Substrate processing apparatus, liquid precursor replenishment system, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10876207-B2
Application number	US-201916354313-A
Country	US
Kind code	B2
Filing date	Mar 15, 2019
Priority date	Sep 21, 2016
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a process chamber in which a substrate is accommodated;
a storage tank formed to include a bottom portion having a recess and a wall portion extending upward from a peripheral edge of the bottom portion, and configured to store a liquid precursor;
a vaporizing part configured to vaporize the liquid precursor stored in the storage tank to generate a precursor gas;
a supply part configured to supply the precursor gas generated by the vaporizing part to the process chamber;
a sensor disposed in the recess and configured to detect a liquid level of the liquid precursor stored in the storage tank;
a replenishment part configured to replenish the liquid precursor in the storage tank; and
a controller configured to:
control the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate; and
each time when the substrate processing process is performed a predetermined number of times, control the replenishment part, based on the liquid level of the liquid precursor detected by the sensor, to replenish the liquid precursor in the storage tank so that the liquid level of the liquid precursor stored in the storage tank becomes a predetermined level, the predetermined level being a liquid level available when a total sum of a minimum liquid precursor amount required for the sensor to detect the liquid level and a liquid precursor amount required for performing the substrate processing process the predetermined number of times is stored in the storage tank.

2. The apparatus of claim 1 , wherein the minimum liquid precursor amount required for the sensor to detect the liquid level is an amount at which the liquid level is a lower limit value of the storage tank.

3. The apparatus of claim 1 , wherein the liquid precursor amount required for performing the substrate processing process the predetermined number of times is a liquid precursor amount required for forming a predetermined film on the substrate by performing a cycle the predetermined number of times, the cycle including sequentially performing:
supplying the precursor gas into the process chamber;
removing the precursor gas in the process chamber;
supplying a reaction gas into the process chamber; and
removing the reaction gas in the process chamber.

4. The apparatus of claim 1 , wherein the sensor is an ultrasonic sensor and is configured to continuously detect the liquid level of the liquid precursor.

5. The apparatus of claim 1 , further comprising:
a gas supply pipe configured to supply a carrier gas, the gas supply pipe penetrating a ceiling portion of the storage tank and having one end disposed in the liquid precursor stored in the storage tank,
wherein the vaporizing part is configured so that the carrier gas supplied from the gas supply pipe acts on the liquid precursor to vaporize the liquid precursor to generate the precursor gas.

6. A liquid precursor replenishment system, comprising:
a storage tank formed to include a bottom portion having a recess and a wall portion extending upward from a peripheral edge of the bottom portion, and configured to store a liquid precursor;
a vaporizing part configured to vaporize the liquid precursor stored in the storage tank to generate a precursor gas;
a supply part configured to supply the precursor gas generated by the vaporizing part to an object;
a sensor disposed in the recess and configured to detect a liquid level of the liquid precursor stored in the storage tank;
a replenishment part configured to replenish the liquid precursor in the storage tank; and
a controller configured to;
control the supply part to supply the precursor gas to the object; and
each time when the precursor gas is supplied to the object a predetermined number of times, control the replenishment part, based on the liquid level of the liquid precursor detected by the sensor, to replenish the liquid precursor in the storage tank so that the liquid level of the liquid precursor stored in the storage tank becomes a predetermined level, the predetermined level being a liquid level available when a total sum of a minimum liquid precursor amount required for the sensor to detect the liquid level and a liquid precursor amount required for performing a substrate processing process the predetermined number of times is stored in the storage tank.

7. The system of claim 6 , wherein the minimum liquid precursor amount required for the sensor to detect the liquid level is an amount at which the liquid level is a lower limit value of the storage tank.

8. The system of claim 6 , wherein the liquid precursor amount required for performing the substrate processing process the predetermined number of times is a liquid precursor amount required for forming a predetermined film on a substrate by performing a cycle the predetermined number of times, the cycle including sequentially performing:
supplying the precursor gas into a process chamber;
removing the precursor gas in the process chamber;
supplying a reaction gas into the process chamber; and
removing the reaction gas in the process chamber.

9. The system of claim 6 , wherein the sensor is an ultrasonic sensor and is configured to continuously detect the liquid level of the liquid precursor.

10. The system of claim 6 , further comprising:
a gas supply pipe configured to supply a carrier gas, the gas supply pipe penetrating a ceiling portion of the storage tank and having one end disposed in the liquid precursor stored in the storage tank,
wherein the vaporizing part is configured so that the carrier gas supplied from the gas supply pipe acts on the liquid precursor to vaporize the liquid precursor to generate the precursor gas.

11. A method of manufacturing a semiconductor device, comprising a process of performing:
storing a liquid precursor in a storage tank formed to include a bottom portion having a recess and a wall portion extending upward from a peripheral edge of the bottom portion, so that a liquid level of the liquid precursor stored in the storage tank becomes a predetermined level;
vaporizing the liquid precursor stored in the storage tank into a precursor gas;
processing a substrate using the precursor gas; and
replenishing the liquid precursor in the storage tank each time when the act of processing is performed a predetermined number of times so that the liquid level of the liquid precursor stored in the storage tank becomes the predetermined level, based on a liquid level of the liquid precursor detected by a sensor disposed in the recess to detect the liquid level of the liquid precursor stored in the storage tank, the predetermined level is a liquid level available when a total sum of a minimum liquid precursor amount required for the sensor to detect the liquid level and a liquid precursor amount required for performing the act of processing the predetermined number of times is stored in the storage tank.

Assignees

• Kokusai Electric Corp

Inventors

• Isobe Noriyuki
• Suzaki Kenichi
• Kasai Takeshi
• Kawahara Yoshitaka
• Shimada Masakazu

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/4482

  by bubbling of carrier gas through liquid source material · CPC title