Rinse agent composition for silicon wafers

Patent metadata

Field	Value
Publication number	US-10865368-B2
Application number	US-201716471849-A
Country	US
Kind code	B2
Filing date	Oct 26, 2017
Priority date	Dec 22, 2016
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

The rinsing composition for a silicon wafer of the present invention contains: a water-soluble polymer A containing a constitutional unit A having a betaine structure; and an aqueous medium. The water-soluble polymer A preferably contains a constitutional unit expressed by Formula (1) below. The water-soluble polymer preferably further contains a constitutional unit B expressed by Formula (2) below. The weight average molecular weight of the water-soluble polymer A is preferably 1,000 or more and preferably 3,000,000 or less. The rinsing composition for a silicon wafer of the present invention contains a pH regulator as needed.

First claim

The invention claimed is:

1. A rinsing composition for a silicon wafer, comprising:
a water-soluble polymer A containing a constitutional unit A having a betaine structure; and
an aqueous medium.

2. The rinsing composition for a silicon wafer according to claim 1 , wherein the constitutional unit A having a betaine structure in the water-soluble polymer A comprises a constitutional unit expressed by Formula (1) below:

where
R 1 to R 3 are the same or different and represent a hydrogen atom, a methyl group or an ethyl group,
R 4 is an alkylene group with 1 to 4 carbon atoms or —Y 1 -OPO 3 − —Y 2 —,
Y 1 and Y 2 are the same or different and represent an alkylene group with 1 to 4 carbon atoms,
R 5 and R 6 are the same or different and represent a hydrocarbon group with 1 to 4 carbon atoms,
X 1 is O or NR 7 ,
R 7 is a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms,
X 2 is a hydrocarbon group with 1 to 4 carbon atoms, —R 17 SO 3 − or —R 18 COO − ,
R 17 and R 18 are the same or different and represent an alkylene group with 1 to 4 carbon atoms, and
when R 4 is an alkylene group with 1 to 4 carbon atom, X 2 is —R 17 SO 3 − or —R 18 COO − , and when R 4 is —Y 1 —OPO 3 − —Y 2 —, X 2 is a hydrocarbon group with 1 to 4 carbon atoms.

3. The rinsing composition for a silicon wafer according to claim 2 , wherein the water-soluble polymer A further contains a constitutional unit B expressed by Formula (2) below:

where
R 8 to R 10 are the same or different and represent a hydrogen atom, a methyl group or an ethyl group,
X 3 is O or NR 19 ,
R 19 is a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms,
R 11 is an alkylene group with 1 to 22 carbon atoms (a hydrogen atom of the alkylene group may be substituted with a hydroxyl group) or -(AO) m - (where AO represents an alkyleneoxy group with 2 to 4 carbon atoms, and m represents an average number of added moles of 1 to 150),
X 4 is a hydrogen atom, a hydrocarbon group with 1 to 4 carbon atoms (a hydrogen atom of the hydrocarbon group may be substituted with a hydroxyl group), a hydroxyl group, N + R 12 R 13 R 14 or NR 15 R 16 , and
R 12 to R 16 are the same or different and represent a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms.

4. The rinsing composition for a silicon wafer according to claim 1 , wherein a weight average molecular weight of the water-soluble polymer A is 1,000 or more and 3,000,000 or less.

5. A method for rinsing a silicon wafer, comprising a step of rinsing a polished silicon wafer using the rinsing composition for a silicon wafer according to claim 1 .

6. A method for producing a semiconductor substrate, comprising a step of rinsing a polished silicon wafer using the rinsing composition for a silicon wafer according to claim 1 .

Assignees

• Kao Corp

Inventors

• Uchida Yohei

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C11D17/08 Primary

  Liquid soap, {e.g. for dispensers}; capsuled · CPC title

• C11D7/32

  containing nitrogen · CPC title

• C11D3/3703 Primary

  Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds · CPC title

• C11D3/0036

  Soil deposition preventing compositions; Antiredeposition agents · CPC title