Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor
US-10872767-B2 · Dec 22, 2020 · US
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Patent family 58905418
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 58905418 |
| Family type | — |
| Earliest priority | Nov 29, 2016 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US10872767B2 — Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor |
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US10872767B2 — Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor (published Dec 22, 2020)
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