Process for preparing a body having an osseointegrative topography formed on its surface

US10864062B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10864062-B2
Application numberUS-201715730253-A
CountryUS
Kind codeB2
Filing dateOct 11, 2017
Priority dateOct 13, 2016
Publication dateDec 15, 2020
Grant dateDec 15, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A process for preparing a body having an osseointegrative topography formed on its surface. The process includes the steps of providing a primary body made of a titanium-zirconium alloy containing 13 to 17 wt-% of zirconium, sandblasting the primary body, and etching the sandblasted primary body with an etching solution including hydrochloric acid, sulfuric acid and water at a temperature of above 80° C. to obtain the body, said etching being performed for a duration of 350 seconds at least.

First claim

Opening claim text (preview).

The invention claimed is: 1. A process for preparing a body having an osseointegrative topography formed on its surface, the process comprising: a) providing a primary body made of a titanium-zirconium alloy containing 13 to 17 wt-% of zirconium, b) sandblasting the primary body, and c) etching the sandblasted primary body with an etching solution comprising hydrochloric acid, sulfuric acid and water at a temperature of above 80° C. for a duration in a range of from 350 to 540 seconds to obtain the body. 2. The process according to claim 1 , wherein the etching is performed for a duration in a range of from 360 to 480 seconds. 3. The process according to claim 1 , wherein at least in a region directly adjacent to the surface, the alloy is essentially in the alpha-phase. 4. The process according to claim 1 , wherein in step b) Al 2 O 3 particles having an average particle size in a range from 0.1 mm to 0.6 mm are used as sandblasting material. 5. The process according to claim 1 , wherein the topography is defined by at least one of the following parameters: i) an arithmetic mean deviation of the surface (S a ) in three dimensions in a range of from 0.1 μm to 2.0 μm; ii) a maximum peak to valley height of the profile (S r ) in three dimensions in a range of from 1.0 μm to 20.0 μm; iii) a skewness of the profile (S sk ) in three dimensions in a range of from −0.6 to 0.6; and iv) a developed surface area (Sdr) in a range of from 15% to 25%. 6. The process according to claim 1 , wherein an amount of zirconium contained in the alloy is in a range of from 13 to 15 wt-%. 7. The process according to claim 1 , wherein the alloy contains iron in an amount higher than 0.001 wt-%. 8. The process according to claim 1 , wherein the alloy contains an amount of iron less than 0.05 wt-%. 9. The process according to claim 1 , wherein the alloy contains less than 0.1 wt.-% hafnium. 10. The process according to claim 1 , wherein after step b) and prior to step c) the sandblasted primary body is treated with a pickling solution comprising hydrofluoric acid and nitric acid, whereby a native oxide layer formed on the titanium-zirconium alloy is at least partially removed. 11. The process according to claim 1 , wherein the temperature of the etching solution during the entire etching is higher than 80° C. 12. The process according to claim 1 , wherein the sandblasted primary body is pre-heated to a temperature above room temperature immediately prior to step c). 13. The process according to claim 1 , wherein the etching is performed for a duration in a range of from 360 seconds to 420 seconds. 14. The process according to claim 1 , wherein in step b) Al 2 O 3 particles having an average particle size in a range of from 0.15 mm to 0.5 mm are used as sandblasting material. 15. The process according to claim 1 , wherein in step b) Al 2 O 3 particles having an average particle size in a range of from 0.2 mm to 0.4 mm are used as sandblasting material. 16. The process according to claim 1 , wherein the topography is defined by at least one of the following parameters: i) an arithmetic mean deviation of the surface (S a ) in three dimensions in a range of from 0.4 μm to 1.8 μm; ii) a maximum peak to valley height of the profile (S r ) in three dimensions in a range of from 3.0 μm to 18.0 μm; and iii) a skewness of the profile (S sk ) in three dimensions in a range of from −0.4 to 0.6. 17. The process according to claim 1 , wherein the alloy contains iron in an amount higher than 0.005 wt-%.

Assignees

Inventors

Classifications

  • C23F1/26Primary

    for etching refractory metals · CPC title

  • Titanium or titanium alloys · CPC title

  • Modification of implant surfaces in order to improve biocompatibility, cell growth, fixation of biomolecules, e.g. plasma treatment · CPC title

  • A61C8/0012Primary

    characterised by the material or composition, e.g. ceramics, surface layer, metal alloy (use of specific materials A61K6/00) · CPC title

  • Connecting devices for joining an upper structure with an implant member, e.g. spacers · CPC title

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What does patent US10864062B2 cover?
A process for preparing a body having an osseointegrative topography formed on its surface. The process includes the steps of providing a primary body made of a titanium-zirconium alloy containing 13 to 17 wt-% of zirconium, sandblasting the primary body, and etching the sandblasted primary body with an etching solution including hydrochloric acid, sulfuric acid and water at a temperature of ab…
Who is the assignee on this patent?
Straumann Holding Ag
What technology area does this patent fall under?
Primary CPC classification C23F1/26. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 15 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).