Method of depositing tungsten

Patent metadata

Field	Value
Publication number	US-10886141-B2
Application number	US-201916520989-A
Country	US
Kind code	B2
Filing date	Jul 24, 2019
Priority date	Jul 30, 2018
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.

First claim

What is claimed is:

1. A method of depositing tungsten, in which a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes:
an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate;
a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate;
a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate;
a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate;
a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce a concentration of an impurity in the unit deposition film; and
a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate,
wherein the processing step is performed in any one or more steps except for the reaction step and the second purge step of the unit cycle, and
wherein the processing gas containing a hydrogen (H) element is not provided together with the gas containing tungsten in the processing step.

2. The method of claim 1 , further comprising depositing a tungsten bulk layer on the tungsten nucleation layer after depositing the tungsten nucleation layer by performing the unit cycle at least once.

3. The method of claim 1 , wherein the gas containing tungsten comprises WF 6 gas, and the impurity comprises fluorine (F).

4. The method of claim 1 , wherein the processing gas comprises hydrogen (H 2 ) gas, water vapor (H 2 O) or ammonia (NH 3 ) gas.

5. The method of claim 1 , wherein the first process gas comprises B 2 H 6 or SiH 4 .

6. The method of claim 1 , wherein the processing step is performed after the second purge step.

Assignees

• Wonik Ips Co Ltd

Inventors

• Yoon Won Jun

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W20/052

  by treatments not introducing additional elements therein · CPC title

• H10W20/045 Primary

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title