System and methods for magnetic tunnel junction pressure sensors

Patent metadata

Field	Value
Publication number	US-2017016784-A1
Application number	US-201514839301-A
Country	US
Kind code	A1
Filing date	Aug 28, 2015
Priority date	Jul 17, 2015
Publication date	Jan 19, 2017
Grant date	—

Abstract

System and methods for magnetic Tunnel Junction pressure sensors are provided. In at least one implementation, a pressure sensor device comprises a magnetic tunnel junction comprising a free layer structure, a tunnel barrier, and a reference layer structure, wherein one or more surfaces of the free layer structure is exposed to respond to a pressure medium; and a voltage source coupled to the magnetic tunnel junction, the voltage source providing electrical power to the free layer structure and the reference layer structure. The device further comprises a current detector coupled between the magnetic tunnel junction and the voltage source; and a pressure calculating device, configured to calculate a pressure based on a current detected by the current detector.

First claim

1 . A pressure sensor device, the pressure sensor device comprising:
a magnetic tunnel junction comprising a free layer structure, a tunnel barrier, and a reference layer structure, wherein one or more surfaces of the free layer structure is exposed to respond to a pressure medium; a voltage source coupled to the magnetic tunnel junction, the voltage source providing electrical power to the free layer structure and the reference layer structure; a current detector coupled between the magnetic tunnel junction and the voltage source; and a pressure calculating device, configured to calculate a pressure based on a current detected by the current detector.

2 . The pressure sensor device of claim 1 , wherein the surface of the free layer structure is coated with a passivation layer.

3 . The pressure sensor device of claim 1 , wherein a free layer magnetization direction of the free layer structure and a reference layer magnetization direction of the reference layer structure are parallel to planes of the free layer structure and the reference layer structure.

4 . The pressure sensor device of claim 3 , wherein the free layer magnetization direction of the free layer structure is initially configured to be in a same direction of the reference layer magnetization direction, wherein the free layer magnetization is configured to rotate within the plane of the free layer structure when the pressure of the pressure medium changes.

5 . The pressure sensor device of claim 3 , wherein the free layer magnetization direction of the free layer structure is initially configured to be in an opposite direction of the reference layer magnetization direction, wherein the free layer magnetization is configured to rotate within the plane of the free layer structure when the pressure of the pressure medium changes.

6 . The pressure sensor device of claim 1 , wherein a free layer magnetization direction of the free layer structure has magnetization directions that rotates in a magnetization planes that is perpendicular to a plane of the free layer structure when the pressure of the pressure medium changes.

7 . The pressure sensor device of claim 1 , further comprising a coupled free layer between the free layer structure and the tunnel barrier.

8 . The pressure sensor device of claim 7 , further comprising a coupling modulated interlayer between the coupled free layer and the free layer structure.

9 . A method for fabricating a pressure sensor, the method comprising:
fabricating a magnetic tunnel junction, the magnetic tunnel junction comprising a free layer structure, a reference layer structure, and a tunnel barrier between the free layer structure and the reference layer structure, wherein one or more surfaces of the free layer structure respond to pressure exerted on the one or more surfaces by a pressure medium; coupling the free layer structure and the reference layer structure to a voltage source; coupling a current detector between the magnetic tunnel junction and the voltage source; and coupling a pressure calculating device to the current detector.

10 . The method of claim 9 , further comprising coating the one or more surfaces of the free layer structure with a passivation layer.

11 . The method of claim 9 , wherein a free layer magnetization direction of the free layer structure and a reference layer magnetization direction of the reference layer structure are parallel to planes of the free layer structure and the reference layer structure.

12 . The method of claim 11 , wherein the free layer magnetization direction of the free layer structure is initially configured to be in a same direction of the reference layer magnetization direction, wherein the free layer magnetization is configured to rotate within the plane of the free layer structure when the pressure of the pressure medium changes.

13 . The method of claim 11 , wherein the free layer magnetization direction of the free layer structure is initially configured to be in an opposite direction of the reference layer magnetization direction, wherein the free layer magnetization is configured to rotate within the plane of the free layer structure when the pressure of the pressure medium changes.

14 . The method of claim 9 , wherein a free layer magnetization direction of the free layer structure has magnetization directions that rotates in a magnetization planes that is perpendicular to a plane of the free layer structure when the pressure of the pressure medium changes.

15 . The method of claim 9 , further comprising fabricating a coupled free layer between the free layer structure and the tunnel barrier.

16 . The method of claim 15 , further comprising fabricating a coupling modulated interlayer between the coupled free layer and the free layer structure.

17 . An apparatus, the apparatus comprising:
a free layer structure having one or more exposed surfaces, wherein the free layer structure has a free layer magnetization direction that changes in response to pressure exerted on the one or more surfaces by a pressure medium; a reference layer structure having a fixed magnetization direction; a tunnel barrier bonded to and between the free layer structure and the reference layer structure; a voltage source coupled to and providing power to the free layer structure and the reference layer structure; a current detector configured to detect the current provided by the voltage source; and a pressure calculating device, configured to calculate a pressure based on a current detected by the current detector.

18 . The apparatus of claim 17 , further comprising a coupled free layer between the free layer structure and the tunnel barrier.

19 . The apparatus of claim 17 , further comprising a coupling modulated interlayer between the coupled free layer and the free layer structure.

20 . The apparatus of claim 17 , wherein the one or more exposed surfaces are coated with a passivation layer.

Assignees

• Honeywell Int Inc

Inventors

• Katti Romney R

Classifications

• G01L1/16

  using properties of piezoelectric devices · CPC title

• G01L1/125 Primary

  by using magnetostrictive means (magnetostrictive sensors H10N35/101) · CPC title