Monolithic WDM VCSELS with spatially varying gain peak and fabry perot wavelength

Patent metadata

Field	Value
Publication number	US-10868407-B2
Application number	US-201515572478-A
Country	US
Kind code	B2
Filing date	Jun 4, 2015
Priority date	Jun 4, 2015
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

An array of monolithic wavelength division multiplexing (WDM) vertical cavity surface emitting lasers (VCSELs) with spatially varying gain peak and Fabry Perot wavelength is provided. Each VCSEL includes a lower distributed Bragg reflector (DBR), a Fabry Perot tuning/current spreading layer, and a structure comprising a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) layer and an upper SCH layer. The structure is sandwiched between the DBR and the Fabry Perot tuning/current spreading layer. Each MQW experiences a different amount of quantum well intermixing and concomitantly a different wavelength shift. Each VCSEL further includes a top mirror on the Fabry Perot tuning/current spreading layer. A method is also provided for manufacturing the array.

First claim

What is claimed is:

1. An array of monolithic wavelength division multiplexing (WDM) vertical cavity surface emitting lasers (VCSELs) with spatially varying gain peak and Fabry Perot wavelength, including:
a first VCSEL, wherein the first VCSEL comprises:
a lower distributed Bragg reflector (DBR);
a first Fabry Perot tuning/current spreading layer; and
a first structure comprising a first multiple quantum well (MQW) layer sandwiched between a first lower separate confinement heterostructure (SCH) layer and a first upper SCH layer, the first structure sandwiched between the DBR and the first Fabry Perot tuning/current spreading layer, the first MQW layer experiencing a different first amount of quantum well intermixing that is induced by a correspondingly different first concentration of point defects selectively created using a first patternable layer that is patterned to cover a first area on a first sacrificial layer on the first Fabry Perot tuning/current spreading layer above the first MQW layer and concomitantly a different first wavelength shift;
and a first top mirror on the first Fabry Perot tuning/current spreading layer; and

a second VCSEL, wherein the second VCSEL comprises:
the lower DBR reflector;
a second Fabry Perot tuning/current spreading layer;
a second structure comprising a second MQW layer sandwiched between a second lower SCH layer and a second upper SCH layer, the second structure sandwiched between the DBR and the second Fabry Perot tuning/current spreading layer, the second MQW layer experiencing a second amount of quantum well intermixing that is induced by a correspondingly second concentration of point defects selectively created using a second patternable layer that is patterned differently from the first patternable layer to cover a second area on a second sacrificial layer on the second Fabry Perot tuning/current spreading layer above the second MQW and concomitantly a second wavelength shift, wherein the first amount of quantum well intermixing is different than the second amount of quantum well intermixing; and
a second top mirror in the second Fabry Perot tuning/current spreading layer.

2. The array of claim 1 , in which the lower DBR comprises layers of GaAs and AlGaAs, the lower and upper SCH layers comprise GaAs and AlGaAs, and the MQW comprises layers of GaAs or InGaAs, and AlGaAs or InGaP or GaAsP.

3. The array of claim 1 , in which the first and the second Fabry Perot tuning/current spreading layer comprises AlGaAs, GaAs, or alternating layers of AlGaAs and GaAs.

4. The array of claim 1 , in which the first and the second top mirror comprises any of semiconductor Bragg reflectors, dielectric Bragg reflectors, dielectric enhanced metal hybrid mirrors, transparent conductive oxide or nitride enhanced metal hybrid mirrors, high contrast gratings, suspended reflectors, and combinations thereof.

5. The array of claim 1 , in which the first and the second VCSELs are arranged in a linear fashion, the first and the second VCSELs having a larger quantum well intermixing in a particular direction, the first and the second VCSELs emitting light of a wavelength that is blue-shifted in the direction of larger quantum well intermixing.

6. The array of claim 5 , in which the first concentration of point defects are created by a stress mismatch between a first stress-inducing layer and the first sacrificial layer, and the second concentration of point defects are created by a stress mismatch between a second stress-inducing layer and the second sacrificial layer, with a greater number of point defects resulting in a larger quantum well intermixing.

7. The array of claim 1 , in which the first and second Fabry Perot tuning/current spreading layers have different thickness for the first and second VCSELs in the array and in which the first and the second top mirrors have the same structure or in which the first and the second Fabry Perot tuning/current spreading layers have the same thickness for the first and the second VCSELs in the array and in which the first and the second top mirrors have a different structure for the first and the second VCSELs in the array or in which the first and the second Fabry Perot tuning/current spreading layers have a different thickness for the first and the second VCSELs in the array and in which the first and the second top mirrors have a different structure for the first and the second VCSELs in the array.

8. The array of claim 1 , further including appropriate ohmic contacts.

9. The array of claim 1 , in which the first and the second VCSELs either emit light from the top side or from the bottom side.

10. The array of claim 1 , wherein the first area covered by the first patternable layer induces a first amount of stress in the first MQW layer that further induces the first amount of quantum well intermixing experienced by the first MQW layer.

11. The array of claim 1 , wherein the second area covered by the second patternable layer is larger than the first area covered by the first patternable area, and induces a second amount of stress in the second MQW layer that is less than the first amount of stress in the first MQW layer, and further wherein the second amount of stress further induces the second amount of quantum well intermixing experienced by the second MQW layer that is larger than the first amount of quantum well intermixing experienced by the first MQW layer.

12. The array of claim 11 , where the first patternable layer spatially controls the first concentration of point defects and a blue shift of the first wavelength shift, and the second patternable layer spatially controls the second concentration of point defects and a blue shift of the second wavelength shift.

13. The array of claim 1 , wherein the first patternable layer and the second patternable layer are patterned using a linewidth pattern, wherein linewidths within the linewidth pattern are in the range 1 μm to 200 μm.

14. A method of manufacturing an array of monolithic wavelength division multiplexed (WDM) vertical cavity surface emitting lasers (VCSELs) with spatially varying gain peak and Fabry Perot wavelength, the method including:
growing a half cavity VCSEL epitaxial wafer forming multiple layers comprising a multiple quantum well (MQW) layer;
performing selective quantum well intermixing, wherein performing selective quantum well intermixing comprises:
patterning a first patternable layer that is patterned to cover a first area on a sacrificial layer above the multiple MQW layer, and
forming a first VCSEL of the array with a first amount of quantum well intermixing causing a first amount of lasing wavelength shift,
patterning a second patternable layer that is patterned differently from the first patternable layer to cover a second area on the sacrificial layer above the multiple MQW layer, and
forming and a second VCSEL of the array with a second amount of quantum well intermixing causing a second amount of lasing wavelength shift, wherein the selective quantum well intermixing causes a first MQW of the multiple MQW layer and second MQW of the multiple MQW layer to experience a different amount of quantum well intermixing induced by a correspondingly first concentration of point defects selectively created above the first MQW via the first patternable layer and a second concentration of point defects selectively created above the second MQW via the second patternable layer;

forming a first top mirror and a second top mirror; and
fabricating a first VCSEL and a second VCSEL, wherein the first and the second VCSELs are fabricated to emit a different wavelength of light due to the selective

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Mathai Sagi
• Tan Michael Renne Ty

Classifications

• H10H20/8142

  forming resonant cavity structures · CPC title

• H10H20/042

  Superluminescent diodes · CPC title

• H10H29/142 Primary

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H01S5/18311

  using selective oxidation · CPC title

• H01S5/18358

  containing spacer layers to adjust the phase of the light wave in the cavity · CPC title