Spintronic mechanical shock and vibration sensor device

Patent metadata

Field	Value
Publication number	US-10871529-B2
Application number	US-201816195588-A
Country	US
Kind code	B2
Filing date	Nov 19, 2018
Priority date	Sep 11, 2018
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, an elastic layer, and a tunnel barrier. The free layer is spaced apart from the pinned layer by the tunnel barrier and the elastic layer. The processing circuitry is configured to measure a resistance at the MTJ element and determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.

First claim

The invention claimed is:

1. A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
a MTJ element comprising a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress; and
processing circuitry electrically connected to the MTJ element and configured to:
measure a resistance at the MTJ element; and
determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.

2. The device of claim 1 , wherein the free layer is spaced apart from the tunnel barrier by the elastic layer.

3. The device of claim 1 , wherein the tunnel barrier is spaced apart from the pinned layer by the elastic layer.

4. The device of claim 1 , wherein the elastic layer is a first elastic layer, wherein the free layer is spaced apart from the tunnel barrier by the first elastic layer and wherein the tunnel barrier is spaced apart from the pinned layer by a second elastic layer.

5. The device of claim 1 , wherein the tunnel barrier is a first tunnel barrier, wherein the free layer is spaced apart from the elastic layer by the first tunnel barrier, and wherein the elastic layer is spaced apart from the pinned layer by a second tunnel barrier.

6. The device of claim 1 , wherein the tunnel barrier is a first tunnel barrier, wherein the elastic layer is a first elastic layer, wherein the free layer is spaced apart from the first elastic layer by the first tunnel barrier, wherein the first elastic layer is spaced apart from a second elastic layer by a second tunnel barrier, and wherein the second tunnel barrier is spaced apart from the pinned layer by the second elastic layer.

7. The device of claim 1 , wherein the tunnel barrier is a first tunnel barrier, wherein the elastic layer is a first elastic layer, wherein the free layer is spaced apart from the first tunnel barrier by the first elastic layer, wherein the first tunnel barrier is spaced apart from a second tunnel barrier by a second elastic layer, and wherein the second elastic layer is spaced apart from the pinned layer by the second tunnel barrier.

8. The device of claim 1 , wherein the tunnel barrier is a first tunnel barrier, wherein the elastic layer is a first elastic layer, wherein the free layer is spaced apart from the first tunnel barrier by the first elastic layer, wherein the first tunnel barrier is spaced apart from a second tunnel barrier by a second elastic layer, and wherein the second tunnel barrier is spaced apart from the pinned layer by a third elastic layer.

9. The device of claim 1 , wherein the tunnel barrier is a first tunnel barrier, wherein the first tunnel barrier is spaced apart from a second tunnel barrier by the elastic layer, wherein the elastic layer is arranged below a lower surface of the first tunnel barrier and spaced apart from a first edge of the lower surface of the first tunnel barrier, and wherein the elastic layer is arranged above an upper surface of the second tunnel barrier and spaced apart from a first edge of the upper surface of the second tunnel barrier.

10. The device of claim 9 , wherein the elastic layer is spaced apart from a second edge of the lower surface of the first tunnel barrier and wherein the elastic layer is spaced apart from a second edge of the upper surface of the second tunnel barrier.

11. The device of claim 1 , wherein the free layer is spaced apart from the tunnel barrier by the elastic layer, wherein the elastic layer is arranged below a lower surface of the free layer and spaced apart from a first edge of the lower surface of the free layer, and wherein the elastic layer is arranged above an upper surface of the tunnel barrier and spaced apart from a first edge of the upper surface of the tunnel barrier.

12. The device of claim 11 , wherein the elastic layer spaced apart from a second edge of the lower surface of the free layer and wherein the elastic layer is spaced apart from a second edge of the upper surface of the tunnel barrier.

13. The device of claim 1 , wherein the tunnel barrier is spaced apart from the pinned layer by the elastic layer, wherein the elastic layer is arranged below a lower surface of the tunnel barrier and spaced apart from a first edge of the lower surface of the tunnel barrier, and wherein the elastic layer is arranged above an upper surface of the pinned layer and spaced apart from a first edge of the upper surface of the pinned layer.

14. The device of claim 13 , wherein the elastic layer spaced apart from a second edge of the lower surface of the tunnel barrier and wherein the elastic layer is spaced apart from a second edge of the upper surface of the pinned layer.

15. The device of claim 1 ,
wherein, to measure the resistance at the MTJ element, the processing circuitry is configured to measure a resistance between the pinned layer and the free layer; and
wherein, to determine whether mechanical shock and vibration has occurred, the processing circuitry is configured to:
determine mechanical shock and vibration has occurred when the measured resistance between the pinned layer and the free layer does not satisfy a mechanical shock and vibration threshold; and
determine mechanical shock and vibration has not occurred when the measured resistance between the pinned layer and the free layer satisfies the mechanical shock and vibration threshold.

16. The device of claim 1 , wherein the elastic layer comprises one or more sheets of Carbon, Graphene, an Elastomer.

17. A method for detecting mechanical shock and vibration using a magnetic tunnel junction (MTJ) based sensor device, the method comprising:
measuring, by processing circuitry, a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress; and
determining, by the processing circuitry, whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.

18. The method of claim 17 ,
wherein measuring the resistance at the MTJ element comprises measuring a resistance between the pinned layer and the free layer; and
wherein determining whether mechanical shock and vibration has occurred comprises:
determining mechanical shock and vibration has occurred when the measured resistance between the pinned layer and the free layer does not satisfy a mechanical shock and vibration threshold; and
determining vibration threshold and determine mechanical shock and vibration has not occurred when the measured resistance between the pinned layer and the free layer satisfies the mechanical shock and vibration threshold.

19. A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
means for measuring a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress; and
means for determining whether mechanical shock and vibration has occurred based on the resistance at t

Assignees

• Honeywell Int Inc

Inventors

• Katti Romney R
• Ambrose Edward F

Classifications

• G01H11/06 Primary

  by electric means · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G01H11/02

  by magnetic means, e.g. reluctance · CPC title