Planarization apparatus and planarization method thereof

Patent metadata

Field	Value
Publication number	US-10879077-B2
Application number	US-201816104094-A
Country	US
Kind code	B2
Filing date	Aug 16, 2018
Priority date	Oct 30, 2017
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

First claim

What is claimed is:

1. A planarization apparatus, comprising:
a platen configured to support a wafer; and
a grinding wheel over the platen and configured to grind the wafer, the grinding wheel comprising:
a base ring; and
a plurality of grinding teeth mounted on the base ring, the plurality of grinding teeth comprising a base material and a plurality of grinding abrasives, wherein the plurality of grinding abrasives is ball type, and the grinding abrasives are dispensed in and fixed in the base material to grind the wafer;

a reservoir over the platen for accommodating a slurry comprising an electrolyte; and
a first electrode and a second electrode configured to provide an electrical potential between the wafer and the electrolyte to electrochemically etch the wafer.

2. The planarization apparatus of claim 1 , wherein a Mohs hardness of the plurality of grinding abrasives is substantially equal to or greater than 9.

3. The planarization apparatus of claim 1 , further comprising a chuck table over the platen, and configured to fix the wafer.

4. The planarization apparatus of claim 3 , wherein the platen and the chuck table are rotatable about different axes.

5. The planarization apparatus of claim 1 , further comprising a resistance adjusting component in the electrolyte, and between the first electrode and the second electrode.

6. The planarization apparatus of claim 5 , wherein the resistance adjusting component comprises a porous membrane.

7. A planarization apparatus, comprising:
a platen configured to support a wafer;
a frame disposed on the platen, wherein the frame surrounds the wafer, defining a reservoir over the platen for accommodating a slurry comprising an electrolyte;
a grinding wheel over the platen and configured to grind the wafer, wherein the grinding wheel comprises:
a base ring; and
a plurality of grinding teeth mounted on the base ring, the plurality of grinding teeth comprising a plurality of grinding abrasives, wherein the plurality of grinding abrasives is ball type, and the grinding abrasives are fixed to the base ring; and

a first electrode and a second electrode configured to provide an electrical potential between the wafer and the electrolyte, wherein the first electrode is disposed under the wafer, and the second electrode is disposed aside the wafer.

8. The planarization apparatus of claim 7 , wherein the slurry comprise an alkaline solution.

9. The planarization apparatus of claim 7 , wherein the first electrode is in contact with the wafer and the second electrode is in contact with the electrolyte.

10. The planarization apparatus of claim 7 , further comprising a resistance adjusting component in the electrolyte, and between the first electrode and the second electrode, wherein a resistance of the resistance adjusting component is higher than that of the wafer.

11. The planarization apparatus of claim 10 , wherein the resistance adjusting component comprises a porous membrane.

12. The planarization apparatus of claim 10 , wherein the resistance adjusting component surrounds the wafer.

13. The planarization apparatus of claim 7 , further comprising a heater configured to heat the slurry.

14. The planarization apparatus of claim 7 , further comprising a chuck table over the platen, and configured to fix the wafer.

15. The planarization apparatus of claim 14 , wherein the platen and the chuck table are rotatable about different axes.

16. The planarization apparatus of claim 7 , wherein the slurry comprises a plurality of polishing abrasives, and the plurality of polishing abrasives is ball type.

17. The planarization apparatus of claim 7 , wherein the first electrode is disposed in the platen.

18. A planarization method, comprising:
disposing a wafer in a reservoir;
feeding a slurry into the reservoir, wherein the slurry comprises an electrolyte and a plurality of polishing abrasives, and the grinding wheel comprises a plurality of ball type grinding abrasives;
applying a voltage potential between the electrolyte and the wafer to electrochemically etch the wafer; and
grinding the wafer with a grinding wheel.

19. The planarization method of claim 18 , wherein the wafer is grinded while electrochemically etching the wafer.

20. The planarization method of claim 18 , wherein the applying the voltage potential between the electrolyte and the wafer comprises:
providing a first voltage to the wafer through a first electrode;
providing a second voltage to the electrolyte through a second electrode; and
adding a resistance adjusting component between the first electrode and the second electrode in the electrolyte.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wu Ming-Tung
• Lan Chun-Kai
• Chou Tung-He
• Kuang Hsun-Chung

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/613

  of Group IV materials · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• B24B37/042 Primary

  operating processes therefor · CPC title