells comprises a plurality of pairs of memory cells, each pair of the plurality of pairs associated with a respective flag value; and
a controller coupled with the memory array and operable to cause the apparatus to:
initialize a counter;
activate a first subset of the first portion of memory cells by applying a first read voltage to the memory array;
activate at least one cell of each pair of the plurality of pairs of the second portion of memory cells by applying a second read voltage to the memory array;
set an indicator in the controller based at least in part on activation of the at least one cell of the plurality of pairs of the second portion of memory cells; and
read one or more memory cells of the first portion of memory cells based at least in part on the indicator.

14. The apparatus of claim 13 , wherein the controller is further operable to cause the apparatus to:
toggle the respective flag value of each pair of the plurality of pairs from a first flag value to a second flag value based at least in part on the activation of the at least one cell.

15. The apparatus of claim 13 , wherein the controller is further operable to cause the apparatus to:
determine, based at least in part on a set of values of the second portion of memory cells after activation of the at least one cell, a quantity of memory cells of the first portion having a first logic state;
update the counter to a first count value based at least in part on the activation of the first subset of the first portion of memory cells; and
compare the first count value to the determined quantity of memory cells of the first portion having the first logic state, wherein the one or more memory cells of the first portion of memory cells are read based at least in part on the comparison.

16. The apparatus of claim 15 , wherein the controller is further operable to cause the apparatus to:
compare the set of values of the second portion of memory cells with a threshold value, after activating the at least one cell of each pair of the plurality of pairs, wherein reading the one or more memory cells of the first portion of memory cells is based at least in part on comparing the set of values of the second portion of memory cells with the threshold value.

17. The apparatus of claim 16 , wherein the controller is further operable to cause the apparatus to:
determine that the set of values of the second portion of memory cells satisfies the threshold value;
cease application of the second read voltage based at least in part on the determination that the set of values satisfies the threshold value; and
identify after ceasing application of the second read voltage, from the second portion of memory cells, the quantity of memory cells of the first portion having the first logic state based at least in part on the determination that the set of values satisfies the threshold value, wherein applying the first read voltage to the memory array is based at least in part on identifying the quantity of memory cells of the first por

Assignees

• Micron Technology Inc

Inventors

• Mirichigni Graziano
• Amato Paolo
• Pio Federico
• Orlando Alessandro
• Sforzin Marco

Classifications

• G11C2213/76

  Array using an access device for each cell which being not a transistor and not a diode · CPC title

• G11C2213/72

  Array wherein the access device being a diode · CPC title

• G11C2213/71

  Three dimensional array · CPC title

• G11C2013/0054

  Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell · CPC title

• G11C13/003

  Cell access · CPC title