Method for doping layer, thin film transistor and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-10886144-B2
Application number	US-201816337959-A
Country	US
Kind code	B2
Filing date	May 18, 2018
Priority date	May 19, 2017
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A method for doping a layer, a thin film transistor and a method for fabricating the thin film transistor. The method comprises: forming a layer to be doped on a substrate by a first patterning process, wherein the layer comprises a first region, a second region and a third region, the first region is arranged in a middle region, the third region is arranged in an edge region, the second region is arranged between the first region and the third region; forming a first blocking layer and a second blocking layer on the layer in this order by a second patterning process, wherein an orthographic projection region of the first blocking layer on the layer exactly covers the first region, and an orthographic projection region of the second blocking layer on the layer exactly covers the first region and the second region; perform a first doping on the layer with an ion beam perpendicular to the substrate, to realize doping of the third region; rotating the substrate by a preset angle in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the layer with the ion beam.

First claim

What is claimed is:

1. A method for doping a layer, comprising:
forming a layer to be doped on a substrate by a first patterning process, wherein the layer comprises a first region, a second region and a third region, the first region is arranged in a middle region of the layer, the third region is arranged in an edge region of the layer, and the second region is arranged between the first region and the third region;
forming a first blocking layer and a second blocking layer for blocking an ion beam on the layer in this order by a second patterning process, wherein an orthographic projection region of the first blocking layer on the layer exactly covers the first region, and an orthographic projection region of the second blocking layer on the layer exactly covers the first region and the second region;
performing a first doping on the layer with an ion beam perpendicular to the substrate, to realize doping of the third region; and
rotating the substrate clockwise by a preset angle A in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the layer with the ion beam, and rotating the substrate counterclockwise by the preset angle A in the direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing the second doping on the layer again with the ion beam to realize doping of the second region,
wherein the preset angle A satisfies tan A=L/(H1+H2), wherein L indicates a length of the second region in a preset direction, H1 indicates a thickness of the layer, and H2 indicates a thickness of the first blocking layer.

2. The doping method of claim 1 , wherein the first blocking layer and the second blocking layer are made from a same material.

3. The doping method of claim 1 , wherein after performing the second doping on the layer with the ion beam, the method further comprises: removing the first blocking layer and the second blocking layer to form a doped layer.

4. The doping method of claim 1 , wherein a dose of doping ion for the second doping smaller is than the first doping.

5. A method for fabricating a thin film transistor, comprising forming a gate, a source electrode, a drain electrode, and a semiconductor active layer, wherein forming the semiconductor active layer comprises:
forming a semiconductor layer on the substrate by a first patterning process, wherein the semiconductor layer comprises a first region, a second region and a third region, the first region is arranged in a middle region of the semiconductor layer, the third region is arranged in an edge region of the semiconductor layer, and the second region is arranged between the first region and the third region;
forming an insulating layer and a gate on the semiconductor layer in this order by a fourth patterning process, wherein an orthographic projection region of the gate on the semiconductor layer exactly covers the first region, and forming a second blocking layer for blocking an ion beam on the gate by a fifth patterning process, wherein an orthographic projection region of the second blocking layer on the semiconductor layer exactly covers the first region and the second region;
performing a first doping on the semiconductor layer with an ion beam perpendicular to the substrate; and
rotating the substrate by a preset angle A in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the semiconductor layer with the ion beam, to form a semiconductor active layer
wherein the preset angle A satisfies tan A=L/(H1+H2+H3), wherein L indicates a length of the second region in a preset direction, H1 indicates a thickness of the semiconductor layer, H2 indicates a thickness of a portion of the insulating layer which is arranged right above the second region, and H3 indicates a thickness of the gate.

6. The fabricating method of claim 5 , wherein prior to forming the semiconductor layer on the substrate by the first patterning process, the method further comprises:
forming a light shielding layer and a buffer layer on the substrate by a third patterning process.

7. The fabricating method of claim 5 , wherein after forming the semiconductor active layer, the method further comprises:
removing the second blocking layer, and
forming the source electrode and the drain electrode on the semiconductor active layer by a sixth patterning process.

8. The fabricating method of claim 5 , wherein a dose of doping ion for the second doping smaller is than the first doping.

9. The fabricating method of claim 5 , wherein rotating the substrate by the preset angle A in the direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing the second doping on the semiconductor layer with the ion beam, to form the semiconductor active layer, comprises:
rotating the substrate clockwise by the preset angle A in the direction parallel to the ion beam, so that the second blocking layer does not shield the second region, performing the second doping on the semiconductor layer with the ion beam, and, rotating the substrate counterclockwise by the preset angle A in the direction parallel to the ion beam, so that the second blocking layer does not shield the second region, performing the second doping on the semiconductor layer again with the ion beam, to form the semiconductor active layer.

10. A thin film transistor fabricated by the method of claim 5 .

11. A method for fabricating a thin film transistor, comprising forming a gate, a source electrode, a drain electrode, and a semiconductor active layer, wherein forming the semiconductor active layer comprises:
forming a semiconductor layer on the substrate by a first patterning process, wherein the semiconductor layer comprises a first region, a second region and a third region, the first region is arranged in a middle region of the semiconductor layer, the third region is arranged in an edge region of the semiconductor layer, and the second region is arranged between the first region and the third region;
forming a first blocking layer and a second blocking layer for blocking an ion beam on the semiconductor layer in this order by a second patterning process, wherein an orthographic projection region of the first blocking layer on the semiconductor layer exactly covers the first region, and an orthographic projection region of the second blocking layer on the semiconductor layer exactly covers the first region and the second region;
performing a first doping on the semiconductor layer with an ion beam perpendicular to the substrate; and
rotating the substrate by a preset angle A in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the semiconductor layer with the ion beam, to form a semiconductor active layer
wherein the preset angle A satisfies tan A=L/(H1+H2), wherein L indicates a length of the second region in a preset direction, H1 indicates a thickness of the semiconductor layer, and H2 indicates a thickness of the first blocking layer.

12. The fabricating method of claim 11 , wherein a dose of doping ion for the second doping smaller is than the first doping.

13. The fabricating method of claim 11 , wherein rotating the substrate by the preset angle A in the direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing the second doping on the semiconductor layer with the ion beam, to form the semiconductor active layer, co

Assignees

• Ordos Yuansheng Optoelectronics Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Wang Xuewei

Classifications

• H10P30/2044

  into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/6539

  by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions · CPC title