Optical pulse generation for an extreme ultraviolet light source

Patent metadata

Field	Value
Publication number	US-10887975-B2
Application number	US-201916246648-A
Country	US
Kind code	B2
Filing date	Jan 14, 2019
Priority date	Mar 24, 2017
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

First claim

What is claimed is:

1. A method of modifying an acoustic effect in an electro-optic modulator, the method comprising:
applying a voltage to a semiconductor of the electro-optic modulator during a first time period, the application of the voltage generating an acoustic effect in the semiconductor, the acoustic effect comprising an oscillating acoustic wave;
illuminating the semiconductor with a seed light beam, the seed light beam having a wavelength that has a photon energy that is less than a band gap energy of the semiconductor to thereby modify one or more of an amplitude and a frequency of the oscillating acoustic wave; and
illuminating the semiconductor with a second light beam to thereby produce an output light beam from the second light beam, wherein the seed light beam and the second light beam are produced, respectively, by first and second light sources that are distinct,
the electro-optic modulator is configured to modulate the second light beam based on an electro-optic effect, the electro-optic effect comprising a change in the refractive index of the semiconductor based on the application of the voltage, and
illuminating the semiconductor with the seed light beam changes an amount of the second light beam that passes through the electro-optic modulator to thereby produce the output light beam, the output light beam comprising a pre-determined amount of light.

2. The method of claim 1 , wherein the second light beam comprises a continuous wave light beam, and wherein:
a first amount of the continuous wave light beam passes through the electro-optic modulator with a first polarization state during the first time period when the voltage is applied to the semiconductor, and
a second amount of the continuous wave light beam passes through the electro- optic modulator at a time not in the first time period when the voltage is not applied to the semiconductor and the acoustic effect is present in the semiconductor.

3. The method of claim 2 , wherein illuminating the semiconductor with the seed light beam changes the second amount by reducing an average and/or maximum intensity of the second amount of the continuous wave light beam that passes through the electro-optic modulator.

4. The method of claim 2 , wherein the second amount of the light beam of the continuous wave light beam passes through the electro-optic modulator before the first time period.

5. The method of claim 1 , wherein the second light beam comprises a pulsed light beam, a first amount of light of a pulse in the pulsed light beam passes through the semiconductor during the first time period when the voltage is applied to the semiconductor, and a second amount of light of a pulse in the pulsed light beam passes through the semiconductor during a time that is not in the first time period and when the voltage is not applied to the semiconductor.

6. The method of claim 5 , wherein illuminating the semiconductor with the seed light beam changes the second amount of light of the pulse by reducing an average and/or maximum intensity of the second amount of the light of the pulse.

7. The method of claim 5 , wherein the second amount of light passes through the electro-optic modulator before the first time period.

8. The method of claim 1 , wherein
the semiconductor comprises at least one defect that forms a deep-level trap, the deep-level trap having an energy level between a valence band of the semiconductor and a conduction band of the semiconductor, and
the photon energy of the seed light beam is equal to or greater than an energy difference between the energy level of the deep-level trap and the valence band or an energy difference between the energy level of the deep-level trap and the conduction band.

9. The method of claim 1 , wherein illuminating the semiconductor with the seed light beam modifies one or more of the amplitude and the frequency of the oscillating acoustic wave by increasing a spatial uniformity of the applied voltage in the semiconductor.

10. The method of claim 1 , wherein the semiconductor comprises cadmium zinc telluride (CdZnTe), cadmium telluride (CdTe), zinc telluride (ZnTe), gallium arsenide (GaAs), monopotassium phosphate (KDP), ammonium dihydrogen phosphate (ADP), quartz, cuprous chloride (CuCl), zinc sulphide (ZnS), zinc selenide (ZnSe), lithium niobate (LiNbO3), gallium phosphide (GaP), lithium tantalate (LiTaO3), or barium titanate (BaTiO3).

11. The method of claim 1 , wherein the seed light beam comprises light having a wavelength between 0.75 micrometers (μm) and 3.5 μm.

12. The method of claim 5 , wherein the semiconductor is on a beam path between the second optical source that produces the pulsed light beam and a target location that receives a target comprising target material, the target material emitting extreme ultraviolet (EUV) light when in a plasma state, and the pulse comprises an energy sufficient to convert at least some of the target material in the target to plasma.

13. The method of claim 12 , wherein the pulse of the pulsed light beam comprises light having a wavelength between 9 μm and 11 μm.

14. An apparatus comprising:
an electro-optic modulator comprising: a semiconductor material;
a voltage source configured to apply a voltage to the semiconductor material;
a seed light source configured to produce a seed light beam; and
a control system coupled to the electro-optic modulator and the seed light source, the control system configured to:
cause the voltage source to apply a voltage to the semiconductor material, the application of the voltage generating an acoustic effect in the semiconductor, the acoustic effect comprising an oscillating acoustic wave;
cause the seed light source to illuminate the semiconductor material with the seed light beam, the seed light beam having a wavelength that has a photon energy that is less than a band gap energy of the semiconductor to thereby modify one or more of an amplitude and a frequency of the oscillating acoustic wave; and
cause a second light source to illuminate the semiconductor material with a second light beam to thereby produce an output light beam comprising a pre-determined amount of light based on the second light beam, wherein the second light source is distinct from the seed light source, and the amount of light in the output light beam is determined by an amount of light in the seed light beam.

15. The apparatus of claim 14 , further comprising an optical element configured to direct the seed light beam toward the semiconductor material.

16. The apparatus of claim 15 , wherein the optical element is further configured to direct the second light beam toward the semiconductor material.

17. The apparatus of claim 16 , wherein the optical element comprises a dichroic optical element.

18. The apparatus of claim 14 , further comprising an optical element between the seed light source and the semiconductor, wherein the optical element is configured to spatially diffuse the seed light beam or to cause the seed light beam to diverge.

19. The apparatus of claim 14 , wherein the semiconductor material comprises cadmium zinc telluride (CdZnTe), cadmium telluride (CdTe), zinc telluride (ZnTe), gallium arsenide (GaAs), monopotassium phosphate (KDP), ammonium dihydrogen phosphate (ADP), quartz, cuprous chloride (CuCl), zinc sulphide (ZnS), zinc selenide (ZnSe), lithium niobate (LiNbO3), gallium phosphide (GaP), lithium tantalate (LiTaO3), or barium titanate (BaTiO3).

20. The apparatus of claim 14 , wherein the semiconductor material is disposed o

Assignees

• Asml Netherlands Bv

Inventors

• Liebenberg Christoffel Johannes
• Parry Robert William

Classifications

• H05G2/0084 Primary

  Control of the laser beam · CPC title

• G03F7/70041

  by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control · CPC title

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G02F2202/10

  semiconductor · CPC title

• G02F2/02 Primary

  Frequency-changing of light, e.g. by quantum counters · CPC title