Gas storage cylinder, deposition system, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10883173-B2
Application number	US-201816200149-A
Country	US
Kind code	B2
Filing date	Nov 26, 2018
Priority date	Apr 6, 2018
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

First claim

What is claimed is:

1. A gas-storage cylinder comprising:
a cylinder, wherein a hull of the cylinder includes manganese and iron;
a passivation portion disposed within and contacting an inner surface of the cylinder; and
a valve provided at an entrance of the cylinder; and
monochlorosilane stored within the cylinder and making contact with the passivation portion,
wherein a manganese content of the hull of the cylinder ranges from about 1 wt % to about 26 wt %,
wherein an iron content of the hull of the cylinder ranges from about 62 wt % to about 98.999 wt %,
wherein the passivation portion is in a liquid state, is adsorbed on the inner surface of the cylinder, and the passivation portion includes monochlorosilane and/or derivatives thereof,
wherein the inner surface of the cylinder includes a bottom surface, a lower portion of an inner-sidewall, and an upper portion of the inner-sidewall,
wherein the upper portion of the inner-sidewall of the cylinder is provided between the lower portion of the inner-sidewall of the cylinder and the valve, and
wherein the passivation portion covers the bottom surface, the lower portion of the inner-sidewall, and the upper portion of the inner-sidewall of the cylinder.

2. The gas-storage cylinder of claim 1 , further comprising:
a storage housing at least partially surrounding the cylinder, the storage housing comprising a temperature control device,
wherein the temperature control device is configured to maintain an interior temperature of the storage housing to a temperature within a range of about −45 degrees Celsius to about 10 degrees Celsius.

3. The gas-storage cylinder of claim 1 , further comprising:
a storage housing at least partially surrounding the cylinder; and
a temperature control device disposed outside of the storage housing and configured to maintain an interior temperature of the storage housing to a temperature within a range of about −45 degrees Celsius to about 10 degrees Celsius.

4. The gas-storage cylinder of claim 1 , wherein the cylinder comprises:
an outer cylinder; and
an inner cylinder disposed within and making contact with an inner surface of the outer cylinder,
wherein a manganese content of the inner cylinder is greater than a manganese content of the outer cylinder.

5. The gas storage cylinder of claim 1 , wherein the cylinder further comprosing silicon of 0.001 wt% to 2 wt%.

6. The gas-storage cylinder of claim 1 , wherein the lower portion of the inner-sidewall including a first lower inner-sidewall and a second lower inner-sidewall spaced apart from each other in a first direction, the first direction is parallel to the bottom surface of the cylinder,
wherein the upper portion of the inner-sidewall including a first upper inner-sidewall and a second upper inner-sidewall spaced apart from each other in the first direction, and
wherein a distance between the first and second upper inner-sidewalls of the cylinder is smaller than a distance between the first and second lower inner-sidewalls of the cylinder.

7. A deposition system, comprising:
a gas-storage cylinder, wherein a hull of the gas-storage cylinder includes manganese and iron;
a gas supply pipe connected to the gas-storage cylinder, wherein the gas supply pipe includes manganese; and a passivation portion disposed within and contacting an inner surface of the gas-storage cylinder and ara inner surface of the gas supply pipe,
wherein a manganese content of the hull of the gas-storage cylinder ranges from about 1 wt% to about 2.6 wt%, a valve provided at an entrance of the gas-storage cylinder; and wherein an iron content of the hull of the gas-storage cylinder ranges from about 62 wt% to about 98.999 wt%%,
wherein the passivation portion is in a liquid state, is adsorbed on the inner surface of the gas-storage cylinder and the inner surface of the gas supply pipe, and the passivation portion includes monochlorosilane and/or derivatives thereof,
wherein the inner surface of the gas-storage cylinder includes a bottom surface, a lower portion of an inner-sidewall, and an upper portion of the inner-sidewall,
wherein the upper portion of the inner-sidewall of the gas-storage cylinder is provided between the lower portion of the inner-sidewall of the gas-storag cylinder and the valve, and
wherein the passivation portion covers the bottom surface, the lower portion of the i sidewall, and the upper portion of the inner-sidewall of the gas-storge cylinder.

8. The deposition system of claim 7 , further comprising a process chamber connected to the gas-storage cylinder by the gas supply pipe.

9. The deposition system of claim 7 , truer comprising:
a storage housing at least partially surrounding the gas-storage cylinder, the storage housing comprising a temperature control device,
wherein the temperature control device is configured to maintain an interior tempera e of the storage housing to a temperature within a range of about −45 degrees Celsius to about 10 degrees Celsius.

10. The deposition system of claim 7 , further comprising:
a storage housing at least partially surrounding the gas-storage cylinder; and
a temperature control device disposed outside of the storage housing and configured to maintain an interior temperature of the storage housing to a temperature within a range of about −45 degrees Celsius to about 10 degrees Celsius.

11. The deposition system of claim 7 , wherein the gas supply pipe further comprising iron of 62 wt % to 98.999 wt %, and
wherein a manganese content of the gas supply pipe ranges from about 1 wt % to about 26 wt %.

12. The deposition system of claim 7 , wherein the gas supply pipe comprises:
an outer pipe; and
an inner pipe disposed within, and contacting an inner surface of the outer pipe,
wherein a manganese content of the inner pipe is greater than a manganese content of the outer pipe.

13. The deposition system of claim 7 , wherein the gas-storage cylinder further comprising silicon of 0.001 wt% to 2 wt%.

Assignees

• Samsung Electronics Co Ltd
• Samsung Electronics Ltd

Inventors

• Han Yeonock
• Chung Wonwoong
• Park Keum Seok
• Park Pankwi
• Yoo Jeongho
• Cho Younjoung
• Kong Byung Koo
• Kim Mijeong
• Lee Jin Wook
• Jang Changeun

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/272

  using mask materials other than SiO2 or SiN · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title