Formation of correlated electron material (CEM) device via dopant deposition and anneal

Patent metadata

Field	Value
Publication number	US-10873025-B2
Application number	US-201916572521-A
Country	US
Kind code	B2
Filing date	Sep 16, 2019
Priority date	Mar 28, 2018
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

First claim

What is claimed is:

1. A method of constructing a switching device, comprising:
depositing in a chamber one or more layers of a first material over a conductive substrate;
depositing one or more layers of a second material having an atomic concentration of metal atoms over the one or more layers of the first material;
depositing one or more layers of a third material over the one or more layers of the second material; and
annealing the one or more layers of the first material, the one or more layers of the second material and the one or more layers of the third material to diffuse one or more dopants from the one or more layers of the first material and the one or more layers of the third material into the one or more layers of the second material to form a first correlated electron material (CEM) and to impart a particular distribution of an atomic concentration of the one or more dopants within the one or more layers of the second material to provide a switching capability.

2. The method of claim 1 , wherein the one or more layers of the first material or the one or more layers of the third material, or a combination thereof, are deposited to respective particular thicknesses selected to impart the particular distribution of the atomic concentration of the one or more dopants in the one or more layers of the second material from the annealing.

3. The method of claim 2 , wherein the particular distribution of the atomic concentration of the one or more dopants in the one or more layers of the second material imparted from the annealing varies at least in part as a function of separation from the conductive substrate.

4. The method of claim 2 , wherein the particular distribution of the atomic concentration of the one or more dopants in the one or more layers of the second material decreases with an increase in distance from the conductive substrate.

5. The method of claim 1 , further comprising forming a capping layer over the one or more layers of the third material;
wherein the particular distribution of the atomic concentration of the one or more dopants in the one or more layers of the second material decreases with an increase in separation from the conductive substrate until a reduced concentration is imparted at a particular location within the one or more layers of the second material, and wherein the particular distribution of the atomic concentration of the one or more dopants in the one or more layers of the second material increases from the reduced concentration imparted at the particular location within the one or more layers of the second material with a decrease in separation from the particular location to the capping layer.

6. The method of claim 1 , wherein the conductive substrate comprises an atomic concentration of at least 90.0% of titanium.

7. The method of claim 1 , wherein the depositing the one or more layers of the first material comprises depositing the one or more layers of the first material to a thickness of 0.1 Å to 250.0 Å.

8. The method of claim 7 , wherein the first material comprises an atomic concentration of at least 90.0% of nickel.

9. The method of claim 1 , wherein the depositing the one or more layers of the second material comprises depositing the one or more layers of the second material to a thickness of 15.0 Å to 1500.0 Å.

10. The method of claim 1 , wherein the second material comprises a metal, metal oxide or metal compound, or a combination thereof.

11. The method of claim 1 , wherein the second material comprises an atomic concentration of at least about 90.0% of nickel.

12. The method of claim 1 , wherein the third material comprises a similar material to the first material.

13. The method of claim 1 , wherein the third material comprises a different material from the first material.

14. The method of claim 1 , wherein the annealing the one or more first layers of the first material, the one or more layers of the second material and the one or more layers of the third material comprises annealing the one or more layers of the first material, the one or more layers of the second material and the one or more layers of the third material in an oxygen-containing environment.

15. The method of claim 14 , further comprising forming the oxygen-containing environment via substantially filling the chamber with carbon dioxide (CO 2 ), carbon monoxide (CO), oxygen (O 2 ), ozone (O 3 + ) or nitrosyl (NO), or any combination thereof.

16. A switching device, comprising: a structure comprising:
a conductive substrate; and
one or more layers of a first material positioned over the conductive substrate; and
a capping layer positioned over the one or more layers of the first material;
wherein the atomic concentration of a dopant in the one or more layers of the first material to increase with an increase in separation from the conductive substrate to a particular location within the one or more layers of the first material, and wherein the atomic concentration of the dopant in the one or more layers of the first material to decrease from the particular location within the one or more layers of the first material with a decrease in separation from the particular location to the capping layer.

Assignees

• Cerfe Labs Inc
• Advanced Risc Mach Ltd

Inventors

• Shifren Lucian
• Paz De Araujo Carlos Alberto
• Celinska Jolanta Bozena
• Mcwilliams Christopher Randolph

Classifications

• H10N70/023 Primary

  by chemical vapor deposition, e.g. MOCVD, ALD · CPC title

• H10B63/845 Primary

  the switching components being connected to a common vertical conductor · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/041

  Modification of switching materials after formation, e.g. doping (shaping H10N70/061) · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title