EUV lithography system for dense line patterning

Patent metadata

Field	Value
Publication number	US-10890849-B2
Application number	US-201715599197-A
Country	US
Kind code	B2
Filing date	May 18, 2017
Priority date	May 19, 2016
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

First claim

The invention claimed is:

1. An exposure apparatus comprising:
a mask having a pattern thereon;
an illumination optical system configured to illuminate said mask with illumination radiation to generate a first beam in a positive order of diffraction of said illumination radiation at said mask and a second beam in a negative order of diffraction of said illumination radiation at said mask;
a projection optical system including
a convex mirror configured to reflect said first beam at a first reflective area of said convex mirror to form a reflected first beam, and to reflect said second beam at a second reflective area of said convex mirror to form a reflected second beam, and
a concave mirror configured to receive and reflect said reflected first beam and said reflected second beam to form respectively third and fourth beams that are propagated between the first and second reflective areas of the convex mirror towards an image plane of the projection optical system and that are overlapped at said image plane.

2. The exposure apparatus according to claim 1 , wherein
the convex mirror is a first reflector encountered by said illumination radiation received from the illumination optical system among a plurality of mirrors of the projection optical system, and
the concave mirror is a last reflector encountered by said illumination radiation upon its propagation through the projection optical system among said plurality of mirrors.

3. The exposure apparatus according to claim 1 ,
configured to transfer said illumination radiation received from the illumination optical system along a path between a first optical path, representing an optical path of the reflected first beam from the convex mirror to the concave mirror, and a second optical path, representing an optical path of the reflected second beam from the convex mirror to the concave mirror.

4. The exposure apparatus according to claim 3 , wherein
the illumination optical system includes a correcting mirror disposed between the first optical path and the second optical path and configured to correct a spatial distribution of the illumination radiation.

5. The exposure apparatus according to claim 4 , wherein the correcting mirror of the illumination optical system includes a fly's eye reflector.

6. The exposure apparatus according to claim 1 ,
wherein the positive order of diffraction represents a +1 order of diffraction, and the negative order of diffraction represents a −1 order of diffraction of said illumination radiation.

7. The exposure apparatus according to claim 1 ,
wherein the pattern includes a one-dimensional line and space pattern.

8. The exposure apparatus according to claim 7 , wherein
the first reflective area and the second reflective area are spatially aligned along a direction of pitch of said one-dimensional line and space pattern.

9. The exposure apparatus according to claim 7 ,
wherein a first size of an exit pupil of the illumination optical system, which is measured along a direction of a pitch of said one-dimensional line and space pattern, is smaller than a second size of said exit pupil, which is measured along a direction that is transverse to said direction of said pitch.

10. The exposure apparatus according to claim 1 ,
wherein an optical path of the first beam from the mask to the convex mirror and an optical path of the reflected first beam cross each other.

11. The exposure apparatus according to claim 10 ,
wherein an optical path of the second beam from the mask to the convex mirror and the optical path of the reflected second beam cross each other.

12. The exposure apparatus according to claim 1 , wherein:
the illumination optical system includes a plurality of illumination mirrors, and
a last illumination mirror from said plurality of illumination mirrors, that is disposed along an optical path of the illumination optical system and that is configured to direct said illumination radiation directly to the mask, is positioned between the convex mirror and the concave mirror.

13. The exposure apparatus according to claim 12 , configured to direct a beam representing a zeroth order of diffraction of the illumination radiation at said mask towards said last illumination mirror.

14. The exposure apparatus according to claim 1 , comprising a member arranged between the convex mirror and the concave mirror and configured such that a beam, representing a zeroth order of diffraction of said illumination radiation at said mask, traverses said member.

15. The exposure apparatus according to claim 1 , further comprising an aperture stop between the convex mirror and the concave mirror.

16. A projection optical system comprising:
a convex mirror configured to reflect a first beam of radiation at a first reflective area of the convex mirror and to reflect a second beam of said radiation at a second reflective area of the convex mirror, to form, respectively, a reflected first beam and a reflected second beam,
wherein the first beam represents a negative order of diffraction of said radiation and the second beam represents a positive order of diffraction of said radiation, and

a concave mirror configured to receive and reflect said reflected first beam and said reflected second beam to form, respectively, third and fourth beam that are spatially overlapped on an image plane of said projection optical system,
wherein said projection optical system is configured to pass said third and fourth beams between said first and second reflective areas.

17. The projection optical system according to claim 16 , comprising a mask carrying a pattern that is configured to form said first beam and said second beam, and
configured such that an optical path of the first beam from the mask to the convex mirror and an optical path of the reflected first beam from the concave mirror to the image plane cross each other.

18. The projection optical system according to claim 17 , configured such that an optical path of the second beam from the mask to the convex mirror and an optical path of reflected second beam from the concave mirror to the image plane cross each other.

Assignees

• Nikon Corp

Inventors

• Flagello Donis G
• Williamson David M
• Renwick Stephen P
• Smith Daniel Gene
• Binnard Michael B

Classifications

• G03F7/70325

  Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses · CPC title

• G03F7/70116

  Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets · CPC title

• G03F7/70075

  Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection · CPC title

• G03F7/70283

  Mask effects on the imaging process · CPC title

• G03F7/70033 Primary

  by plasma extreme ultraviolet [EUV] sources · CPC title