Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor

Patent metadata

Field	Value
Publication number	US-10872767-B2
Application number	US-201715696814-A
Country	US
Kind code	B2
Filing date	Sep 6, 2017
Priority date	Nov 29, 2016
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

A laser annealing apparatus, a fabrication method of a polysilicon thin film, and a fabrication method of a thin film transistor are provided. The laser annealing apparatus includes: a laser generator, an optical system and an annealing chamber. The laser generator is configured to emit a laser beam, and the laser beam is guided to the annealing chamber via the optical system. The optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy density of the first beam is greater than an energy density of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing.

First claim

The invention claimed is:

1. A laser annealing apparatus, comprising: a laser generator, an optical system and an annealing chamber, wherein,
the laser generator is configured to emit a laser beam, the laser beam is guided to the annealing chamber after passing the optical system;
the optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy density of the first beam is greater than an energy density of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing;
a side of the annealing chamber is provided with a first slit and a second slit, the first beam enters into the annealing chamber through the first slit, the second beam enters into the annealing chamber through the second slit, the first slit and the second slit are configured that the first slit is opened while the second slit is closed, and the second slit is opened while the first slit is closed;
the optical system further includes a light uniformization component, a focus mirror and a reflection mirror, and in a propagation direction of the laser beam, the light uniformization component and the focus mirror are provided in front of the beam splitter, and the reflection mirror is provided after the beam splitter;
the light uniformization component includes a short axis light uniformization element, a collection element, a long axis light uniformization element, a long axis expansion element and a short axis contraction element; and
in the propagation direction of the laser beam, the short axis light uniformization element, the collection element, the long axis light uniformization element, the long axis expansion element, and the short axis contraction element are sequentially arranged in this order;
the focus mirror includes a long axis focus mirror, a short axis focus mirror, and an auxiliary focus mirror;
in the propagation direction of the laser beam, the long axis focus mirror is located between the long axis light uniformization element and the long axis expansion element;
in the propagation direction of the laser beam, the short axis focus mirror is located between the short axis contraction element and the beam splitter; and
in the propagation direction of the laser beam, the auxiliary focus mirror is located behind the beam splitter and the reflection mirror.

2. The laser annealing apparatus according to claim 1 , wherein, an energy of the first beam is greater than an energy of the second beam.

3. The laser annealing apparatus according to claim 1 , wherein, the laser generator is an excimer laser.

4. The laser annealing apparatus according to claim 3 , wherein, the excimer laser includes an inert gas excimer laser, an inert gas halide excimer laser, a mercury halide excimer laser, an inert gas oxide excimer laser and a polyatomic excimer laser.

5. The laser annealing apparatus according to claim 1 , wherein,
the reflection mirror includes a first reflection mirror, a second reflection mirror and a third reflection mirror;
the first beam is reflected by the first reflection mirror and the second reflection mirror and then is guided to the annealing chamber; and
the second beam is reflected by the third reflection mirror and then is guided to the annealing chamber.

6. The laser annealing apparatus according to claim 1 , comprising at least two laser generators respectively emitting a first laser beam and a second laser beam, the first laser beam and the second laser beam being combined to obtain the laser beam.

7. The laser annealing apparatus according to claim 6 , wherein, an energy of the first laser beam and an energy of the second laser beam are both 1000 mj, an energy of the first beam is 1200 mj, and an energy of the second beam is 800 mj.

8. The laser annealing apparatus according to claim 1 , further comprising a carrier provided in the annealing chamber for carrying a substrate, and a first detector and a second detector respectively provided on both ends of the carrier;
wherein, the first detector and the second detector respectively detect the energy density of the first beam and the energy density of the second beam.

9. The laser annealing apparatus according to claim 1 , wherein, the annealing chamber is filled with a protective gas.

10. The laser annealing apparatus according to claim 1 , further comprising a first attenuator and a second attenuator, wherein, the first attenuator and the second attenuator respectively attenuate the energy density of the first beam and the energy density of the second beam.

11. A laser annealing apparatus, comprising: a laser generator, an optical system and an annealing chamber, wherein,
the laser generator is configured to emit a laser beam, the laser beam is guided to the annealing chamber after passing the optical system;
the optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy of the first beam is greater than an energy of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing; and
a side of the annealing chamber is provided with a first slit and a second slit, the first beam enters into the annealing chamber through the first slit, the second beam enters into the annealing chamber through the second slit, the first slit and the second slit are configured that the first slit is opened while the second slit is closed, and the second slit is opened while the first slit is closed,
the optical system further includes a light uniformization component, a focus mirror and a reflection mirror, and in a propagation direction of the laser beam, the light uniformization component and the focus mirror are provided in front of the beam splitter, and the reflection mirror is provided after the beam splitter;
the light uniformization component includes a short axis light uniformization element, a collection element, a long axis light uniformization element, a long axis expansion element and a short axis contraction element; and
in the propagation direction of the laser beam, the short axis light uniformization element, the collection element, the long axis light uniformization element, the long axis expansion element, and the short axis contraction element are sequentially arranged in this order;
the focus mirror includes a long axis focus mirror, a short axis focus mirror, and an auxiliary focus mirror;
in the propagation direction of the laser beam, the long axis focus mirror is located between the long axis light uniformization element and the long axis expansion element;
in the propagation direction of the laser beam, the short axis focus mirror is located between the short axis contraction element and the beam splitter; and
in the propagation direction of the laser beam, the auxiliary focus mirror is located behind the beam splitter and the reflection mirror.

Assignees

• Boe Technology Group Co Ltd
• Ordos Yuansheng Optoelectronics Co Ltd
• Ordos Yuansheng Optoelecetronics Co Ltd

Inventors

• Wang Jingshuai

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P14/3816

  Pulsed laser beam · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title