PVD deposition and anneal of multi-layer metal-dielectric film

Patent metadata

Field	Value
Publication number	US-10879177-B2
Application number	US-201514745367-A
Country	US
Kind code	B2
Filing date	Jun 19, 2015
Priority date	Jun 19, 2015
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

The present disclosure provides a film stack structure formed on a substrate and methods for forming the film stack structure on the substrate. In one embodiment, the method for forming a film stack structure on a substrate includes depositing a first adhesion layer on an oxide layer formed on the substrate and depositing a metal layer on the first adhesion layer, wherein the first adhesion layer and the metal layer form a stress neutral structure.

First claim

What is claimed is:

1. A method for forming a film stack on a substrate, comprising:
forming a plurality of oxide metal structures comprising sequential repetitions of:
depositing an oxide layer using tetraethylorthosilicate (TEOS), the oxide layer having a first thickness of less than or equal to 250 Å;
depositing an adhesion layer comprising tungsten nitride on the oxide layer; and
depositing a metal layer comprising tungsten on the adhesion layer, wherein the adhesion layer and the metal layer form a stress neutral structure having a second thickness less than or equal to 200 Å, wherein each layer of the plurality of oxide metal structures is deposited using one of a plurality of processing chambers of a multi-chamber system, and wherein the plurality of oxide metal structures are sequentially formed before the substrate is removed from the multi-chamber system.

2. The method of claim 1 , wherein the film stack contains at least 50 layers.

3. The method of claim 2 , wherein each adhesion layer has a thickness less than 40 {acute over (Å)}.

4. The method of claim 1 , further comprising:
annealing the film stack formed on the substrate by heating the substrate to at least 500° C.

5. The method of claim 1 , wherein each oxide metal structure causes less than 1 μm of substrate bow.

6. The method of claim 1 , wherein the adhesion layer consists essentially of tungsten nitride and the metal layer consists essentially of tungsten.

7. A method for forming a film stack on a substrate, comprising:
using a first processing chamber of a plurality of processing chambers to deposit an oxide layer on the substrate, wherein the oxide layer has a thickness less than or equal to 250 Å;
using a second processing chamber of the plurality of processing chambers to deposit a first metal nitride adhesion layer comprising tungsten nitride or titanium nitride on the oxide layer;
using a third processing chamber of the plurality of processing chambers to deposit a tungsten layer on the first metal nitride adhesion layer;
forming a stress neutral structure by using a fourth processing chamber of the plurality of processing chambers to deposit a second metal nitride adhesion layer on the tungsten layer, wherein the first and second metal nitride adhesion layers and the tungsten layer have a combined thickness less than or equal to 200 Å, wherein the plurality of processing chambers are fluidly coupled by one or more transfer chambers to form a multi-chamber processing system; and
forming a plurality of oxide metal structures by repeating sequential depositions of the oxide layer, the first metal nitride adhesion layer, the tungsten layer, and the second metal nitride adhesion layer, wherein forming the plurality of oxide metal structures comprises transferring the substrate between the plurality of processing chambers before removing the substrate from the multi-chamber processing system.

8. The method of claim 7 , further comprising:
annealing the film stack formed on the substrate by heating the substrate to a temperature of at least 500° C.

9. The method of claim 7 , further comprising:
depositing the oxide layer using a tetraethylorthosilicate (TEOS) precursor.

10. The method of claim 9 , wherein each of the first and second metal nitride adhesion layers has a thickness less than 40 Å.

11. The method of claim 7 , wherein the first metal nitride adhesion layer is the same material as the second metal nitride adhesion layer.

12. The method of claim 9 , wherein each oxide metal structure causes less than 1 μm of substrate bow.

13. The method of claim 9 , wherein the film stack contains at least 50 layers.

14. A method for forming a film stack on a substrate, comprising sequentially:
depositing, using a first processing chamber of a multi-chamber system, a first adhesion layer consisting essentially of tungsten nitride or titanium nitride;
depositing, using a second processing chamber of the multi-chamber system, a tungsten layer on the first adhesion layer;
forming a stress neutral structure by depositing, using a third processing chamber of the multi-chamber system, a second adhesion layer on the tungsten layer, wherein the first and second adhesion layers consist of essentially the same material, and wherein the first and second adhesion layers and the tungsten layer have a combined thickness of less than or equal to 200 Å;
transferring the substrate from the third processing chamber to a fourth processing chamber of the multi-chamber system without removing the substrate from the multi-chamber system; and
depositing, using the fourth processing chamber, an oxide layer on the second adhesion layer, wherein the oxide layer is deposited to a thickness of less than 250 Å using tetraethylorthosilicate (TEOS).

15. The method of claim 14 , further comprising forming a plurality of oxide metal structures by repeated the sequential deposition of, the first adhesion layer, the tungsten layer, the second adhesion layer, and the oxide layer.

16. The method of claim 15 , wherein forming the plurality of oxide metal structures comprises forming at least 50 layers.

17. The method of claim 15 , wherein each oxide metal structure of the plurality of oxide metal structures causes less than 1 μm of substrate bow.

18. The method of claim 14 , wherein each adhesion layer has a thickness less than 40 {acute over (Å)}.

19. The method of claim 14 , further including annealing the film stack by heating the substrate to a temperature of at least 500° C.

Assignees

• Applied Materials Inc

Inventors

• Yu Minrui
• Ma Kai
• Kwon Thomas
• Singh Kaushal K
• Ping Er-Xuan

Classifications

• H10W20/031

  of conductive parts of the interconnections · CPC title

• H10W20/425 Primary

  Barrier, adhesion or liner layers · CPC title

• H10W20/064

  by modifying the conductivity of conductive parts, e.g. by alloying · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/44 Primary

  Physical vapour deposition [PVD] · CPC title